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Mg surface treatment for optimizing contact and bulk properties of p-type GaN grown by ammonia-molecular-beam epitaxyTANG, H; BARDWELL, J. A; WEBB, J. B et al.Proceedings - Electrochemical Society. 2003, pp 201-211, issn 0161-6374, isbn 1-56677-391-1, 11 p.Conference Paper

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Anodic film growth on InP in sodium tungstatePAKES, A; SKELDON, P; THOMPSON, G. E et al.Corrosion science. 2002, Vol 44, Num 10, pp 2161-2170, issn 0010-938XArticle

Thermal oxidation of III-V materials and heterostructuresHUSSEY, R. J; DRIAD, R; SPROULE, G. I et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 10, pp G581-G584, issn 0013-4651Article

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A simple wet etch for GaNBARDWELL, J. A; FOULDS, I. G; WEBB, J. B et al.Journal of electronic materials. 1999, Vol 28, Num 10, pp L24-L26, issn 0361-5235Article

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Anodic oxidation of gallium nitridePAKES, A; SKELDON, P; THOMPSON, G. E et al.Journal of materials science. 2003, Vol 38, Num 2, pp 343-349, issn 0022-2461, 7 p.Article

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