Measured capacitance coefficients of multiconductor microstrip lines with small dimensionsMOU-SHIUNG LIN.IEEE transactions on components, hybrids, and manufacturing technology. 1990, Vol 13, Num 4, pp 1050-1054, issn 0148-6411Article

A better understanding of the channel mobility of Si MOSFET's based on the physics of quantized subbandsMOU-SHIUNG LIN.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2406-2411, issn 0018-9383Article

INTERFACE ENERGETICS FOR N-TYPE SEMICONDUCTING STRONTIUM TITANATE AND TITANIUM DIOXIDE CONTACTING LIQUID ELECTROLYTE SOLUTIONS AND COMPETITIVE PHOTOANODIC DECOMPOSITION IN NON-AQUEOUS SOLUTIONSMOU SHIUNG LIN; HUNG N; WRIGHTON MS et al.1982; J. ELECTROANAL. CHEM. INTERFACIAL ELECTROCHEM.; ISSN 0022-0728; CHE; DA. 1982; VOL. 135; NO 1; PP. 121-143; BIBL. 24 REF.Article

Measurements and modeling of the harmonic distortion in InGaAsP distributed feedback lasersMOU-SHIUNG LIN; WANG, S.-Y. J; DUTTA, N. K et al.IEEE journal of quantum electronics. 1990, Vol 26, Num 6, pp 998-1004, issn 0018-9197Article

PHOTOELECTROCHEMICAL CELLS BASED ON AMORPHOUS HYDROGENATED SILICON THIN FILM ELECTRODES AND THE BEHAVIOR OF PHOTOCONDUCTOR ELECTRODE MATERIALSCALABRESE GS; MOU SHIUNG LIN; DRESNER J et al.1982; J. AM. CHEM. SOC.; ISSN 0002-7863; USA; DA. 1982; VOL. 104; NO 9; PP. 2412-2417; BIBL. 17 REF.Article

Temperature dependence of polarization characteristics in buried facet semiconductor laser amplifiersMOU-SHIUNG LIN; PICCIRILLI, A. B; YIHJYE TWU et al.IEEE journal of quantum electronics. 1990, Vol 26, Num 10, pp 1772-1778, issn 0018-9197, 7 p.Article

Investigation of a high quality and ultraviolet-light transparent plasma-enhanced chemical vapor deposition silicon nitride film for non-volatile memory applicationCHIN-KUN WANG; TSER-LIANG YING; CHIH-SHIH WEI et al.Japanese journal of applied physics. 1995, Vol 34, Num 9A, pp 4736-4740, issn 0021-4922, 1Article

Intermetal dielectric-induced N-field device failure in double-level-metal CMOS processKUO, H. H; LIN, K. M; LIU, C. M et al.IEEE electron device letters. 1992, Vol 13, Num 8, pp 405-407, issn 0741-3106Article

A new approach to modeling the substrate current of pre-stressed and post-stressed MOSFET'sJIUUN-JER YANG; SHAO-SHIUN CHUNG, S; PENG-CHENG CHOU et al.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 6, pp 1113-1119, issn 0018-9383Article

An efficient preclean of aluminized silicon substrate for chemical vapor deposition of submicron tungsten plugsWEN-KUAN YEH; MING-HSING TSAI; SHENG-HSIUNG CHEN et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 10, pp 3584-3588, issn 0013-4651Article

Selective tungsten CVD on submicron contact holeWEN-KUAN YEH; MAO-CHIEH CHEN; PEI-JAN WANG et al.Thin solid films. 1995, Vol 270, Num 1-2, pp 462-466, issn 0040-6090Conference Paper

Anomalous current-voltage characteristics and threshold voltage shift in implanted-polysilicon-gated complementary metal-oxide-semiconductor field-effect transistors with/without titanium-polycide technologyCHII-WEN CHEN; YEAN-KUEN FANG; GUN-YUAN LEE et al.Japanese journal of applied physics. 1995, Vol 34, Num 8A, pp L978-L980, issn 0021-4922, 2Article

Thermal ability of AlSiCu/W/n⁺p diodes with and without TiN barrier layerWEN-KUAN YEH; MAO-CHIEH CHEN; PEI-JAN WANG et al.Thin solid films. 1995, Vol 270, Num 1-2, pp 526-530, issn 0040-6090Conference Paper

Field inversion generated in the CMOS double-metal process due to PETEOS and SOG interactionsSHUN-LIANG HSU; LU-MIN LIU; CHUNG-HSIN FANG et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 1, pp 49-53, issn 0018-9383Article