au.\*:("MULLIN, J. Brian")
Results 1 to 25 of 115
Selection :
Mercury cadmium telluride and related materials. II: Epitaxial growth and substratesMULLIN, J. Brian.Progress in crystal growth and characterization of materials. 1994, Vol 29, Num 1-4, issn 0960-8974, 381 p.Serial Issue
Te-rich liquid-phase epitaxy of Hg1-xCdxTePELLICIARI, B.Progress in crystal growth and characterization of materials. 1994, Vol 29, Num 1-4, pp 1-39, issn 0960-8974Article
Fundamental studies on Bridgman growth of CdTeRUDOLPH, P.Progress in crystal growth and characterization of materials. 1994, Vol 29, Num 1-4, pp 275-381, issn 0960-8974Article
ICMOVPE-XI: Proceedings of the Eleventh International Conference on Metalorganic Vapor Phase Epitaxy, Berlin, Germany, 3-7 June 2002KROST, Alois; MULLIN, J. Brian; WEYERS, Markus et al.Journal of crystal growth. 2003, Vol 248, issn 0022-0248, 612 p.Conference Proceedings
Molecular beam epitaxy of Hg1-xCdxTe : growth and characterizationFAURIE, J.-P.Progress in crystal growth and characterization of materials. 1994, Vol 29, Num 1-4, pp 85-159, issn 0960-8974Article
Developments in the bulk growth of Cd1-xZnxTe for substratesSEN, S; STANNARD, J. E.Progress in crystal growth and characterization of materials. 1994, Vol 29, Num 1-4, pp 253-273, issn 0960-8974Article
Oxygen doping of AlGaAs in MOVPE using triethoxyarsineFUJITA, Yasuhisa.Journal of crystal growth. 2003, Vol 248, pp 144-148, issn 0022-0248, 5 p.Conference Paper
Metalorganic vapour phase epitaxy of mercury cadmium tellurideMULLIN, J. B; IRVINE, S. J. C.Progress in crystal growth and characterization of materials. 1994, Vol 29, Num 1-4, pp 217-252, issn 0960-8974Article
Growth mode control of ZnO toward nanorod structures or high-quality layered structures by metal-organic vapor phase epitaxyOGATA, K; MAEJIMA, K; FUJITA, Sz et al.Journal of crystal growth. 2003, Vol 248, pp 25-30, issn 0022-0248, 6 p.Conference Paper
MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe:P substratesLOVERGINE, N; TRAVERSA, M; PRETE, P et al.Journal of crystal growth. 2003, Vol 248, pp 37-42, issn 0022-0248, 6 p.Conference Paper
Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sourcesNEUMANN, S; PROST, W; TEGUDE, F.-J et al.Journal of crystal growth. 2003, Vol 248, pp 130-133, issn 0022-0248, 4 p.Conference Paper
High-quality, Cr-doped InGaAs/InP(0 0 1) MQWs grown by tert-butylarsine in a MOVPE apparatusCARTA, G; D'ANDREA, A; FERNANDEZ-ALONSO, F et al.Journal of crystal growth. 2003, Vol 248, pp 149-152, issn 0022-0248, 4 p.Conference Paper
MOVPE growth of InAlAs using tbas and DitBuSi for HEMT applicationsKEIPER, D; VELLING, P; BRENNEMANN, A et al.Journal of crystal growth. 2003, Vol 248, pp 153-157, issn 0022-0248, 5 p.Conference Paper
Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactorsBERGUNDE, T; HENNINGER, B; LÜNENBÜRGER, M et al.Journal of crystal growth. 2003, Vol 248, pp 235-239, issn 0022-0248, 5 p.Conference Paper
Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPENEUMANN, S; BAKIN, A; VELLING, P et al.Journal of crystal growth. 2003, Vol 248, pp 380-383, issn 0022-0248, 4 p.Conference Paper
Nitrogen incorporation in (GaIn)(NAs) for 1.3 μm VCSEL grown with MOVPERAMAKRISHNAN, A; STEINLE, G; SUPPER, D et al.Journal of crystal growth. 2003, Vol 248, pp 457-462, issn 0022-0248, 6 p.Conference Paper
Current-confining structure of InGaN hexagonal microfacet lasers by selective incorporation of Mg during selective-area MOVPEAKASAKA, Tetsuya; ANDO, Seigo; NISHIDA, Toshio et al.Journal of crystal growth. 2003, Vol 248, pp 537-541, issn 0022-0248, 5 p.Conference Paper
Electrical microcharacterization of dislocation-related charges in GaN-based single layers by scanning probe microscopy techniquesKRTSCHIL, A; DADGAR, A; KROST, A et al.Journal of crystal growth. 2003, Vol 248, pp 542-547, issn 0022-0248, 6 p.Conference Paper
Properties of (In, Ga)(As, P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditionsKNAUER, A; KRISPIN, P; BALAKRISHNAN, V. R et al.Journal of crystal growth. 2003, Vol 248, pp 364-368, issn 0022-0248, 5 p.Conference Paper
RDS characterization of GaAsSb and GaSb grown by MOVPEPITTS, O. J; WATKINS, S. P; WANG, C. X et al.Journal of crystal growth. 2003, Vol 248, pp 249-253, issn 0022-0248, 5 p.Conference Paper
Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactionsBORGSTROM, M; BRYLLERT, T; SASS, T et al.Journal of crystal growth. 2003, Vol 248, pp 310-316, issn 0022-0248, 7 p.Conference Paper
Surface quality of InP etched with tertiarybutylchloride in an MOVPE reactorFRANKE, D; SABELFELD, N; EBERT, W et al.Journal of crystal growth. 2003, Vol 248, pp 421-425, issn 0022-0248, 5 p.Conference Paper
Wavelength extension of GaInAs/GaIn(N)As quantum dot structures grown on GaAsHAKKARAINEN, T; TOIVONEN, J; SOPANEN, M et al.Journal of crystal growth. 2003, Vol 248, pp 339-342, issn 0022-0248, 4 p.Conference Paper
Hg-rich liquid-phase epitaxy of Hg1-xCdxTeKALISHER, M. H; HERNING, P. E; TUNG, T et al.Progress in crystal growth and characterization of materials. 1994, Vol 29, Num 1-4, pp 41-83, issn 0960-8974Article
Advances in the modeling of MOVPE processesKARPOV, S. Yu.Journal of crystal growth. 2003, Vol 248, pp 1-7, issn 0022-0248, 7 p.Conference Paper
