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International workshop on th measurement and characterization of ultra-shallow doping profiles in semiconductorsOSBURN, C. M; MCGUIRE, G. E.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 249-286, issn 0734-211X, 264 p.Conference Proceedings

A new spreading resistance correction scheme combining variable radius and barrier resistance with epilayer matchingCLARYSSE, T; VANDERVORST, W.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 432-437, issn 0734-211XConference Paper

Cascade mixing limitations in sputter profilingHOFMANN, S.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 316-322, issn 0734-211XConference Paper

Chemical vapor deposition of amorphous hydrogenated silicon : chemistry-structure-performance relationships : Fourth topical conference on microphysics of surfaces : beam-induced processes, 11-13 Febrary 1991, Santa Fe, New Mexico, USAHESS, P.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 239-247, issn 0734-211XConference Paper

Dopant profile extraction from spreading resistance measurementsMATHUR, R.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 421-425, issn 0734-211XConference Paper

Incremental sheet resistance and spreading resistance : a comparisonQUEIROLO, G; POLIGNANO, M. L.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 408-412, issn 0734-211XConference Paper

On the determination of dopant/carrier distributionsVANDERVORST, W; CLARYSSE, T.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 302-315, issn 0734-211XConference Paper

Poisson-based analysis of spreading resistance profilesMAZUR, R. G.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 397-407, issn 0734-211XConference Paper

Spreading resistance : a quantitative tool for process control and developmentPAWLIK, M.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 388-396, issn 0734-211XConference Paper

A contact model for poisson-base spreading resistance correction schemes incorporating Schottky barrier and pressure effectsCLARYSS, T; VANDERVORST, W.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 413-420, issn 0734-211XConference Paper

Filling of contacts and interconnects with Cu under XeCl excimer laser irradiationSHI-QING WANG; ONG, E.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 160-165, issn 0734-211XConference Paper

Two-dimensional delineation of shallow junctions in silicon by selective etching of transmission electron microscopy cross sectionsCERVA, H.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 491-495, issn 0734-211XConference Paper

Secondary ion mass spectrometry analysis strategy for shallow junctions on test and product silicon wafersSTEVIE, F. A.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 323-328, issn 0734-211XConference Paper

Practival implementation of metal oxide semiconductor capacitor majority carrier corrected dopant profilingANDERS, B.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 474-479, issn 0734-211XConference Paper

A poisson solver for spreading resistance analysisDICKEY, D. H.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 438-441, issn 0734-211XConference Paper

Continuous wave laser induced chemical reactions with integraded circuits : Fourth topical conference on microphysics of surfaces : beam-induced processes, 11-13 Febrary 1991, Santa Fe, New Mexico, USAAUVERT, G.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 248-255, issn 0734-211XConference Paper

Dissociative attachment and surface reactions induces by low-energy electrons : Fourth topical conference on microphysics of surfaces : beam-induced processes, 11-13 Febrary 1991, Santa Fe, New Mexico, USASANCHE, L.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 196-200, issn 0734-211XConference Paper

Low-energy etching of GaAs using a single-grid ion beamUENISHI, Y; YANAGISAWA, K.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 67-70, issn 0734-211XConference Paper

Methods for the measurement of two-dimensional doping profilesRAVI SUBRAHMANYAN.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 358-368, issn 0734-211XConference Paper

Nanolithography and its prospects as a manufacturing technology : Fourth topical conference on microphysics of surfaces : beam-induced processes, 11-13 Febrary 1991, Santa Fe, New Mexico, USAPEASE, R. F. W.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 278-285, issn 0734-211XConference Paper

Properties of Cu films under XeCl excimer laser irradiationSHI-QING WANG; ONG, E.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 149-159, issn 0734-211XConference Paper

Qualification and application of profiling data for model development and characterizationSHELDON WU; LING-CHU CHIEN.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 348-352, issn 0734-211XConference Paper