Thermal Conductivity Reduction in Si/Ge Core/Shell NanowiresCRISMARI, Dmitrii V; NIKA, Denis L.Journal of nanoelectronics and optoelectronics. 2012, Vol 7, Num 7, pp 701-705, issn 1555-130X, 5 p.Article

A Special issue on Physical Properties and Applications of NanostructuresNIKA, Denis L; POKATILOV, Evghenii P.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, issn 1555-130X, 155 p.Serial Issue

Two-dimensional phonon transport in grapheneNIKA, Denis L; BALANDIN, Alexander A.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 23, issn 0953-8984, 233203.1-233203.18Article

Phonons and Phonon Thermal Conductivity in Silicon NanolayersCOCEMASOV, Alexandr I; NIKA, Denis L.Journal of nanoelectronics and optoelectronics. 2012, Vol 7, Num 4, pp 370-375, issn 1555-130X, 6 p.Article

Anomalous Behavior of Trihomonuclear Magnetic Clusters Due to Their Four-Color SymmetryGERU, Ion I.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 381-392, issn 1555-130X, 12 p.Article

Anomalous Size Dependence of the Thermal Conductivity of Graphene RibbonsNIKA, Denis L; ASKEROV, Artur S; BALANDIN, Alexander A et al.Nano letters (Print). 2012, Vol 12, Num 6, pp 3238-3244, issn 1530-6984, 7 p.Article

Theoretical description of thermal transport in graphene: The issues of phonon cut-off frequencies and polarization branchesNIKA, Denis L; POKATILOV, Evghenii P; BALANDIN, Alexander A et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 11, pp 2609-2614, issn 0370-1972, 6 p.Article

Infrared Absorption by Free Carriers in Quasi-One-Dimensional Organic Crystals of Tetrathiotetracene-IodideCASIAN, Anatolie; DUSCIAC, Viorel; NICIC, Veaceslav et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 427-432, issn 1555-130X, 6 p.Article

Lattice Thermal Conductivity of Ultra-Thin Freestanding Layers: Face-Centered Cubic Cell Model versus Continuum ApproachNIKA, Denis L; ZINCENCO, Nadejda D; POKATILOV, Evghenii P et al.Journal of nanoelectronics and optoelectronics. 2009, Vol 4, Num 1, pp 170-173, issn 1555-130X, 4 p.Article

Coherent Dynamics of Bose Condensed Atoms in a Double-Well TrapKHADZHI, P. I; VASILIEVA, O. V.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 433-451, issn 1555-130X, 19 p.Article

Conductivity in In₂O₃ Nanoscale Film Under UV Irradiation and Gas Exposure ConditionsBRINZARI, V; IVANOV, M; DMITRIEV, S et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 495-501, issn 1555-130X, 7 p.Article

Electric Current and Heat Propagation in Graphene RibbonsSHAO, Qinghui; SUBRINA, Samia; NIKA, Denis L et al.Journal of nanoelectronics and optoelectronics. 2009, Vol 4, Num 3, pp 291-295, issn 1555-130X, 5 p.Article

Nanodimensional Chalcogenide Film-Metal Structure: Numerical Modeling of the Gas Sensitive PropertiesDMITRIEV, Serghei V; NIKA, Denis L; POKATILOV, Evghenii P et al.Journal of nanoelectronics and optoelectronics. 2009, Vol 4, Num 1, pp 165-169, issn 1555-130X, 5 p.Article

Influence of In2O3 Nanocrystals Size on the Sensitivity to NO2MARTYSHOV, M. N; FORSH, E. A; MARIKUTSA, A. V et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 452-455, issn 1555-130X, 4 p.Article

Chemical Vapor Deposition of Multilayer Graphene and Its Characterization with the Auger and Raman SpectroscopyBULATOVA, Alsu N; ZHIZHIN, Evgeny; JIE YU et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 525-528, issn 1555-130X, 4 p.Article

Structural and Optoelectronic Properties of Tin Oxide Nanocrystals Prepared by Wet Chemistry MethodsZHURBINA, I. A; TIMOSHENKO, V. Yu; RUMYANTSEVA, M. N et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 514-518, issn 1555-130X, 5 p.Article

Cyclotron-Phonon Resonance in Quantum Well StructuresBERIL, S. I; POKATILOV, E. P; STARCHUK, A. S et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 456-462, issn 1555-130X, 7 p.Article

Photoluminescence Properties of Er-Implanted SiO/SiO2 Multilayered Structures with Amorphous or Crystalline Si NanoclustersZHIGUNOV, D. M; DYAKOV, S. A; TIMOSHENKO, V. Yu et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 491-494, issn 1555-130X, 4 p.Article

Photoelectric Properties of Heterostructures with Oxide Films Containing Si(Ge) Quantum Dots Formed by Pulsed Laser DepositionSACHENKO, A. V; KORBUTYAK, D. V; KRYUCHENKO, Yu. V et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 420-426, issn 1555-130X, 7 p.Article

Quasi-Ordered Networks of Metal Nanotubes Embedded in Semiconductor Matrices for Photonic ApplicationsTIGINYANU, I. M; URSAKI, V. V; MONAICO, E et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 463-472, issn 1555-130X, 10 p.Article

Photoluminescence and Raman Study of Well-Aligned ZnO Nanorods on p-Si SubstrateURSAKI, V. V; LUPAN, O; TIGINYANU, I. M et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 473-477, issn 1555-130X, 5 p.Article

Optical Properties of III-VI Lamellar Semiconductors Doped with Cu and Cd and of Related III-VI/Native Oxide StructuresEVTODIEV, Silvia; CARAMAN, Lulia; DMITROGLO, Liliana et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 502-513, issn 1555-130X, 12 p.Article

Exciton Condensation Under High Magnetic FieldMOSKALENKO, S. A; LIBERMAN, M. A; DUMANOV, E. V et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 393-419, issn 1555-130X, 27 p.Article

Infrared Spectroscopy of Semiconductor Structures Based on Alkyl-Substituted Lanthanide (III) Clam-Shell Mono-, Di-, and Di-Trisphthalocyanine ComplexesBELOGOROKHOV, I. A; TIKHONOV, E. V; DRONOV, M. A et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 478-483, issn 1555-130X, 6 p.Article

Synthesis and Physico-Chemical Properties of Mesoporous Carbon NanotubesGERU, Ion I; GUBCEAC, Ghennadii N; IGNAT, Maria I et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 4, pp 484-490, issn 1555-130X, 7 p.Article