Interface-supersaturation estimated from the shape of steps on the surface of InP MCE by LPENARITSUKA, Shigeya; NISHINAGA, Tatau.Journal of crystal growth. 2001, Vol 222, Num 1-2, pp 14-19, issn 0022-0248Article

Special Issue: Proceedings of the Third International Symposium on the Control of Semiconductor Interfaces, ISCSI-3, Karuizawa, Japan, October 25-29, 1999NISHINAGA, Tatau; NISHIOKA, Yasushiro; ITO, Hiroshi et al.Applied surface science. 2000, Vol 159-60, issn 0169-4332, 645 p.Conference Proceedings

Atomistic aspects of molecular beam epitaxyNISHINAGA, Tatau.Progress in crystal growth and characterization of materials. 2004, Vol 48-49, pp 104-122, issn 0960-8974, 19 p.Article

Effect of dislocation density on microchannel epitaxy of GaAs on GaAs/Si substrateCHANG, Yung-Sheng; NARITSUKA, Shegeya; NISHINAGA, Tatau et al.Journal of crystal growth. 2010, Vol 312, Num 5, pp 629-634, issn 0022-0248, 6 p.Article

Defect causing nonideality in nearly ideal Au/Si Schottky barrierMAEDA, K.Applied surface science. 2000, Vol 159-60, pp 154-160, issn 0169-4332Conference Paper

Monte Carlo simulation of growth of hard-sphere crystals on a square patternMORI, Atsushi.Journal of crystal growth. 2011, Vol 318, Num 1, pp 66-71, issn 0022-0248, 6 p.Conference Paper

Steady chirality conversion by grinding crystals—Supercritical and subcritical bifurcationsUWAHA, Makio.Journal of crystal growth. 2011, Vol 318, Num 1, pp 89-92, issn 0022-0248, 4 p.Conference Paper

First-principles structural determination of Si(001)-C₂H₂ chemisorbed surfaceTANIDA, Y; TSUKADA, M.Applied surface science. 2000, Vol 159-60, pp 19-24, issn 0169-4332Conference Paper

Nanometer-scale characterization of lateral p-n⁺ junction by scanning capacitance microscopeTOMIYE, H; YAO, T.Applied surface science. 2000, Vol 159-60, pp 210-219, issn 0169-4332Conference Paper

Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilaneYASUI, K; ASADA, K; AKAHANE, T et al.Applied surface science. 2000, Vol 159-60, pp 556-560, issn 0169-4332Conference Paper

Two-dimensional hydrogen distribution on solid surfaces studied by electron-stimulated desorption microscopy and Ni-silicides on H-terminated Si(100) surfacesUEDA, K; ISHIKAWA, K; YOSHIMURA, M et al.Applied surface science. 2000, Vol 159-60, pp 201-209, issn 0169-4332Conference Paper

Dissolution kinetics at edge dislocation site of (1 1 1) surface of copper crystalsIMASHIMIZU, Y.Journal of crystal growth. 2011, Vol 318, Num 1, pp 125-130, issn 0022-0248, 6 p.Conference Paper

Raman scattering analysis of InGaAs/AlAsSb short-period superlatticesGEORGIEV, N; MOZUME, T.Applied surface science. 2000, Vol 159-60, pp 520-527, issn 0169-4332Conference Paper

Silicon microphotonicsKIMERLING, L. C.Applied surface science. 2000, Vol 159-60, pp 8-13, issn 0169-4332Conference Paper

The 16th International Conference on Crystal Growth (ICCG16)/The 14th International Conference on Vapor Growth and Epitaxy (ICVGE14), 8-13 August 2010, Beijing, ChinaCHEN, Chuangtian; KUECH, Thomas F; NISHINAGA, Tatau et al.Journal of crystal growth. 2011, Vol 318, Num 1, issn 0022-0248, 1203 p.Conference Proceedings

Recent developments in understanding of the metastable zone width of different solute―solvent systemsSANGWAL, K.Journal of crystal growth. 2011, Vol 318, Num 1, pp 103-109, issn 0022-0248, 7 p.Conference Paper

Microchannel epitaxy: an overviewNISHINAGA, Tatau.Journal of crystal growth. 2002, Vol 237-39, pp 1410-1417, issn 0022-0248, 2Conference Paper

Nano-interface engineering of Co/Ge/Si systems: metal incorporation into Ge quantum dots and SiO₂/Si structuresPRABHAKARAN, K; SUMITOMO, K; OGINO, T et al.Applied surface science. 2000, Vol 159-60, pp 492-497, issn 0169-4332Conference Paper

Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivationNEGORO, N; FUJIKURA, H; HASEGAWA, H et al.Applied surface science. 2000, Vol 159-60, pp 292-300, issn 0169-4332Conference Paper

Understanding of crystal growth mechanisms through experimental studies of semiconductor epitaxyNISHINAGA, Tatau.Journal of crystal growth. 2005, Vol 275, Num 1-2, pp 19-28, issn 0022-0248, 10 p.Conference Paper

Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor depositionKITAGAWA, T; KONDO, M; MATSUDA, A et al.Applied surface science. 2000, Vol 159-60, pp 30-34, issn 0169-4332Conference Paper

Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxyBACCHIN, G; UMENO, A; NISHINAGA, T et al.Applied surface science. 2000, Vol 159-60, pp 270-276, issn 0169-4332Conference Paper

Influence of incorporation of Na on p-type CuInS₂ thin filmsYAMAMOTO, T; FUKUZAKI, K; KOHIKI, S et al.Applied surface science. 2000, Vol 159-60, pp 345-349, issn 0169-4332Conference Paper

Molecular dynamics analysis of point defects in silicon near solid-liquid interfaceKAKIMOTO, K; UMEHARA, T; OZOE, H et al.Applied surface science. 2000, Vol 159-60, pp 387-391, issn 0169-4332Conference Paper

In-situ optical monitoring of surface morphology and stoichiometry during GaN metal organic vapor phase epitaxyKOBAYASHI, N; KOBAYASHI, Y.Applied surface science. 2000, Vol 159-60, pp 398-404, issn 0169-4332Conference Paper