Temperature dependence of silicon power MOSFETs switching parametersHABCHI, R; SALAME, C; NSOULI, B et al.Microelectronics international. 2006, Vol 23, Num 2, pp 21-23, issn 1356-5362, 3 p.Article

Secondary emission of negative ions and electrons resulting from electronic sputtering of cesium salts: differences between halides and oxygenated saltsALLALI, H; NSOULI, B; THOMAS, J.-P et al.International journal of mass spectrometry and ion processes. 1993, Vol 127, pp 111-121, issn 0168-1176Article

Effects of the polarity of high-electric field stressing on power VDMOSFETs parametersEL BITAR, R; SALLOUM, G; NSOULI, B et al.Microelectronics international. 2010, Vol 27, Num 1, pp 17-20, issn 1356-5362, 4 p.Article

THE DETERMINATION OF BACKGROUND LEVEL OF HEAVY METALS IN LEBANESE SOILS USING PARTICLE INDUCED X-RAY EMISSION TECHNIQUEYAZBECK, D; DARWISH, T; NSOULI, B et al.Annales de recherche scientifique. 2004, Num 5, pp 369-381, issn 1992-2191, 13 p.Article

VDMOSFET reliability dependence on the integrated drain-source junctionEL BITAR, R; HABCHI, R; SALAME, C et al.Microelectronics international. 2009, Vol 26, Num 1, pp 33-36, issn 1356-5362, 4 p.Article

Investigation of the radiological impact on the coastal environment surrounding a fertilizer plantEL SAMAD, O; AOUN, M; NSOULI, B et al.Journal of environmental radioactivity. 2014, Vol 133, pp 69-74, issn 0265-931X, 6 p.Conference Paper

Pulsed laser deposition of nanostructured dichromium trioxide thin filmsTABBAL, M; KAHWAJI, S; CHRISTIDIS, T. C et al.Thin solid films. 2006, Vol 515, Num 4, pp 1976-1984, issn 0040-6090, 9 p.Article

Determination of natural and artificial radioactivity in soil at North Lebanon provinceEL SAMAD, O; BAYDOUN, R; NSOULI, B et al.Journal of environmental radioactivity. 2013, Vol 125, pp 36-39, issn 0265-931X, 4 p.Conference Paper

Determination of Stoichiometry and Superconducting Properties of Tl-1234 and (Cu_0.25Tl_0.75)-1234 Phases Substituted by ErbiumMOHAMMED, N. H; ROUMIE, M; MOTAWEH, H. A et al.Journal of superconductivity and novel magnetism. 2010, Vol 23, Num 4, pp 465-474, issn 1557-1939, 10 p.Article

PIXE analysis of medieval silver coinsBEN ABDELOUAHED, H; GHARBI, F; ROUMIE, M et al.Materials characterization. 2010, Vol 61, Num 1, pp 59-64, issn 1044-5803, 6 p.Article

Gamma-ray-induced modifications of the chemical structure of an ion exchange resinDRAYE, M; NSOULI, B; ALLALI, H et al.Polymer degradation and stability. 1997, Vol 56, Num 2, pp 157-167, issn 0141-3910Article

Depth profiling and stoichiometry of constituents in platinum electroless contacts on CdTe(111) under different pH valuesROUMID, M; LMAI, F; AWADA, A et al.Thin solid films. 2007, Vol 515, Num 20-21, pp 7843-7846, issn 0040-6090, 4 p.Article

Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge-based meltsSOUEIDAN, M; FERRO, G; JACQUIER, C et al.Diamond and related materials. 2007, Vol 16, Num 1, pp 37-45, issn 0925-9635, 9 p.Article

Low-temperature homoepitaxial growth of α-SiC on on-axis (0001) substrate by vapor-liquid-solid mechanismSOUEIDAN, M; FERRO, G; NSOULI, B et al.Journal of crystal growth. 2006, Vol 293, Num 2, pp 433-437, issn 0022-0248, 5 p.Article

Comparison of secondary ion emission induced in silicon oxide by mev and kev ion bombardmentAllali, H; Nsouli, B; Thomas, J. P et al.1993, 14 p.Report

Secondary ion emission from ultra-thin oxide layers bombarded by energetic (MeV) heavy ions : depth of origin and layer homogeneityAllali, H; Cabaud, B; Fuchs, G et al.1993, 22 p.Report