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Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azideOBERMAN, D. B; LEE, H; GÖTZ, W. K et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 912-915, issn 0022-0248, 2Conference Paper

Reactive ion etching of Gallium nitride filmsLEE, H; OBERMAN, D. B; HARRIS, J. S et al.Journal of electronic materials. 1996, Vol 25, Num 5, pp 835-837, issn 0361-5235Article

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