Beyond the AlGaN/GaN HEMT: new concepts for high-speed transistorsPALACIOS, Tomas.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 6, pp 1145-1148, issn 1862-6300, 4 p.Conference Paper

High Breakdown (> 1500 V) AIGaN/GaN HEMTs by Substrate-Transfer TechnologyBIN LU; PALACIOS, Tomás.IEEE electron device letters. 2010, Vol 31, Num 9, pp 951-953, issn 0741-3106, 3 p.Article

Schottky-Drain Technology for AIGaN/GaN High-Electron Mobility TransistorsBIN LU; PINER, Edwin L; PALACIOS, Tomás et al.IEEE electron device letters. 2010, Vol 31, Num 4, pp 302-304, issn 0741-3106, 3 p.Article

Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode StructureMATIOLI, Elison; BIN LU; PALACIOS, Tomás et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 10, pp 3365-3370, issn 0018-9383, 6 p.Article

InAIN/GaN HEMTs With AlGaN Back BarriersLEE, Dong Seup; XIANG GAO; SHIPING GUO et al.IEEE electron device letters. 2011, Vol 32, Num 5, pp 617-619, issn 0741-3106, 3 p.Article

A model for the critical voltage for electrical degradation of GaN high electron mobility transistorsJOH, Jungwoo; FENG GAO; PALACIOS, Tomás et al.Microelectronics and reliability. 2010, Vol 50, Num 6, pp 767-773, issn 0026-2714, 7 p.Conference Paper

Graphene Frequency MultipliersHAN WANG; NEZICH, Daniel; JING KONG et al.IEEE electron device letters. 2009, Vol 30, Num 5, pp 547-549, issn 0741-3106, 3 p.Article

N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer TechnologyCHUNG, Jinwook W; PINER, Edwin L; PALACIOS, Tomas et al.IEEE electron device letters. 2009, Vol 30, Num 2, pp 113-116, issn 0741-3106, 4 p.Article

An Etch-Stop Barrier Structure for GaN High-Electron-Mobility TransistorsBIN LU; MIN SUN; PALACIOS, Tomas et al.IEEE electron device letters. 2013, Vol 34, Num 3, pp 369-371, issn 0741-3106, 3 p.Article

EMERGING GRAPHENE-BASED ELECTRONIC & PHOTONIC DEVICES, CIRCUITS, AND SYSTEMSTOWE, Elias; PALACIOS, Tomas; SUEMITSU, Maki et al.Proceedings of the IEEE. 2013, Vol 101, Num 7, issn 0018-9219, 288 p.Serial Issue

Graphene Transistors: Status, Prospects, and ProblemsSCHWIERZ, Frank.Proceedings of the IEEE. 2013, Vol 101, Num 7, pp 1567-1584, issn 0018-9219, 18 p.Article

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode TransistorBIN LU; OMAIR IRFAN SAADAT; PALACIOS, Tomas et al.IEEE electron device letters. 2010, Vol 31, Num 9, pp 990-992, issn 0741-3106, 3 p.Article

Tunneling Transistors Based on Graphene and 2-D CrystalsJENA, Debdeep.Proceedings of the IEEE. 2013, Vol 101, Num 7, pp 1585-1602, issn 0018-9219, 18 p.Article

AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free TechnologyLEE, Hyung-Seok; LEE, Dong Seup; PALACIOS, Tomas et al.IEEE electron device letters. 2011, Vol 32, Num 5, pp 623-625, issn 0741-3106, 3 p.Article

Tri-Gate Normally-Off GaN Power MISFETBIN LU; MATIOLI, Elison; PALACIOS, Tomas et al.IEEE electron device letters. 2012, Vol 33, Num 3, pp 360-362, issn 0741-3106, 3 p.Article

GaN-on-Si Vertical Schottky and p-n DiodesYUHAO ZHANG; MIN SUN; PIEDRA, Daniel et al.IEEE electron device letters. 2014, Vol 35, Num 6, pp 618-620, issn 0741-3106, 3 p.Article

Gate-First AIGaN/GaN HEMT Technology for High-Frequency ApplicationsSAADAT, Omair I; CHUNG, Jinwook W; PINER, Edwin L et al.IEEE electron device letters. 2009, Vol 30, Num 12, pp 1254-1256, issn 0741-3106, 3 p.Article

3000-V 4.3-mΩ · cm² InAlN/GaN MOSHEMTs With AlGaN Back BarrierLEE, Hyung-Seok; PIEDRA, Daniel; MIN SUN et al.IEEE electron device letters. 2012, Vol 33, Num 7, pp 982-984, issn 0741-3106, 3 p.Article

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTsCHUNG, Jinwook W; LEE, Jae-Kyu; PINER, Edwin L et al.IEEE electron device letters. 2009, Vol 30, Num 10, pp 1015-1017, issn 0741-3106, 3 p.Article

Graphene Nanoelectromechanical SystemsCHANGYAO CHEN; HONE, James.Proceedings of the IEEE. 2013, Vol 101, Num 7, pp 1766-1779, issn 0018-9219, 14 p.Article

Study of impact of access resistance on high-frequency performance of AlGaN/GaN HEMTs by measurements at low temperaturesNIDHI; PALACIOS, Tomas; CHAKRABORTY, Arpan et al.IEEE electron device letters. 2006, Vol 27, Num 11, pp 877-880, issn 0741-3106, 4 p.Article

Wafer-Level Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETsLEE, Hyung-Seok; RYU, Kevin; MIN SUN et al.IEEE electron device letters. 2012, Vol 33, Num 2, pp 200-202, issn 0741-3106, 3 p.Article

Graphene-Based Ambipolar RF MixersHAN WANG; HSU, Allen; WU, Justin et al.IEEE electron device letters. 2010, Vol 31, Num 9, pp 906-908, issn 0741-3106, 3 p.Article

Multiscale Modeling for Graphene-Based Nanoscale TransistorsFIORI, Gianluca; IANNACCONE, Giuseppe.Proceedings of the IEEE. 2013, Vol 101, Num 7, pp 1653-1669, issn 0018-9219, 17 p.Article

Voltage controlled SAW filters on 2DEG AlGaN/GaN heterostructuresGRAJAL, Jesus; CALLE, Femando; PEDROS, Jorge et al.IEEE MTT-S International Microwave Symposium. 2004, isbn 0-7803-8331-1, vol1, 387-390Conference Paper