Three-dimensional response and intensity of torsional vibration in a stepped shaftPAN, J. Q; PAN, J; MING, R. S et al.Journal of sound and vibration. 2000, Vol 236, Num 1, pp 115-128, issn 0022-460XArticle

High-power electroabsorption modulator for radio over fibre systemCHENG, Y. B; PAN, J. Q; CHEN, W. X et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 14, pp 4120-4122, issn 0022-3727, 3 p.Article

Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical propertiesLIANG, S; ZHU, H. L; PAN, J. Q et al.Journal of crystal growth. 2006, Vol 289, Num 2, pp 477-484, issn 0022-0248, 8 p.Article

Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generationZHAO, Q; PAN, J. Q; ZHANG, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 60200O.1-60200O.8, issn 0277-786X, isbn 0-8194-6051-6, 1VolConference Paper

5Gb/s optical logic AND operations using by monolithically integrated photodiode and electroabsorption modulatorZHANG, Y. X; ZHAO, L. J; NIU, B et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7717, issn 0277-786X, isbn 978-0-8194-8190-0 0-8194-8190-4, 1Vol, 77171B.1-77171B.6Conference Paper

1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugationFENG, W; PAN, J. Q; WANG, L et al.Semiconductor science and technology. 2007, Vol 22, Num 8, pp 859-862, issn 0268-1242, 4 p.Article

Monolithic integration of an InGaAsP-InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVDZHAO, Q; PAN, J. Q; ZHOU, F et al.Semiconductor science and technology. 2005, Vol 20, Num 6, pp 544-547, issn 0268-1242, 4 p.Article

High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVDZHAO, Q; PAN, J. Q; ZHANG, J et al.Optical materials (Amsterdam). 2006, Vol 28, Num 8-9, pp 1037-1040, issn 0925-3467, 4 p.Article

Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasersFENG, W; PAN, J. Q; ZHOU, F et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63210I.1-63210I.8, issn 0277-786X, isbn 0-8194-6400-7, 1VolConference Paper

Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generationZHAO, Q; PAN, J. Q; ZHANG, J et al.Semiconductor science and technology. 2005, Vol 20, Num 8, pp 882-885, issn 0268-1242, 4 p.Article

Photostabilizing effectiveness of new HALS produced by isocyanation of hindered piperidine derivativesLAU, W. W. Y; PAN, J.-Q.Polymer degradation and stability. 1998, Vol 60, Num 2-3, pp 459-464, issn 0141-3910Article

InP-based deep-ridge NPN transistor laserLIANG, S; KONG, D. H; ZHU, H. L et al.Optics letters. 2011, Vol 36, Num 16, pp 3206-3208, issn 0146-9592, 3 p.Article

Role of oxygen in structural properties of annealed CuAlO₂ filmsLAN, W; PAN, J. Q; ZHU, C. Q et al.Journal of crystal growth. 2011, Vol 314, Num 1, pp 370-373, issn 0022-0248, 4 p.Article

All Optical Clock Recovery for 40Gbs using an Amplified Feedback DFB LaserSUN, Y; PAN, J. Q; ZHAO, L. J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7631, issn 0277-786X, isbn 978-0-8194-8033-0 0-8194-8033-9, 1Vol, 76310E.1-76310E.7Conference Paper

Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPEFENG, W; PAN, J. Q; WANG, L. F et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 2, pp 361-365, issn 0022-3727, 5 p.Article

Preparation of Na_1+xFe₄P₁₂ whiskers by hydrothermal reduction alloying synthesis methodLIU, H; WANG, J. Y; HU, X. B et al.Chemistry of materials. 2001, Vol 13, Num 1, pp 151-154, issn 0897-4756Article

The stability and surface reactivity of gallium phosphide nanocrystalsCUI, D. L; PAN, J. Q; ZHANG, Z. C et al.Progress in crystal growth and characterization of materials. 2000, Vol 40, Num 1-4, pp 145-151, issn 0960-8974Conference Paper

Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substratesLIANG, S; ZHU, H. L; YE, X. L et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 5, issn 0022-3727, 055310.1-055310.5Article

AlGaInAs narrow stripe selective growth on substrates patterned with different mask designsFENG, W; PAN, J. Q; YANG, H et al.Journal of physics. D, Applied physics (Print). 2006, Vol 39, Num 11, pp 2330-2334, issn 0022-3727, 5 p.Article

MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmissionZHAO, Q; PAN, J. Q; ZHANG, J et al.Semiconductor science and technology. 2006, Vol 21, Num 6, pp 734-739, issn 0268-1242, 6 p.Article

Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmissionZHAO, Q; PAN, J. Q; ZHANG, J et al.Optics communications. 2006, Vol 260, Num 2, pp 666-669, issn 0030-4018, 4 p.Article

Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPEFENG, W; PAN, J. Q; ZHOU, F et al.Semiconductor science and technology. 2006, Vol 21, Num 7, pp 841-845, issn 0268-1242, 5 p.Article

High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVDZHAO, Q; PAN, J. Q; ZHANG, J et al.Journal of crystal growth. 2006, Vol 288, Num 1, pp 27-31, issn 0022-0248, 5 p.Conference Paper

Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVDLIANG, S; ZHU, H. L; PAN, J. Q et al.Journal of crystal growth. 2005, Vol 282, Num 3-4, pp 297-304, issn 0022-0248, 8 p.Article

Synthesis of new polymeric stabilizers for polymersPAN, J. Q; QUEK, P. W; LIU, N. C et al.Journal of applied polymer science. 2000, Vol 78, Num 2, pp 403-411, issn 0021-8995Article