CONTRIBUTION A L'ETUDE DE LA STEREOCHIMIE DE LA CYCLOADDITION DIPOLAIRE-1,3: REACTIONS D'ESTERS D'OXIMES AVEC QUELQUES DIPOLES 1,3 ET D'YLURES DE NITRILE AVEC LES OLEFINES ACTIVEESPERROCHEAU JACQUES.1979; ; FRA; DA. 1979; 187 P.; 30 CM; BIBL. DISSEM.; TH. 3E CYCLE: SYNTH. REACT. ESPECES MOL./RENNES 1/1979/544Thesis

Highly selective etching of deep silica components using electron cyclotron resonance plasmaFERSTL, Margit.Microelectronic engineering. 2002, Vol 61-62, pp 881-886, issn 0167-9317Conference Paper

PDMS-based microfluidic devices for biomedical applicationsFUJII, Teruo.Microelectronic engineering. 2002, Vol 61-62, pp 907-914, issn 0167-9317Conference Paper

Micro- and nano- engineering 2001, MNE: proceedings of the 27th international conference on micro- and nano-engineering, September 16-19, 2001, Grenoble, FranceJOUBERT, Olivier; PERROCHEAU, Jacques; TEDESCO, Serge et al.Microelectronic engineering. 2002, Vol 61-62, issn 0167-9317, 1123 p.Conference Proceedings

Advanced optical lithography development, from UV to EUVFAY, Bernard.Microelectronic engineering. 2002, Vol 61-62, pp 11-24, issn 0167-9317Conference Paper

Optical problems of wafer inspection with DUV microscopy for structures of about 0.1 μmHILD, Rosemarie.Microelectronic engineering. 2002, Vol 61-62, pp 1093-1100, issn 0167-9317Conference Paper

Nanostructuring of aluminum-coated scanning near-field optical microscope probes by direct, laser thermal oxidation in waterHAEFLIGER, D; STEMMER, A.Microelectronic engineering. 2002, Vol 61-62, pp 523-527, issn 0167-9317Conference Paper

Progress in 157-nm lithography development for 70-nm nodeITANI, Toshiro; WAKAMIYA, Wataru.Microelectronic engineering. 2002, Vol 61-62, pp 49-55, issn 0167-9317Conference Paper

Silicon nanofabrication by electron beam lithography and laser-assisted electrochemical size-reductionJUHASZ, Robert; LINNROS, Jan.Microelectronic engineering. 2002, Vol 61-62, pp 563-568, issn 0167-9317Conference Paper

Colourtone lithographyLEE, R. A.Microelectronic engineering. 2002, Vol 61-62, pp 105-111, issn 0167-9317Conference Paper

Electron-beam nanolithography and line-edge roughness of acid-breakable resin-based positive resistSAKAMIZU, Toshio; SHIRAISHI, Hiroshi.Microelectronic engineering. 2002, Vol 61-62, pp 763-770, issn 0167-9317Conference Paper

The effect of cross-coupling in a bidirectional electron pumpALTEBAEUMER, T; AHMED, H.Microelectronic engineering. 2002, Vol 61-62, pp 549-554, issn 0167-9317Conference Paper

Process integration of 20 nm electron beam lithography and nanopatterning for ultimate MOSFET device fabricationKRETZ, J; DREESKORNFELD, L.Microelectronic engineering. 2002, Vol 61-62, pp 607-612, issn 0167-9317Conference Paper

Maskless nanofabrication using the electrostatic attachment of gold particles to electrically patterned surfacesMESQUIDA, Patrick; STEMMER, Andreas.Microelectronic engineering. 2002, Vol 61-62, pp 671-674, issn 0167-9317Conference Paper

Application of floatable oxide (FOx-12) for nanometer magnetic particle fabricationJEDRASIK, P; HANSON, M.Microelectronic engineering. 2002, Vol 61-62, pp 811-817, issn 0167-9317Conference Paper

Automatic calibration of lithography simulation parameters using multiple data setsBYERS, Jeffrey; MACK, Chris; HUANG, Richard et al.Microelectronic engineering. 2002, Vol 61-62, pp 89-95, issn 0167-9317Conference Paper

Influence of implantation dose on the charge storage characteristics of MOS memory devices with low energy Si implanted gate oxidesKAPETANAKIS, E; NORMAND, P; TSOUKALAS, D et al.Microelectronic engineering. 2002, Vol 61-62, pp 505-510, issn 0167-9317Conference Paper

Non-destructive method for monitoring glass transitions in thin photoresist filmsRAPTIS, Ioannis; DIAKOUMAKOS, Constantinos D.Microelectronic engineering. 2002, Vol 61-62, pp 829-834, issn 0167-9317Conference Paper

Electrostatically driven microgripperVOLLAND, B. E; HEERLEIN, H; RANGELOW, I. W et al.Microelectronic engineering. 2002, Vol 61-62, pp 1015-1023, issn 0167-9317Conference Paper

Fabrication of the thin film slot antenna arrays for receiving 28 THz-CO₂ laser radiationYASUOKA, Yoshizumi; HASHIMOTO, Shoji; ABE, Yasuhiko et al.Microelectronic engineering. 2002, Vol 61-62, pp 1049-1054, issn 0167-9317Conference Paper

Silicon gate notching for patterning features with dimensions smaller than the resolution of the lithographyFOUCHER, J; CUNGE, G; VALLIER, L et al.Microelectronic engineering. 2002, Vol 61-62, pp 849-857, issn 0167-9317Conference Paper

Wet etching of linear Fresnel zone plates for hard X-raysDAVID, C; NÖHAMMER, B; ZIEGLER, E et al.Microelectronic engineering. 2002, Vol 61-62, pp 987-992, issn 0167-9317Conference Paper

Microarrays and microfluidic devices: miniaturized systems for biological analysisVINET, F; CHATON, P; FOUILLET, Y et al.Microelectronic engineering. 2002, Vol 61-62, pp 41-47, issn 0167-9317Conference Paper

Electrical and noise characterization of suspended silicon wiresMACUCCI, M; PELLEGRINI, B; PENNELLI, G et al.Microelectronic engineering. 2002, Vol 61-62, pp 701-705, issn 0167-9317Conference Paper

A new positive electron-beam resist material composed of catechol derivativesSAITO, Satoshi; KIHARA, Naoko; USHIROGOUCHI, Tohru et al.Microelectronic engineering. 2002, Vol 61-62, pp 777-781, issn 0167-9317Conference Paper