INFLUENCE DES CARACTERISTIQUES DES DETECTEURS IR SUR LEUR APPLICATION EN THERMOGRAPHIEPIOTROWSKI T.1975; ROZPR. ELEKTROTECH.; POLSKA; DA. 1975; VOL. 21; NO 2; PP. 391-403; ABS. ANGL. FR. ALLEM. RUSSE; BIBL. 18 REF.Article

CAMS AND SOLENOID VALVES PROGRAM TOOL CHANGERPIOTROWSKI T.1978; HYDRAUL. AND PNEUMAT.; USA; DA. 1978; VOL. 31; NO 11; PP. 60-63Article

PREPARATION OF LOW-PHOSPHORUS COAL FEED FOR COKE MANUFACTUREPIOTROWSKI T.1976; KOKS SMOLA GAZ; POLSKA; DA. 1976; VOL. 21; NO 1; PP. 5-8; ABS. RUSSE ANGL. FR. ALLEM.Article

METALLOGRAPHY OF THE PRECIOUS METALS.PIOTROWSKI T; ACCINNO DJ.1977; METALLOGRAPHY; U.S.A.; DA. 1977; VOL. 10; NO 3; PP. 243-289; BIBL. 3 REF.Article

Isothermal growth of homogeneous Hg_1-yCd_xMn_yTe crystalsPIOTROWSKI, T.Journal of crystal growth. 1985, Vol 71, Num 2, pp 453-455, issn 0022-0248Article

THERMAL FIGURE OF MERIT M LIMIT FOR (CDHG)TE PHOTOCONDUCTIVE DETECTORSPIOTROWSKI J; PIOTROWSKI T.1978; INFRARED PHYS.; GBR; DA. 1978; VOL. 18; NO 4; PP. 309-314; BIBL. 6 REF.Article

Lexicography in Poland : Early beginnings - 1997PIOTROWSKI, T.Historiographia linguistica. 1998, Vol 25, Num 1-2, pp 1-24, issn 0302-5160Article

Specification of flame arresting devices for manifolded low pressure storage tanksPIOTROWSKI, T. C.Plant/operations progress. 1991, Vol 10, Num 2, pp 102-106, issn 0278-4513, 5 p.Article

ULTIMATE DETECTIVITY OF (CD HG) TE INFRARED PHOTOCONDUCTORSIGRAS E; PIOTROWSKI J; PIOTROWSKI T et al.1979; INFRARED PHYS.; GBR; DA. 1979; VOL. 19; NO 2; PP. 143-149; BIBL. 12 REF.Article

NARROW BAND/CDHG/TE PHOTODETECTORSIGRAS E; NOWAK Z; PIOTROWSKI J et al.1979; INTERNATIONAL SYMPOSIUM ON PHOTON-DETECTORS. 8/1978/PRAHA; HUN; BUDAPEST: IMEKO; DA. 1979; PP. 83-90; BIBL. 3 REF.Conference Paper

HETEROEPITAXIAL HOMOGENEOUS CD_XHG_1-XTE FILMSNOWAK Z; PIOTROWSKI J; PIOTROWSKI T et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 52; NO 3; PP. 405-413; BIBL. 16 REF.Article

Zestaw urzadzeń do pomiaru i rejestracji wahań zwierciadła wody = Appareillage de mesure et d'enregistrement des variations du niveau d'eauMARCINIAK, M; PIOTROWSKI, T.1986, Vol 25, pp 10-16, issn 0304-520X, 1(121)Article

Photovoltaic phenomena in inhomogeneous semiconductorsSIKORSKI, S; PIOTROWSKI, T.Progress in quantum electronics. 2003, Vol 27, Num 5, pp 295-365, issn 0079-6727, 71 p.Article

Photovoltaic effects in an inhomogeneous semiconductor with position-dependent temperaturePIOTROWSKI, T; SIKORSKI, S.Semiconductor science and technology. 2001, Vol 16, Num 9, pp 750-758, issn 0268-1242Article

Flux pinning by anisotropic arrays of antidots in superconducting thin filmsKOLESNIK, S; VLASKO-VLASOV, V; WELP, U et al.Physica. C. Superconductivity and its applications. 2000, Vol 341-48, pp 1093-1094, 2Conference Paper

Surfology: concrete surface evaluation prior to repairCOURARD, L; MICHEL, F; SCHWALL, D et al.WIT transactions on engineering sciences. 2009, Vol v. 64, pp 407-416, issn 1746-4471, isbn 978-1-8456-4189-4 1-8456-4189-2, 1Vol, 10 p.Conference Paper

Statistical methods of determining the QD dimensions based on atomic force microscopy measurementsPIOTROWSKI, T; KACZMARCZYK, M.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S347-S350, SUP1Conference Paper

Accumulation and exclusion of excess carriers observed in inhomogeneous germanium samplesTESLENKO, G. I; PIOTROWSKI, T; PULTORAK, J et al.Semiconductor science and technology. 1996, Vol 11, Num 1, pp 133-134, issn 0268-1242Article

Characterization of oxygen impurity concentration in silicon based on thermal emission measurementsMALYUTENKO, V. K; CHERNYAKOVSKY, V. I; PIOTROWSKI, T et al.Infrared physics & technology. 1996, Vol 37, Num 4, pp 499-504, issn 1350-4495Article

Influence of intrinsic stresses on crystallographic defects distribution in Cz-Si wafersPIOTROWSKI, T; JUNG, W.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2000, Vol 288, Num 2, pp 200-204, issn 0921-5093Conference Paper

Characterization of silicon wafer bonding by observation in transmitted infrared radiation from an extended sourcePIOTROWSKI, T; JUNG, W.Thin solid films. 2000, Vol 364, Num 1-2, pp 274-279, issn 0040-6090Conference Paper

Photoluminescence studies of Hg_1-xMn_xTe single crystalsPIOTROWSKI, T; TOMM, J. W; PUHLMANN, N et al.Physica status solidi. A. Applied research. 1990, Vol 117, Num 2, pp K181-K184, issn 0031-8965Article

Bridgman growth and properties of Hg_1-xMn_x single crystalsPIOTROWSKI, T; DE MELO, O; LECCABUE, F et al.Materials letters (General ed.). 1990, Vol 10, Num 6, pp 296-300, issn 0167-577X, 5 p.Article

Application of non-linear theory to analysis of benedicks effect in semiconductorsPIOTROWSKI, T; JUNG, W; SIKORSKI, S et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 4, pp 1063-1067, issn 1862-6300, 5 p.Conference Paper

IR study of exclusion-accumulation effects enhanced by the geometrical factorMALYUTENKO, V. K; TESLENKO, G. I; VAINBERG, V. V et al.Semiconductor science and technology. 2000, Vol 15, Num 11, pp 1054-1060, issn 0268-1242Article