Effects of Crystal Phase Mixing on the Electrical Properties of InAs NanowiresTHELANDER, Claes; CAROFF, Philippe; PLISSARD, Sébastien et al.Nano letters (Print). 2011, Vol 11, Num 6, pp 2424-2429, issn 1530-6984, 6 p.Article

Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First BilayerCONESA-BOJ, Sònia; KRIEGNER, Dominik; HAN, Xiang-Lei et al.Nano letters (Print). 2014, Vol 14, Num 1, pp 326-332, issn 1530-6984, 7 p.Article

Reversible Switching of InP Nanowire Growth Direction by Catalyst EngineeringJIA WANG; PLISSARD, Sébastien R; VERHEIJEN, Marcel A et al.Nano letters (Print). 2013, Vol 13, Num 8, pp 3802-3806, issn 1530-6984, 5 p.Article

Quantized Conductance in an InSb NanowireWEPEREN, Ilse Van; PLISSARD, Sébastien R; BAKKERS, Erik P. A. M et al.Nano letters (Print). 2013, Vol 13, Num 2, pp 387-391, issn 1530-6984, 5 p.Article

Quantum computing based on semiconductor nanowires : MATERIALS ISSUES FOR QUANTUM COMPUTATIONFROLOV, Sergey M; PLISSARD, Sébastien R; NADJ-PERGE, Stevan et al.MRS bulletin. 2013, Vol 38, Num 10, pp 809-815, issn 0883-7694, 7 p.Article

From InSb Nanowires to Nanocubes: Looking for the Sweet SpotPLISSARD, Sébastien R; SLAPAK, Dorris R; VERHEIJEN, Marcel A et al.Nano letters (Print). 2012, Vol 12, Num 4, pp 1794-1798, issn 1530-6984, 5 p.Article

High optical quality single crystal phase wurtzite and zincblende InP nanowiresVU, Thuy T. T; ZEHENDER, Tilman; VERHEIJEN, Marcel A et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 11, issn 0957-4484, 115705.1-115705.6Article

Efficiency Enhancement of InP Nanowire Solar Cells by Surface CleaningYINGCHAO CUI; JIA WANG; BAKKERS, Erik P. A. M et al.Nano letters (Print). 2013, Vol 13, Num 9, pp 4113-4117, issn 1530-6984, 5 p.Article