Electronic potentials on surface sites of layered copper oxidesPROSANDEYEV, S. A.Surface science. 1995, Vol 340, Num 1-2, pp L978-L982, issn 0039-6028Article

A deviation from the Coulomb law for interacting microscopic impurities in a perovskite-like latticePROSANDEYEV, S. A; RIABCHINSKI, A. I.Journal of physics. Condensed matter (Print). 1996, Vol 8, Num 5, pp 505-516, issn 0953-8984Article

Could the oxygen vacancy in oxides of the perovskite family be a dipole center ?PROSANDEYEV, S. A; OSIPENKO, I. A.Physica status solidi. B. Basic research. 1995, Vol 192, Num 1, pp 37-43, issn 0370-1972Article

Localization of electrons in LaCuO3-δ and BaPb0.75Bi0.25O3-δPROSANDEYEV, S. A; TENNENBOUM, I. M.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 35, pp 7013-7025, issn 0953-8984Article

Alignment of microscopic impurities in incipient ferroelectricsPROSANDEYEV, S. A; VIKHNIN, V. S; KAPPHAN, S et al.Physica status solidi. A. Applied research. 1999, Vol 172, Num 2, pp 499-508, issn 0031-8965Article

A simple model of the electronic polarization in the perovskite family oxidesPROSANDEYEV, S. A; RIABCHINSKI, A. I.Ferroelectrics (Print). 1997, Vol 198, Num 1-4, pp 115-119, issn 0015-0193Article

Breaking of symmetry of one-electron orbitals at oxygen vacancies in perovskite-type oxidesPROSANDEYEV, S. A; TESLENKO, N. M; FISENKO, A. V et al.Journal of physics. Condensed matter (Print). 1993, Vol 5, Num 50, pp 9327-9344, issn 0953-8984Article

Mid-gap states in the forbidden gap of silicaPROSANDEYEV, S. A; BOUREAU, G; CARNIATO, S et al.Journal of non-crystalline solids. 1999, Vol 245, pp 161-168, issn 0022-3093Conference Paper

Study of intrinsic point defects in oxides of the perovskite family : I. TheoryPROSANDEYEV, S. A; FISENKO, A. V; RIABCHINKSI, A. I et al.Journal of physics. Condensed matter (Print). 1996, Vol 8, Num 36, pp 6705-6717, issn 0953-8984Article

Study of intrinsic point defects in oxides of the perovskite family : II. ExperimentRAEVSKI, I. P; MAKSIMOV, S. M; FISENKO, A. V et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 36, pp 8015-8032, issn 0953-8984Article

Treatment of electrostatic interactions at the Si(1 0 0)-SiO2 interfacePROSANDEYEV, S. A; BOUREAU, G; CARNIATO, S et al.Computational materials science. 1998, Vol 10, Num 1-4, pp 159-162, issn 0927-0256Conference Paper