INFLUENCE OF SURFACE RECOMBINATION-GENERATION IN THE DEPLETION LAYER ON THE I-U CHARACTERISTIC OF A P-N JUNCTIONPULTORAK J.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 73; NO 2; PP. K217-K220; BIBL. 7 REF.Article

ESTIMATION DE LA FLEXIBILITE ET DE LA FIABILITE DES SYSTEMES DE CENTRALES ELECTRIQUES PAR LA METHODE DES ETATS VARIABLESPULTORAK J.1976; GOSPOD. PALIW. ENERG.; POLSKA; DA. 1976; VOL. 24; NO 7; PP. 10-16; ABS. RUSSE ANGL.; BIBL. 7 REF.Article

RESISTANCES A SEMICONDUCTEURS A STRUCTURE P⁺PP⁺KASSUR A; PULTORAK J.1977; ARCH. ELEKTROTECH.; POLSKA; DA. 1977; VOL. 26; NO 1; PP. 149-157; ABS. RUSSE ANGL.; BIBL. 7 REF.Article

Current induced shift of the maximum radiation plane in LE GaAs:Si diodes obtained by LPE techniquePUŁTORAK, J.Physica status solidi. A. Applied research. 1986, Vol 94, Num 1, pp K93-K96, issn 0031-8965Conference Paper

The l-h junction as an element of the semiconductor devicePUŁTORAK, J.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp 11-22, issn 0031-8965Article

Current induced shift of the maximum radiation plane in LE GaAs:Si diodes obtained by LPE techniquePUŁTORAK, J.Physica status solidi. A. Applied research. 1986, Vol 94, Num 1, pp K93-K96, issn 0031-8965Conference Paper

Influence of the current density and internal electric field on the exclusion of excess carriers in long semiconductor samplesPULTORAK, J; SIKORSKI, S; JUNG, W et al.Semiconductor science and technology. 1995, Vol 10, Num 4, pp 395-404, issn 0268-1242Article

Accumulation and exclusion of excess carriers observed in inhomogeneous germanium samplesTESLENKO, G. I; PIOTROWSKI, T; PULTORAK, J et al.Semiconductor science and technology. 1996, Vol 11, Num 1, pp 133-134, issn 0268-1242Article

Negative contrast IR emitting device based on the carrier contact exclusionMALYUTENKO, V. K; VAINBERG, V. V; TESLENKO, G. I et al.Semiconductor science and technology. 2003, Vol 18, Num 7, pp 697-702, issn 0268-1242, 6 p.Article

IR study of exclusion-accumulation effects enhanced by the geometrical factorMALYUTENKO, V. K; TESLENKO, G. I; VAINBERG, V. V et al.Semiconductor science and technology. 2000, Vol 15, Num 11, pp 1054-1060, issn 0268-1242Article

The transient exclusion effect in intrinsic semiconductorsMALYUTENKO, V. K; VAINBERG, V. V; TESLENKO, G. I et al.Semiconductor science and technology. 2002, Vol 17, Num 10, pp 1058-1063, issn 0268-1242Article

Exclusion in the semiconductor p⁺-p-p⁺ structure under conditions of a temperature gradientMALYUTENKO, V. K; SOKOLOV, V. N; VAINBERG, V. V et al.Semiconductor science and technology. 1998, Vol 13, Num 1, pp 54-58, issn 0268-1242Article