ZnO Nanowire Embedded Strain Sensing Cantilever: A New Ultra-Sensitive Technology PlatformRAY, Prasenjit; RAMGOPAL RAO, V.Journal of microelectromechanical systems. 2013, Vol 22, Num 5, pp 995-997, issn 1057-7157, 3 p.Article

Radiation-induced interface-state generation in reoxidized nitrided SiO₂RAMGOPAL RAO, V; VASI, J.Journal of applied physics. 1992, Vol 71, Num 2, pp 1029-1031, issn 0021-8979Article

DC Compact Model for SOI Tunnel Field-Effect TransistorsBHUSHAN, Bharat; NAYAK, Kaushik; RAMGOPAL RAO, V et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 10, pp 2635-2642, issn 0018-9383, 8 p.Article

A novel technique for microfabrication of ultra-thin affinity cantilevers for characterization with an AFMJOSHI, Manoj; RAMGOPAL RAO, V; MUKHERJI, Soumyo et al.Journal of micromechanics and microengineering (Print). 2010, Vol 20, Num 12, issn 0960-1317, 125007.1-125007.8Article

An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETsHARIHARAN, Venkatnarayan; VASI, Juzer; RAMGOPAL RAO, V et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 3, pp 529-532, issn 0018-9383, 4 p.Article

A new oxide trap-assisted NBTI degradation modelJHA, Neeraj K; RAMGOPAL RAO, V.IEEE electron device letters. 2005, Vol 26, Num 9, pp 687-689, issn 0741-3106, 3 p.Article

A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETsHARIHARAN, Venkatnarayan; VASI, Juzer; RAMGOPAL RAO, V et al.Solid-state electronics. 2009, Vol 53, Num 2, pp 218-224, issn 0038-1101, 7 p.Article

The effect of single-halo doping on the low-frequency noise performance of deep submicrometer MOSFETsNARASIMHULU, K; VENKATASURYAM SETTY, I; RAMGOPAL RAO, V et al.IEEE electron device letters. 2006, Vol 27, Num 12, pp 995-997, issn 0741-3106, 3 p.Article

A Novel Drain-Extended FinFET Device for High-Voltage High-Speed ApplicationsSHRIVASTAVA, Mayank; GOSSNER, Harald; RAMGOPAL RAO, V et al.IEEE electron device letters. 2012, Vol 33, Num 10, pp 1432-1434, issn 0741-3106, 3 p.Article

Impact of high-κ gate dielectrics on the device and circuit performance of nanoscale FinFETsMANOJ, C. R; RAMGOPAL RAO, V.IEEE electron device letters. 2007, Vol 28, Num 4, pp 295-297, issn 0741-3106, 3 p.Article

Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETsHARIHARAN, Venkatnarayan; VASI, Juzer; RAMGOPAL RAO, V et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 8, pp 2173-2180, issn 0018-9383, 8 p.Article

Low-Operating-voltage Operation and Improvement in Sensitivity With Passivated OFET Sensors for Determining Total Dose RadiationRAVAL, Harshil N; RAMGOPAL RAO, V.IEEE electron device letters. 2010, Vol 31, Num 12, pp 1482-1484, issn 0741-3106, 3 p.Article

Design and fabrication issues in affinity cantilevers for bioMEMS applicationsKALE, Nitin S; RAMGOPAL RAO, V.Journal of microelectromechanical systems. 2006, Vol 15, Num 6, pp 1789-1794, issn 1057-7157, 6 p.Article

Copper(II) phthalocyanine based organic electronic devices for ionizing radiation dosimetry applicationsRAVAL, Harshil N; SUTAR, D. S; RAMGOPAL RAO, V et al.Organic electronics (Print). 2013, Vol 14, Num 5, pp 1281-1290, issn 1566-1199, 10 p.Article

Insights Into the Design and Optimization of Tunnel-FET Devices and CircuitsPAL, Ashish; SACHID, Angada B; GOSSNER, Harald et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 4, pp 1045-1053, issn 0018-9383, 9 p.Article

Part II: On the Three-Dimensional Filamentation and Failure Modeling of STI Type DeNMOS Device Under Various ESD ConditionsSHRIVASTAVA, Mayank; GOSSNER, Harald; MARYAM SHOJAEI BAGHINI et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 9, pp 2243-2250, issn 0018-9383, 8 p.Article

Part II: A Novel Scheme to Optimize the Mixed-Signal Performance and Hot-carrier Reliability of Drain-Extended MOS DevicesSHRIVASTAVA, Mayank; SHOJAEI BAGHINI, Maryam; GOSSNER, Harald et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 2, pp 458-465, issn 0018-9383, 8 p.Article

Impact of halo doping on the subthreshold performance of deep-submicrometer CMOS devices and circuits for ultralow power analog/mixed-signal applicationsCHAKRABORTY, Saurav; MALLIK, Abhijit; CHANDAN KUMAR SARKAI et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 2, pp 241-248, issn 0018-9383, 8 p.Article

Design of a 0.1 μm single halo (SH) thin film silicon-on-insulator (SOI) MOSFET for analogue applicationsHAKIM, Najeeb-Ud-Din; RAMGOPAL RAO, V; VASI, J et al.Semiconductor science and technology. 2005, Vol 20, Num 9, pp 895-902, issn 0268-1242, 8 p.Article

Role of Injection Barrier in Capacitance-Voltage Measurements of Organic DevicesNIGAM, Akash; NAIR, Pradeep R; PREMARATNE, Malin et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 581-583, issn 0741-3106, 3 p.Article

Part I: On the Behavior of STI-Type DeNMOS Device Under ESD ConditionsSHRIVASTAVA, Mayank; GOSSNER, Harald; MARYAM SHOJAEI BAGHINI et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 9, pp 2235-2242, issn 0018-9383, 8 p.Article

Silanization and antibody immobilization on SU-8JOSHI, Manoj; PINTO, Richard; RAMGOPAL RAO, V et al.Applied surface science. 2007, Vol 253, Num 6, pp 3127-3132, issn 0169-4332, 6 p.Article

Part I: Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS DevicesSHRIVASTAVA, Mayank; SHOJAEI BAGHINI, Maryam; GOSSNER, Harald et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 2, pp 448-457, issn 0018-9383, 10 p.Article

Fabrication and Characterization of a Polymeric Microcantilever With an Encapsulated Hotwire CVD Polysilicon PiezoresistorKALE, Nitin S; NAG, Sudip; PINTO, Richard et al.Journal of microelectromechanical systems. 2009, Vol 18, Num 1, pp 79-87, issn 1057-7157, 9 p.Article

Application of charge pumping technique for sub-micron MOSFET characterizationVISWANATHAN, C. R; RAMGOPAL RAO, V.Microelectronic engineering. 1998, Vol 40, Num 3-4, pp 131-146, issn 0167-9317Conference Paper