FERMI SURFACE AND CHARGE DENSITY WAVES IN NIOBIUM DISELENIDE.RICCO B.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 22; NO 5; PP. 331-333; BIBL. 15 REF.Article

DENSITY OF STATES OF LARGER COMPOUNDS: 2H-NBSE₂.RICCO B.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 77; NO 1; PP. 287-293; ABS. FR.; BIBL. 10 REF.Article

Effects of channel geometries on FET output conductance in saturationRICCO, B.IEEE electron device letters. 1984, Vol 5, Num 9, pp 353-356, issn 0741-3106Article

APPLICATION OF C.C.D.S. TO F.D.M. CHANNEL FILTERING. A PHASE-CANCELLATION SYSTEM.MOLO F; RICCO B.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 23; PP. 704-706; BIBL. 5 REF.Article

THE EFFECT OF ANISOTROPY ON A HYDROGENIC HAMILTONIAN IN AN ELECTRIC FIELD.WEXLER G; RICCO B.1975; PHILOS. MAG.; G.B.; DA. 1975; VOL. 31; NO 3; PP. 609-626; BIBL. 16 REF.Article

ELECTRIC FIELD EFFECTS ON ANISOTROPIC EXCITONS IN LEAD IODIDE.BORDAS J; RICCO B.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 67; NO 2; PP. 577-582; ABS. FR.; BIBL. 15 REF.Article

High-speed digital ICs: a comparison between silicon and GaAsRICCO, B.Alta frequenza. 1986, Vol 55, Num 3, pp 215-221, issn 0002-6557Conference Paper

ON THE PERFORMANCE OF CCD CHANNEL FILTERS FOR TELEPHONE SYSTEMS.ANDRISANO O; CALANDRINO L; RICCO B et al.1977; ALTA FREQ.; ITAL.; DA. 1977; VOL. 46; NO 9; PP. 374-379; BIBL. 4 REF.Article

TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMSBACCARANI G; RICCO B; SPADINI G et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 11; PP. 5565-5570; BIBL. 10 REF.Article

Experimental characterization of circuits for controlled programming of floating-gate MOSFET'sLANZONI, M; RICCO, B.IEEE journal of solid-state circuits. 1995, Vol 30, Num 6, pp 706-709, issn 0018-9200Article

HOT ELECTRONS IN MOS TRANSISTORS: LATERAL DISTRIBUTION OF THE TRAPPED OXIDE CHARGELOMBARDI C; OLIVO P; RICCO B et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 215-217; BIBL. 13 REF.Article

A SINGLE-CHANNEL PCM VOICE CODEC IN NMOS TECHNOLOGYGALIMBERTI GB; POLUZZI R; BACCARANI G et al.1981; ALTA FREQ.; ISSN 0002-6557; ITA; DA. 1981; VOL. 50; NO 6; PP. 294-301; BIBL. 14 REF.Article

Physics of resonant tunneling: the one-dimensional double barrier caseRICCO, B; AZBEL, M. YA.Physical review. B, Condensed matter. 1984, Vol 29, Num 4, pp 1970-1981, issn 0163-1829Article

Tunneling through a multiwell one-dimensional structureRICCO, B; AZBEL, M. YA.Physical review. B, Condensed matter. 1984, Vol 29, Num 8, pp 4356-4363, issn 0163-1829Article

A TIGHT BINDING FIT TO THE BANDSTRUCTURE OF 2H-NBSE₂ AND NBS₂.DORAN NJ; RICCO B; TITTERINGTON DJ et al.1978; J. PHYS. C; G.B.; DA. 1978; VOL. 11; NO 4; PP. 685-698; BIBL. 11 REF.Article

Design of an X-band transformer-coupled amplifier with improved stability and layoutSELMI, L; RICCO, B.IEEE journal of solid-state circuits. 1993, Vol 28, Num 6, pp 701-703, issn 0018-9200Article

TEMPERATURE DEPENDENT CONDUCTIVITY OF CLOSELY COMPENSATED PHOSPHORUS-DOPED SILICON.FINETTI M; MAZZONI AM; PASSARI L et al.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 35; NO 5; PP. 1141-1151; BIBL. 11 REF.Article

Enhanced reliability evaluation for self-checking circuitsMETRA, C; RICCO, B.Electronics Letters. 1994, Vol 30, Num 10, pp 776-778, issn 0013-5194Article

Modeling temperature effects in the DC I-V characteristics of GaAs MESFET'sSELMI, L; RICCO, B.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 2, pp 273-277, issn 0018-9383Article

An analytical model of the energy distribution of hot electronsCASSI, D; RICCO, B.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 6, pp 1514-1521, issn 0018-9383, 8 p., part 1Article

Space-charge limitations of tunneling resonancesRICCO, B; OLIVO, P.Superlattices and microstructures. 1986, Vol 2, Num 1, pp 79-81, issn 0749-6036Article

Hot-electron-induced defects at the Si-SiO₂ interface at high fields at 295 and 77 KFISCHETTI, M. V; RICCO, B.Journal of applied physics. 1985, Vol 57, Num 8, pp 2854-2859, issn 0021-8979, part 1Article

Temperature dependence of the current in SiO₂ in the high field tunneling regimeRICCO, B; FISCHETTI, M. V.Journal of applied physics. 1984, Vol 55, Num 12, pp 4322-4329, issn 0021-8979Article

Frequency-resolved measurements for the characterization of MOSFET parameters at low longitudinal fieldSELMI, L; RICCO, B.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 2, pp 315-320, issn 0018-9383Article

THE ELECTRONIC SUSCEPTIBILITY AND CHARGE DENSITY WAVES IN 2H LAYER COMPOUNDS.DORAN NJ; RICCO B; SCHREIBER M et al.1978; J. PHYS. C; G.B.; DA. 1978; VOL. 11; NO 4; PP. 699-705; BIBL. 19 REF.Article