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Compositional control in molecular beam epitaxy growth of GaNyAs1-y on GaAs (001) using an Ar/N2 RF plasmaGUPTA, J. A; WASILEWSKI, Z. R; SPRINGTHORPE, A. J et al.Journal of crystal growth. 2002, Vol 242, Num 1-2, pp 141-154, issn 0022-0248Article

InAs/GaAs(100) self-assembled quantum dots: arsenic pressure and capping effectsRIEL, B. J; HINZER, K; MOISA, S et al.Journal of crystal growth. 2002, Vol 236, Num 1-3, pp 145-154, issn 0022-0248Article

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