Effect of pressure on reaction between deuterated water and thin amorphous silica filmsROCHET, F; RIGO, S.Philosophical magazine letters. 1988, Vol 57, Num 2, pp 123-128, issn 0950-0839Article

AN ¹⁸O STUDY OF COOPERATIVE DIFFUSION AND CHEMICAL REACTION DURING THERMAL TREATMENTS OF SILICA FILMS IN WATER VAPORRIGO S; ROCHET F; AGIUS B et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 4; PP. 867-876; BIBL. 30 REF.Article

Influence of Te on the morphology of InAs self-assembled nanocrystalsSAFAR, G. A. M; RODRIGUES, W. N; MOREIRA, M. V. B et al.Journal of crystal growth. 1999, Vol 201202, pp 1172-1175, issn 0022-0248Conference Paper

Low-pressure oxidation of silicon stimulated by low-energy electron bombardmentCOLLOT, P; GAUTHERIN, G; AGIUS, B et al.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1985, Vol 52, Num 6, pp 1051-1069, issn 0141-8637Article

Structural evolution of very thin silicon oxide films during thermal growth in dry oxygenAGIUS, B; RIGO, S; ROCHET, F et al.Applied physics letters. 1984, Vol 44, Num 1, pp 48-50, issn 0003-6951Article

DFT calculations of XPS/NEXAFS and IR spectra to elucidate the reaction products of acetonitrile with Si(001)-2 × 1CARNIATO, S; ROCHET, F; GALLET, J.-J et al.Surface science. 2007, Vol 601, Num 23, pp 5515-5525, issn 0039-6028, 11 p.Article

Adsorption of 2-butyne on Si(001) at room temperature : A valence band photoemission studyBOURNEL, F; GALLET, J.-J; ROCHET, F et al.Surface science. 2007, Vol 601, Num 18, pp 3750-3754, issn 0039-6028, 5 p.Conference Paper

Dynamic and kinetic aspects of the adsorption of acrylonitrile on Si(001)-2×1RANGAN, S; KUBSKY, S; KOHLER, U et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 12, pp 125320.1-125320.9, issn 1098-0121Article

Theory assisted interpretation of copper phthalocyanine core levels XPS spectraCARNIATO, S; DUFOUR, G; ROCHET, F et al.Journal of electron spectroscopy and related phenomena. 1994, Vol 67, Num 1, pp 189-209, issn 0368-2048Article

Oxidation of siliconMOTT, N. F; RIGO, S; ROCHET, F et al.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1989, Vol 60, Num 2, pp 189-212, issn 0141-8637, 24 p.Article

Preparation by DC single target sputtering and characterization of superconducting BiSrCaCuO filmsRAFFY, H; VAURES, A; ARABSKI, J et al.Solid state communications. 1988, Vol 68, Num 2, pp 235-238, issn 0038-1098Article

An ¹⁸O study of the oxidation mechanism of silicon in dry oxygenROCHET, F; AGIUS, B; RIGO, S et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 4, pp 914-923, issn 0013-4651Article

Resonant Auger spectroscopy study of charge transfer phenomena in N is core-excited acetonitrile adsorbates on Si(001)-2 x 1GALLET, J.-J; BOURNEL, F; CARNIATO, S et al.Surface science. 2007, Vol 601, Num 2, pp 552-561, issn 0039-6028, 10 p.Article

Adsorption of benzonitrile on Si(001)-2×1 at 300 KRANGAN, S; GALLET, J.-J; BOUMEL, F et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 16, pp 165318.1-165318.12, issn 1098-0121Article

Experimental and theoretical NEXAFS/XPS study of the room-temperature adsorption of acetonitrile on Si(001)-2×1RANGAN, S; BOURNEL, F; GALLET, J.-J et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 16, pp 165319.1-165319.11, issn 1098-0121Article

The As-terminated Si(001) surface and its oxidation in molecular oxygen : an Si 2p and As 3d core-level study with synchrotron radiationROCHET, F; PONCEY, C; DUFOUR, G et al.Surface science. 1995, Vol 326, Num 3, pp 229-242, issn 0039-6028Article

Modification of SiO through room-temperature plasma treatments, rapid thermal annealings, and laser irradiation in a nonoxidizing atmosphereROCHET, F; DUFOUR, G; ROULET, H et al.Physical review. B, Condensed matter. 1988, Vol 37, Num 11, pp 6468-6477, issn 0163-1829Article

The thermal oxidation of silicon. The special case of the growth of very thin filmsROCHET, F; RIGO, S; FROMENT, M et al.Advances in Physics. 1986, Vol 35, Num 3, pp 237-274, issn 0001-8732Article

Adsorption of acetonitrile and acrylonitrile on Si(001)-2 x 1 at room temperature studied by synchrotron radiation photoemission and NEXAFS spectroscopiesBOURNEL, F; GALLET, J.-J; KUBSKY, S et al.Surface science. 2002, Vol 513, Num 1, pp 37-48, issn 0039-6028Article

Acetylene on Si(111): carbon incorporation in the growth of c-SiC thin layersDE CRESCENZI, M; BERNARDINI, R; POLLANO, S et al.Surface science. 2001, Vol 489, Num 1-3, pp 185-190, issn 0039-6028Article

Temperature effects on the Si/SiO₂ interface defects and suboxide distributionJOLLY, F; CANTIN, J. L; ROCHET, F et al.Journal of non-crystalline solids. 1999, Vol 245, pp 217-223, issn 0022-3093Conference Paper

Copper phthalocyanine on Si(111)-7×7 and Si(001)-2×1 surfaces : an X-ray photoemission spectroscopy and synchrotron X-ray absorption spectroscopy studyDUFOUR, G; PONCEY, C; ROCHET, F et al.Surface science. 1994, Vol 319, Num 3, pp 251-266, issn 0039-6028Article

Physicochemistry of laser-deposited BiSrCaCuO thin films studied by XPS and XASROULET, H; DUFOUR, G; CHEENNE, A et al.DUFOUR, G; CHEENNE, A et al.Applied surface science. 1991, Vol 47, Num 2, pp 173-185, issn 0169-4332, 13 p.Article

Growth of epitaxial silica on vicinal Si(001) surfaces during thermal oxidation in O₂ROCHET, F; FROMENT, M; D'ANTERROCHES, C et al.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1989, Vol 59, Num 3, pp 339-363, issn 0141-8637Article

Contrasted behavior of Si(001) and Si(111) surfaces with respect to NH₃ adsorption and thermal nitridation : a N 1s and Si2p core level study with synchrotron radiationDUFOUR, G; ROCHET, F; ROULET, H et al.Surface science. 1994, Vol 304, Num 1-2, pp 33-47, issn 0039-6028Article