au.\*:("RODRIGUES, S. C. P")
Results 1 to 18 of 18
Selection :
Controlling the charge and the spin polarization distributions in (In, Ga, Mn)as-based diluted magnetic semiconductor multilayered structuresDA CUNHA LIMA, I. C; RODRIGUES, S. C. P; SIPAHI, G. M et al.Journal of superconductivity. 2005, Vol 18, Num 1, pp 61-67, issn 0896-1107, 7 p.Conference Paper
The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductorRODRIGUES, S. C. P; ARAUJO, Y. R. V; SIPAHI, G. M et al.Applied surface science. 2008, Vol 255, Num 3, pp 709-711, issn 0169-4332, 3 p.Conference Paper
Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wellsRODRIGUES, S. C. P; SIPAHI, G. M.Journal of crystal growth. 2002, Vol 246, Num 3-4, pp 347-354, issn 0022-0248, 8 p.Conference Paper
Luminescence studies on nitride quaternary alloys double quantum wellsRODRIGUES, S. C. P; DOS SANTOS, O. F. P; SCOLFARO, L. M. R et al.Applied surface science. 2008, Vol 254, Num 23, pp 7790-7793, issn 0169-4332, 4 p.Conference Paper
Design of InGaN/AlInGaN superlattices for white-light device applicationsRODRIGUES, S. C. P; D'EURYDICE, M. N; SIPAHI, G. M et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 1002-1005, issn 0959-8324, 4 p.Conference Paper
Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wellsRODRIGUES, S. C. P; SIPAHI, G. M; SCOLFARO, L. M. R et al.Physica. B, Condensed matter. 2001, Vol 302-03, pp 106-113, issn 0921-4526Conference Paper
Electrical conductivity of δ doping superlattices parallel to the growth directionLEITE, J. R; RODRIGUES, S. C. P; SCOLFARO, L. M. R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 250-255, issn 0921-5107Conference Paper
Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wellsD'EURYDICE, M. N; SIPAHI, G. M; RODRIGUES, S. C. P et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 1029-1033, issn 0959-8324, 5 p.Conference Paper
Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substratesNORIEGA, O. C; TABATA, A; SCHIKORA, D et al.Journal of crystal growth. 2003, Vol 252, Num 1-3, pp 208-212, issn 0022-0248, 5 p.Article
Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructuresRODRIGUES, S. C. P; SIPAHI, G. M; SCOLFARO, L. M. R et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 23, pp 5813-5827, issn 0953-8984Article
Inter- and intraband transitions in cubic nitride quantum wellsRODRIGUES, S. C. P; SIPAHI, G. M; SCOLFARO, L. M. R et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 121-127, issn 0031-8965Conference Paper
Optical characterization of cubic AlGaN/GaN Quantum wellsKOHLER, U; AS, D. J; SIPAHI, G. M et al.Physica status solidi. A. Applied research. 2002, Vol 192, Num 1, pp 129-134, issn 0031-8965Conference Paper
Calculations of optical properties in p-doped nitrides quaternary alloys multiple quantum wellsRODRIGUES, S. C. P; D'EURYDICE, M. N; SIPAHI, G. M et al.Thin solid films. 2006, Vol 515, Num 2, pp 782-785, issn 0040-6090, 4 p.Conference Paper
Optical and electronic properties of AlInGaN/InGaN superlatticesRODRIGUES, S. C. P; SIPAHI, G. M; DA SILVA, E. F et al.Microelectronics journal. 2005, Vol 36, Num 3-6, pp 434-437, issn 0959-8324, 4 p.Conference Paper
Charge and spin distributions in Gai-XMnXAS/GaAs ferromagnetic multilayersRODRIGUES, S. C. P; SCOLFARO, L. M. R; LEITE, J. R et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 16, pp 165308.1-165308.8, issn 1098-0121Article
k.p calculations of electronic and optical properties of p-doped (001) AlGaN/GaN thin superlatticesRODRIGUES, S. C. P; SCOLFARO, L. M. R; SIPAHI, G. M et al.Physica status solidi. B. Basic research. 2002, Vol 234, Num 3, pp 906-910, issn 0370-1972, 5 p.Conference Paper
Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende AlxGa1-xN/GaN superlatticesRODRIGUES, S. C. P; SIPAHI, G. M; SCOLFARO, L. M. R et al.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 14, pp 3381-3387, issn 0953-8984Article
Miniband structures and effective masses of n-type δ-doping superlattices in GaNRODRIGUES, S. C. P; ROSA, A. L; SCOLFARO, L. M. R et al.Semiconductor science and technology. 1998, Vol 13, Num 9, pp 981-988, issn 0268-1242Article