Observations on constitutional resistance to infectionRUMYANTSEV, S. N.Immunology today (Reference ed.). 1992, Vol 13, Num 5, pp 184-187, issn 0167-4919Article

Méthodes de calcul de l'information a priori dans les algorithmes de gradients de régularisationRUMYANTSEV, S. V.Inženerno-fizičeskij žurnal. 1985, Vol 49, Num 6, pp 932-936, issn 0021-0285Article

Low frequency noise in Al0.4Ga0.6N thin filmsPALA, N; RUMYANTSEV, S; GASKA, R et al.IEEE Lester Eastman conference on high performance devices. 2002, pp 164-171, isbn 0-7803-7478-9, 8 p.Conference Paper

Nanometer size field effect transistors for terahertz detectors : TERAHERTZ NANOTECHNOLOGYKNAP, W; RUMYANTSEV, S; VITIELLO, M. S et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 21, issn 0957-4484, 214002.1-214002.10Article

Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETsSTILLMAN, W; SHUR, M. S; VEKSLER, D et al.Electronics Letters. 2007, Vol 43, Num 7, pp 422-423, issn 0013-5194, 2 p.Article

Pathogenic effects of the human chemical biofieldRUMYANTSEV, S. N; GRZESZCZUK, J.Medical hypotheses. 1995, Vol 45, Num 1, pp 94-98, issn 0306-9877Article

Noise in micro-bolometers with silicon-germanium thermo-sensing layerKOSAREV, A; MORENO, M; TORRES, A et al.Thin solid films. 2010, Vol 518, Num 12, pp 3310-3312, issn 0040-6090, 3 p.Article

Low frequency noise in GaN-based two dimensional structuresRUMYANTSEV, S; SHUR, M. S.SPIE proceedings series. 2003, pp 482-488, isbn 0-8194-4978-4, 7 p.Conference Paper

Dynamics of switching in Si and GaAs p-i-n diodesRUMYANTSEV, S. L; TYBULEWICZ, A.Soviet physics. Semiconductors. 1992, Vol 26, Num 11, pp 1097-1101, issn 0038-5700Article

Evaluation of the N- and La-induced defects in the high-_K gate stack using low frequency noise characterizationYOUNG, C. D; VEKSLER, D; RUMYANTSEV, S et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1255-1258, issn 0167-9317, 4 p.Conference Paper

Terahertz detection by GaN/AlGaN transistorsEL FATIMY, A; BOUBANGA TOMBET, S; HU, X et al.Electronics Letters. 2006, Vol 42, Num 23, pp 1342-1344, issn 0013-5194, 3 p.Article

Detection of sub-terahertz and terahertz radiation by plasma waves in silicon field effect transistorsTEPPE, F; MEZIANI, Y; DYAKONOVA, N et al.IEEE Sensors conference. 2004, isbn 0-7803-8692-2, 3Vol, vol 3, 1337-1340Conference Paper

Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanismsRUMYANTSEV, S; LIU, G; STILLMAN, W et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 39, issn 0953-8984, 395302.1-395302.7Article

SixGey:H-based micro-bolometers studied in the terahertz frequency rangeKOSAREV, A; RUMYANTSEV, S; MORENO, M et al.Solid-state electronics. 2010, Vol 54, Num 4, pp 417-419, issn 0038-1101, 3 p.Article

Subterahertz detection by high electron mobility transistors at large forward gate biasDENG, Y; KNAP, W; RUMYANTSEV, S et al.IEEE Lester Eastman conference on high performance devices. 2002, pp 135-142, isbn 0-7803-7478-9, 8 p.Conference Paper

Résolution de problèmes inverses incorrects par application des méthodes de régularisation itérativeALIFANOV, O. M; RUMYANTSEV, S. V.Inženerno-fizičeskij žurnal. 1987, Vol 53, Num 5, pp 843-851, issn 0021-0285Article

Bruit en 1/f d'électrons chauds dans GaAsLEVINSHTEJN, M. E; RUMYANTSEV, S. L.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 9, pp 1651-1656, issn 0015-3222Article

Particularités de l'instabilité de conductivité différentielle négative en présence de deux sortes de porteursLEVINSHTEJN, M. E; RUMYANTSEV, S. L.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 9, pp 1577-1582, issn 0015-3222Article

Degradation of AlGaN-based ultraviolet light emitting diodesSAWYER, S; RUMYANTSEV, S. L; SHUR, M. S et al.Solid-state electronics. 2008, Vol 52, Num 6, pp 968-972, issn 0038-1101, 5 p.Article

Formules pour le gradient de désaccord dans la solution itérative des équations de conduction thermique inverseALIFANOV, O. M; RUMYANTSEV, S. V.Inženerno-fizičeskij žurnal. 1987, Vol 52, Num 3, pp 981-986, issn 0021-0285Article

Rôle de la surface dans la formation du bruit en 1/f dans GaAs-nKIREEV, O. A; RUMYANTSEV, S. L.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 11, pp 2080-2082, issn 0015-3222Article

Bruit en 1/f dans les conditions de magnétorésistance géométrique forteLEVINSHTEJN, M. E; RUMYANTSEV, S. L.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 10, pp 1830-1834, issn 0015-3222Article

Influence of the damage caused by uniaxial compression on the 1/f noise in GaAsLEVINSHTEIN, M. E; RUMYANTSEV, S. L.Soviet physics. Semiconductors. 1990, Vol 24, Num 10, pp 1125-1130, issn 0038-5700, 6 p.Article

Difference between static and dynamic frictional forcesLEVINSHTEIN, M. E; RUMYANTSEV, S. L; TYBULEWICZ, A et al.Physics of the solid state. 1993, Vol 35, Num 4, pp 490-495, issn 1063-7834Article

Relaxation of the photoconductivity and 1/f noise in GaAs subjected to damaging compressionLEVINSHTEIN, M. E; RUMYANTSEV, S. L.Soviet physics. Semiconductors. 1991, Vol 25, Num 1, pp 97-99, issn 0038-5700Article