Monte Carlo modeling of transient effects in resonant-tunneling bipolar transistorsRYZHII, M.Japanese journal of applied physics. 1997, Vol 36, Num 8, pp 5060-5062, issn 0021-4922, 1Article

Self-organization in multiple quantum well infrared photodetectorsRYZHII, M; RYZHII, V; SURIS, R et al.Semiconductor science and technology. 2001, Vol 16, Num 4, pp 202-208, issn 0268-1242Article

Modeling of terahertz response of metal-semiconductor-metal photodetectorsRYZHII, M; KHMVROVA, I; RYZHII, V et al.SPIE proceedings series. 1999, pp 279-285, isbn 0-8194-3099-4Conference Paper

Heterostructure laser-transistors controlled by resonant-tunnelling electron extractionRYZHII, V; WILLANDER, M; RYZHII, M et al.Semiconductor science and technology. 1997, Vol 12, Num 4, pp 431-438, issn 0268-1242Article

Effect of near-ballistic photoelectron transport on resonant plasma-assisted photomixing in high-electron mobility transistorsRYZHII, M; RYZHII, V; SHUR, M. S et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S74-S76, issn 0268-1242Conference Paper

Comparison studies of infrared phototransistors with a quantum-well and a quantum-wire baseRYZHII, V; KHMYROVA, I; RYZHII, M et al.Journal de physique. IV. 1996, Vol 6, Num 3, pp C3.157-C3.161, issn 1155-4339Conference Paper

A heterogeneous coupled oscillator model for simulation of ECG signalsRYZHII, E; RYZHII, M.Computer methods and programs in biomedicine (Print). 2014, Vol 117, Num 1, pp 40-49, issn 0169-2607, 10 p.Article

Electromechanical and plasma resonances in two-dimensional electron systems with mechanically floating gatesRYZHII, M; RYZHII, V; HU, Y et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 68400L.1-68400L.12, issn 0277-786X, isbn 978-0-8194-7015-7Conference Paper

Optically controlled plasma resonances in induced-base hot-electron transistorsRYZHII, V; KHMYROVA, I; RYZHII, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 9A, pp 5472-5474, issn 0021-4922, 1Article

Comparison of dark current, responsivity and detectivity in different intersubband infrared photodetectorsRYZHII, V; KHMYROVA, I; RYZHII, M et al.Semiconductor science and technology. 2004, Vol 19, Num 1, pp 8-16, issn 0268-1242, 9 p.Article

Resonant-tunneling bipolar transistors with a quantum-well baseRYZHII, V; KHMYROVA, I; RYZHII, M et al.Japanese journal of applied physics. 1996, Vol 35, Num 10, pp 5280-5283, issn 0021-4922, 1Article

Electric-field and space-charge distributions in InAs/GaAs quantum-dot infrared photodetectors: ensemble Monte Carlo particle modelingRYZHII, M; RYZHII, V; MITIN, V et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 411-414, issn 0959-8324, 4 p.Conference Paper

Periodic electric-field and charge domains in multiple quantum well infrared photodetectorsRYZHII, V; RYZHII, M.Infrared physics & technology. 2001, Vol 42, Num 3-5, pp 249-257, issn 1350-4495Conference Paper

Analysis of integrated quantum-well infrared photodetector and light-emitting diode for implementing pixelless imaging devicesRYZHII, V; LIU, H. C; KHMYROVA, I et al.IEEE journal of quantum electronics. 1997, Vol 33, Num 9, pp 1527-1531, issn 0018-9197Article

Quantum well infrared photodetectorf with optical outputRYZHII, V; ERSHOV, M; RYZHII, M et al.Japanese journal of applied physics. 1995, Vol 34, Num 1A, pp L38-L40, issn 0021-4922, 2Article

Dynamic effects in double graphene-layer structures with inter-layer resonant-tunnelling negative conductivityRYZHII, V; SATOU, A; OTSUJI, T et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 31, issn 0022-3727, 315107.1-315107.6Article

Graphene terahertz uncooled bolometersRYZHII, V; OTSUJI, T; RYZHII, M et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 6, issn 0022-3727, 065102.1-065102.5Article

Graphene under optical pumping: nonequlibrium distributions, population inversion, and terahertz lasingSATOU, A; RYZHII, M; VASKO, F. T et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7211, issn 0277-786X, isbn 978-0-8194-7457-5, 721119.1-721119.11Conference Paper

Mechanism of self-excitation of terahertz plasma oscillations in periodically double-gated electron channels : Heterostructure Terahertz DevicesRYZHII, V; SATOU, A; RYZHII, M et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 38, issn 0953-8984, 384207.1-384207.6Article

Optimisation of bistable quantum well IR phototransistorsRYZHII, V; KHMYROVA, I; RYZHII, M et al.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 5, pp 283-286, issn 1350-2433Article

Theoretical study of an infrared-to-visible wavelength quantum-well converterRYZHII, V; KHMYROVA, I; ERSHOV, M et al.Semiconductor science and technology. 1995, Vol 10, Num 9, pp 1272-1276, issn 0268-1242Article