The bistability effect in resonant-tunnelling phototransistors with multiple quantum well structureRYZHII, V.Semiconductor science and technology. 1994, Vol 9, Num 6, pp 1209-1214, issn 0268-1242Article

Intersubband infrared photodetectorsRYZHII, V.International journal of high speed electronics and systems. 2002, Vol 12, Num 3, 339 p.Serial Issue

Infrared hot-electron phototransistorRYZHII, V.Japanese journal of applied physics. 1994, Vol 33, Num 1A, pp 78-82, issn 0021-4922, 1Article

Impact of plasma effects on the high-frequency performance of induced-base hot-electron transistorsRYZHII, V.Japanese journal of applied physics. 1997, Vol 36, Num 5A, pp L550-L552, issn 0021-4922, 2Article

Unipolar Darlington infrared phototransistorRYZHII, V.Japanese journal of applied physics. 1997, Vol 36, Num 4A, pp L415-L417, issn 0021-4922, 2Article

The theory of quantum-dot infrared phototransistorsRYZHII, V.Semiconductor science and technology. 1996, Vol 11, Num 5, pp 759-765, issn 0268-1242Article

A bistable resonant-tunnelling hot-electron infrared phototransistorRYZHII, V.Semiconductor science and technology. 1994, Vol 9, Num 1, pp 26-29, issn 0268-1242Article

Terahertz operation of quantum-well intersubband hot-electron phototransistorsRYZHII, V.IEEE journal of quantum electronics. 1999, Vol 35, Num 6, pp 928-935, issn 0018-9197Article

An infrared lateral hot-electron phototransistorRYZHII, V.Semiconductor science and technology. 1994, Vol 9, Num 7, pp 1391-1394, issn 0268-1242Article

Imaging performance of advanced QWIP focal plane arraysGOLDBERG, Arnold.International journal of high speed electronics and systems. 2002, Vol 12, Num 3, pp 659-690, 32 p.Article

The bistability effect in a bipolar transistor with resonant-tunneling collector structureRYZHII, V; KHRENOV, G.Semiconductor science and technology. 1992, Vol 7, Num 9, pp 1178-1182, issn 0268-1242Article

Multi-color, broadband quantum well infrared photodetectors for mid-, long-, and very long-wavelength infrared applicationsLI, Sheng S.International journal of high speed electronics and systems. 2002, Vol 12, Num 3, pp 761-801, 41 p.Article

Monte-Carlo simulation of gate leakage current effect in P-channel GaAs/Al_0.7Ga_0.3As HIGFETPANKRATOV, V; RYZHII, V.Solid-state electronics. 1994, Vol 37, Num 1, pp 211-212, issn 0038-1101Article

High-field electron transport in SiGe alloyERSHOV, M; RYZHII, V.Japanese journal of applied physics. 1994, Vol 33, Num 3A, pp 1365-1371, issn 0021-4922, 1Article

Corrugated quantum well infrared photodetectors and arraysCHOI, K. K.International journal of high speed electronics and systems. 2002, Vol 12, Num 3, pp 715-759, 45 p.Article

Electrical and optical properties of a quantum-well infrared phototransistorRYZHII, V; ERSHOV, M.Semiconductor science and technology. 1995, Vol 10, Num 5, pp 687-690, issn 0268-1242Article

Tunnelling processes in broken-gap heterostructuresRYZHII, V; ZHAKHAROVA, A.Semiconductor science and technology. 1992, Vol 7, Num 7, pp 980-984, issn 0268-1242Article

Intervalley mechanism of negative difference conductance of double-heterojunction bipolar transistorsRYZHII, V; KHMYROVA, I.Semiconductor science and technology. 1991, Vol 6, Num 8, pp 771-776, issn 0268-1242, 6 p.Article

Tunnelling- and barrier-injection transit-time mechanisms of terahertz plasma instability in high-electron mobility transistorsRYZHII, V; SHUR, M.Semiconductor science and technology. 2002, Vol 17, Num 11, pp 1168-1171, issn 0268-1242, 4 p.Article

Quantum well infrared photoconductors in infrared detectors technologyROGALSKI, A.International journal of high speed electronics and systems. 2002, Vol 12, Num 3, pp 593-658, 66 p.Article

Theory of quantum well IR photodetectors with tunnelling electron injectionRYZHII, V.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 5, pp 343-349, issn 1350-2433Article

Infrared multiple-quantum-well phototransistorRYZHII, V; ERSHOV, M.Solid-state electronics. 1995, Vol 38, Num 1, pp 149-155, issn 0038-1101Article

Nonlinear effects in microwave photoconductivity of two-dimensional electron systemsRYZHII, V; SURIS, R.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 40, pp 6855-6869, issn 0953-8984, 15 p.Article

Frequency-dependent collector transport factor of lateral hot electron transistorKHRENOV, G; RYZHII, V.Japanese journal of applied physics. 1995, Vol 34, Num 4A, pp 1796-1799, issn 0021-4922, 1Article

High-frequency operation of lateral hot-electron transistorsRYZHII, V; KHRENOV, G.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 1, pp 166-171, issn 0018-9383Article