ZUR REALSTRUKTUR VON HOCHDOTIERTEN GALLIUMARSENID-EINKRISTALLEN. = STRUCTURE REELLE DE MONOCRISTAUX D'ARSENIURE DE GALLIUM FORTEMENT DOPESSCHUMANN B.1976; KRISTALL. U. TECH.; DTSCH.; DA. 1976; VOL. 11; NO 1; PP. 41-48; ABS. ANGL.; BIBL. 22 REF.Article

MEASUREMENT OF LATTICE PARAMETERS OF A^IB^IIIC^VI₂ CHALCOPYRITE-TYPE EPITAXIAL LAYERS USING REFLECTION HIGH ENERGY ELECTRON DIFFRACTIONTEMPEL A; SCHUMANN B.1979; THIN SOLID FILMS; NLD; DA. 1979; VOL. 59; NO 1; PP. 99-104; BIBL. 6 REF.Article

UEBER DEN ZUSAMMENHANG ZWISCHEN LAMELLAR-PROTEINEN UND THYLAKOIDMORPHOLOGIE BEI DER BIOSYNTHESE GRUENER, ETIOLIERTER UND MUTIERTER PLASTIDEN VON HORDEUM, PELARGONIUM UND LYCOPERSICON. I. CHARAKTERISIERUNG DER PLASTIDALEN LAMELLARPROTEINE. = LES RELATIONS ENTRE LES PROTEINES LAMELLAIRES ET LA MORPHOLOGIE DES THYLAKOIDES AU COURS DE LA FORMATION DES PLASTES VERTS, ETIOLES ET MUTANTS CHEZ H., P. ET L. I. CARACTERISATION DES PROTEINES LAMELLAIRES PLASTIDIALESSCHUMANN B; BORNER T.1976; ACTA HISTOCHEM., SUPPL.; ALLEM.; DA. 1976; NO 17; PP. 153-155; ABS. ANGL.; (BIOMORPHOSE ZELLORGANELLEN METHODEN SUBMIKROSK. UNTERS. IM RAHMEN DER ARBEITSTAG. ELEKTRONENMIKROSK. 8; BERLIN; 1975)Conference Paper

ROENTGENTOPOGRAFISCHE UNTERSUCHUNGEN AN HOCHDOTIERTEN GALLIUMARSENID-EINSKRISTALLEN. = ETUDE PAR TOPOGRAPHIE RX DE MONOCRISTAUX D'ARSENIURE DE GALLIUM FORTEMENT DOPESSCHUMANN B; SCHULZ M.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 9; PP. 1029-1039; ABS. ANGL.; BIBL. 21 REF.Article

FESTSCHRIFT FUER GERHARD KELLER ZUM 22.6.1978 = VOLUME DEDIE A GERHARD KELLER POUR LE 22.6.1978CORDEL H; SCHUMANN B.1979; ; DEU; OSNABRUECK: E.T. WENNER; DA. 1979; 192 P.; BIBL. 218 REF.Book

ZUR HETEROEPITAXIE VON A^IB^IIIC₂^VI-VERBINDUNGEN. INTERPRETATION VON RHEED-DIAGRAMMEN. = HETEROEPITAXIE DES COMPOSES A^IB^IIIC₂^VI. INTERPRETATION DES DIAGRAMMES RHEEDTEMPEL A; SCHUMANN B.1978; KRISTALL U. TECH.; DDR; DA. 1978; VOL. 13; NO 4; PP. 389-394; ABS. ENG; BIBL. 5 REF.Article

HEAT TRANSFERT BETWEEN SAPPHIRE AND LEAD = TRANSFERT DE CHALEUR ENTRE LE SAPHIR ET LE PLOMBNITSCHE F; SCHUMANN B.1980; J. LOW TEMP. PHYS.; ISSN 0022-2291; USA; DA. 1980; VOL. 39; NO 1-2; PP. 119-130; BIBL. 17 REF.Article

DETERMINATION OF LATTICE PARAMETERS AT THIN EPITAXIAL LAYERS BY RHEEDTEMPEL A; SCHUMANN B.1979; KRISTALL. U. TECH.; DDR; DA. 1979; VOL. 14; NO 5; PP. 571-574; ABS. GER; BIBL. 5 REF.Article

THE INFLUENCE OF THE LATTICE MISFIT ON THE GROWTH OF CUGASE₂ EPITAXIAL FILMS ON (100)-ORIENTED GAAS AND GAP SUBSTRATESSCHUMANN B; TEMPEL A; KUHN G et al.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 1; PP. 71-75; ABS. GER; BIBL. 4 REF.Article

ADAMANTINE TERNARY EPITAXIAL LAYERSNEUMANN H; KUHN G; SCHUMANN B et al.1980; PROG. CRYST. GROWTH CHARACT.; ISSN 501948; GBR; DA. 1980; VOL. 3; NO 2-3; PP. 157-178; BIBL. 134 REF.Article

INVESTIGATIONS OF FLASH EVAPORATED CUB^IIIC^VI₂ SEMICONDUCTOR THIN FILMS BY RUTHERFORD BACKSCATTERING SPECTROSCOPYHOBLER HJ; FLAGMEYER R; SCHUMANN B et al.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 1; PP. 61-70; ABS. GER; BIBL. 16 REF.Article

THERMAL CONDUCTANCE OF METAL INTERFACES AT LOW TEMPERATURES = CONDUCTANCE THERMIQUE D'INTERFACES METALLIQUES AUX BASSES TEMPERATURESSCHUMANN B; NITSCHE F; PAASCH G et al.1980; J. LOW TEMP. PHYS.; ISSN 0022-2291; USA; DA. 1980; VOL. 38; NO 1-2; PP. 167-189; BIBL. 23 REF.Article

OPTICAL PROPERTIES OF CUIN₂SE_3.5 NEAR THE FUNDAMENTAL ABSORPTION EDGENEUMANN H; PERLT B; SCHUMANN B et al.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 111; NO 2; PP. K133-K136; BIBL. 10 REF.Article

INFLUENCE OF SUBSTRATE SURFACE POLARITY ON EPITAXIAL LAYER GROWTH OF CUINSE₂ ON GAASSCHUMANN B; NEUMANN H; NOWAK E et al.1981; CRYST. RES. TECHNOL.; DDR; DA. 1981; VOL. 16; NO 6; PP. 675-680; ABS. GER; BIBL. 20 REF.Article

EPITAXIAL LAYERS OF CUINTE₂ ON GAASNEUMANN H; NOWAK E; SCHUMANN B et al.1980; KRIST. TECH.; DDR; DA. 1980; VOL. 15; NO 1; PP. 61-69; ABS. GER; BIBL. 31 REF.Article

EPITAXIAL LAYERS OF CUGATE₂ ON GAASSCHUMANN B; TEMPEL A; KUEHN G et al.1979; KRISTALL U. TECH.; DDR; DA. 1979; VOL. 14; NO 6; PP. 665-669; ABS. GER; BIBL. 18 REF.Article

ELECTRICAL PROPERTIES OF AGGASE₂ EPITAXIAL LAYERSNEUMANN H; NOWAK E; SCHUMANN B et al.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 4; PP. 477-481; ABS. GER; BIBL. 27 REF.Article

TEMPERATURE DEPENDENCE OF THE ABSORPTION EDGE IN CUGAS₂HOERIG W; NEUMANN H; RECCIUS E et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 1; PP. 57-62; ABS. GER; BIBL. 38 REF.Article

EPITAXIAL LAYERS OF CUINSE₂ ON GAASSCHUMANN B; GEORGI C; TEMPEL A et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 52; NO 1; PP. 45-52; BIBL. 25 REF.Article

CuInSe₂ epitaxial layers with sphalerite structureKÜHN, G; SCHUMANN, B.Crystal research and technology (1979). 1988, Vol 23, Num 2, pp K40-K42, issn 0232-1300Article

INFLUENCE OF SOURCE COMPOSITION ON THE PROPERTIES OF FLASH-EVAPORATED THIN FILMS IN THE CU-IN-SE SYSTEMNEUMANN H; SCHUMANN B; NOWAK E et al.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 7; PP. 895-900; ABS. GER; BIBL. 18 REF.Article

LIINSE₂ THIN EPITAXIAL FILMS ON (111) A-ORIENTED GAASTEMPEL A; SCHUMANN B; MITARAY S et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 101; NO 4; PP. 339-344; BIBL. 10 REF.Article

STRUCTURAL AND ELECTRICAL PROPERTIES OF CUINSE₂ EPITAXIAL LAYERS PREPARED BY SINGLE-SOURCE EVAPORATIONNEUMANN H; NOWAK E; SCHUMANN B et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 74; NO 2; PP. 197-204; BIBL. 41 REF.Article

GROWTH AND ELECTRICAL PROPERTIES OF EPITAXIAL CUINS₂ THIN FILMS ON GAAS SUBSTRATESNEUMANN H; SCHUMANN B; PETERS D et al.1979; KRISTALL W. TECH.; DDR; DA. 1979; VOL. 14; NO 4; PP. 379-388; ABS. GER; BIBL. 31 REF.Article

Sex, race, age, and hypertension as determinants of employee absenteeismSEXTON, M; SCHUMANN, B. C.American journal of epidemiology. 1985, Vol 122, Num 2, pp 302-310, issn 0002-9262Article