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Charge stabilization of Cr at interstitial sites in GaAsSCOLFARO, L. M. R; FAZZIO, A.Solid state communications. 1988, Vol 66, Num 10, pp 1031-1033, issn 0038-1098Article

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Line shape analysis of photoreflectance spectra from δ-doped structuresENDERLEIN, R; SCOLFARO, L. M. R; MARTINS, J. M. V et al.Superlattices and microstructures. 1992, Vol 12, Num 2, pp 175-179, issn 0749-6036Article

Impurity levels of substitutional chalcones-doped GeCASTINERIA, J. L. P; SCOLFARO, L. M. R; LEITE, J. R et al.Solid state communications. 1991, Vol 79, Num 7, pp 557-560, issn 0038-1098Article

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Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende Al_xGa_1-xN/GaN superlatticesRODRIGUES, S. C. P; SIPAHI, G. M; SCOLFARO, L. M. R et al.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 14, pp 3381-3387, issn 0953-8984Article

Influence of electric fields in the Si delta-doped GaAs self-consistent potential profileSCOLFARO, L. M. R; CAMATA, R. P; MARTINS, J. M. V et al.Superlattices and microstructures. 1992, Vol 12, Num 2, pp 203-206, issn 0749-6036Article

The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductorRODRIGUES, S. C. P; ARAUJO, Y. R. V; SIPAHI, G. M et al.Applied surface science. 2008, Vol 255, Num 3, pp 709-711, issn 0169-4332, 3 p.Conference Paper

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Structural and optical properties of CaOMEDEIROS, S. K; ALBUQUERQUE, E. L; MAIA, F. F et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 1058-1061, issn 0959-8324, 4 p.Conference Paper

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Fano-like electron-phonon interference in δ-doping GaAs superlatticesPUSEP, Yu. A; SILVA, M. T. O; GALZERANI, J. C et al.Superlattices and microstructures. 1998, Vol 23, Num 5, pp 1033-1035, issn 0749-6036Article

First principles studies of point defects and impurities in cubic boron nitrideCASTINEIRA, J. L. P; LEITE, J. R; SCOLFARO, L. M. R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 51, Num 1-3, pp 53-57, issn 0921-5107Conference Paper

Electronic properties of multiple Si δ-doped GaAs layers grown by molecular beam epitaxy and migration-enhanced epitaxySHIBLI, S. M; HENRIQUES, A. B; MENDONCA, C. A. C et al.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 700-702, issn 0022-0248Conference Paper

Broadening of the S1 doping layer in planar-doped GaAs in the limit of high concentrationsRODRIGUES, R; GUIMARAES, P. S. S; SAMPAIO, J. F et al.Solid state communications. 1991, Vol 78, Num 9, pp 793-796, issn 0038-1098, 4 p.Article

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