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K overlayer oxidation studied by XPS : the effects of the adsorption and oxidation conditionsLAMONTAGNE, B; SEMOND, F; ROY, D et al.Surface science. 1995, Vol 327, Num 3, pp 371-378, issn 0039-6028Article

Surface morphology of GaN grown by molecular beam epitaxyVEZIAN, S; MASSIES, J; SEMOND, F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 82, Num 1-3, pp 56-58, issn 0921-5107Article

AIN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?LE LOUARN, A; VEZIAN, S; SEMOND, F et al.Journal of crystal growth. 2009, Vol 311, Num 12, pp 3278-3284, issn 0022-0248, 7 p.Article

Advances in cubic silicon carbide surfaces and self-organized one dimensional sub-nanoscale objectsSOUKIASSIAN, P; SEMOND, F.Journal de physique. IV. 1997, Vol 7, Num 6, pp C6.101-C6.113, issn 1155-4339Conference Paper

SIMS investigation of the Si(111) oxidation promoted by potassium overlayersLAMONTAGNE, B; SEMOND, F; ADNOT, A et al.Applied surface science. 1995, Vol 90, Num 4, pp 447-454, issn 0169-4332Article

Windowed growth of AIGaN/GaN heterostructures on Silicon <111> substrates for future MOS integrationCHYURLIA, P; SEMOND, F; LESTER, T et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 2, pp 371-374, issn 1862-6300, 4 p.Article

Mechanisms of ammonia-MBE growth of GaN on SiC for transport devicesTANG, H; ROLFE, S; SEMOND, F et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2091-2095, issn 0022-0248, 5 p.Conference Paper

Inhomogeneous broadening of AlxGa1-xN/GaN quantum wellsNATALI, F; BYRNE, D; LEROUX, M et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 7, pp 075311.1-075311.6, issn 1098-0121Article

AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)CORDIER, Y; SEMOND, F; MASSIES, J et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 393-396, issn 0022-0248, 4 p.Conference Paper

Determination of AlxGa1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavitiesANTOINE-VINCENT, N; NATALI, F; MIHAILOVIC, M et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 3, pp 543-550, issn 0031-8965, 8 p.Article

Modelling and spectroscopy of GaN microcavitiesANTOINE-VINCENT, N; NATALI, F; DISSEIX, P et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 187-192, issn 0031-8965Conference Paper

Optical properties of high-Al-content crack free AlxGa1-xN (x<0.67) films grown on Si(111) by molecular-beam epitaxyNATALI, F; BYRNE, D; LEROUX, M et al.Solid state communications. 2004, Vol 132, Num 10, pp 679-682, issn 0038-1098, 4 p.Article

Pairs of Si atomic lines self-assembling on the β-SiC(100) surface : an 8 x 2 reconstructionDOUILLARD, L; ARISTOV, V. Yu; SEMOND, F et al.Surface science. 1998, Vol 401, Num 1, pp L395-L400, issn 0039-6028Article

Oxidation of Si(111) promoted by K multilayers: K and SiO2 islandsLAMONTAGNE, B; SEMOND, F; ADNOT, A et al.Applied physics. A, Materials science & processing (Print). 1995, Vol 61, Num 2, pp 187-191, issn 0947-8396Article

EUV Detectors Based On AlGaN-on-Si Schottky PhotodiodesMALINOWSKI, P. E; DUBOZ, J.-Y; VAN HOOF, C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8073, issn 0277-786X, isbn 978-0-8194-8663-9, 807302.1-807302.10Conference Paper

Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxyCORDIER, Y; MORENO, J.-C; BARON, N et al.Journal of crystal growth. 2010, Vol 312, Num 19, pp 2683-2688, issn 0022-0248, 6 p.Article

Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substratesCHYURLIA, P. N; SEMOND, F; LESTER, T et al.Electronics letters. 2010, Vol 46, Num 3, pp 240-242, issn 0013-5194, 3 p.Article

Epitaxial growth of GdN on silicon substrate using an AIN buffer layerNATALI, F; PLANK, N. O. V; GALIPAUD, J et al.Journal of crystal growth. 2010, Vol 312, Num 24, pp 3583-3587, issn 0022-0248, 5 p.Article

Optical investigations of bulk and multi-quantum well nitride-based microcavitiesREVERET, F; MEDARD, F; DISSEIX, P et al.Optical materials (Amsterdam). 2009, Vol 31, Num 3, pp 505-509, issn 0925-3467, 5 p.Conference Paper

Epitaxy of AlN and GaN thin films on silicon or sapphire for the development of high frequency SAW devicesSEMOND, F; SCHENCK, D; JIBARD, M et al.Annales de chimie (Paris. 1914). 2001, Vol 26, Num 1, pp 177-182, issn 0151-9107Article

Potentialities of GaN-based microcavities grown on silicon substratesANTOINE-VINCENT, N; NATALI, F; SEMOND, F et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 2, pp 519-522, issn 0031-8965Conference Paper

Recombination dynamics in GaN/AlGaN quantum wells: The role of built-in fieldsALDERIGHI, D; VINATTIERI, A; MASSIES, J et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 2, pp 851-855, issn 0031-8965Conference Paper

Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductorsNEU, G; TEISSEIRE, M; LEMASSON, P et al.Physica. B, Condensed matter. 2001, Vol 302-03, pp 39-53, issn 0921-4526Conference Paper

Growth by molecular beam epitaxy and optical properties of a Ten-period AlGan/AlN distributed Bragg reflector on (111)SiSEMOND, F; ANTOINE-VINCENT, N; SCHNELL, N et al.Physica status solidi. A. Applied research. 2001, Vol 183, Num 1, pp 163-167, issn 0031-8965Conference Paper

Imaging and counting threading dislocations in c-oriented epitaxial GaN layersKHOURY, M; COURVILLE, A; VENNEGUES, P et al.Semiconductor science and technology. 2013, Vol 28, Num 3, issn 0268-1242, 035006.1-035006.8Article

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