Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (1 1 3)A substrateSAIDI, F; BOUZAÏENE, L; SFAXI, L et al.Journal of luminescence. 2012, Vol 132, Num 2, pp 289-292, issn 0022-2313, 4 p.Article

A novel AlGaAs/GaAs heterojunction-based Hall sensor designed for low magnetic field measurementsSGHAIER, H; BOUZAÏENE, L; SFAXI, L et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 6, pp 1306-1311, issn 0370-1972, 6 p.Article

GaAs substrate orientation dependence of resonant quasi-level lifetime in 2D-2D InGaAs/GaAs resonant tunneling devicesBOUZAÏENE, L; IMBAREK, N; SFAXI, L et al.Microelectronics journal. 2006, Vol 37, Num 9, pp 892-896, issn 0959-8324, 5 p.Article

Investigation of porous GaAs layers formed on n⁺-type GaAs by electrochemical anodization in HF solutionBEJI, L; SFAXI, L; BENOUADA, H et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 1, pp 65-71, issn 0031-8965, 7 p.Article

Self-organized InAs/GaAs quantum dots multilayers with growth interruption emitting at 1.3 μmBOUZAÏENE, L; SFAXI, L; MAAREF, H et al.Microelectronics journal. 2004, Vol 35, Num 11, pp 897-900, issn 0959-8324, 4 p.Article

Temperature range for re-emission of carriers in GaAs/Ga_1-xAl_xAs superlatticesKRAIEM, S; HASSEN, F; SFAXI, L et al.Microelectronics journal. 1999, Vol 30, Num 7, pp 685-688, issn 0959-8324Article

Optical investigation of InGaAs-capped InAs quantum dots : Impact of the strain-driven phase separation and dependence upon post-growth thermal treatmentILAHI, B; SFAXI, L; MAAREF, H et al.Journal of luminescence. 2007, Vol 127, Num 2, pp 741-746, issn 0022-2313, 6 p.Article

Effect of growth temperature on InAs wetting layer grown on (11 3)A GaAs by molecular beam epitaxySFAXI, L; BOUZAIENE, L; SGHAIER, H et al.Journal of crystal growth. 2006, Vol 293, Num 2, pp 330-334, issn 0022-0248, 5 p.Article

Investigation of two-dimensional electron gas concentration in selectively doped n-Al_xGa_1-xAs/In_yGa_1-yAs/GaAs heterostructuresBOUZAÏENE, L; SFAXI, L; MAAREF, H et al.Microelectronics journal. 1999, Vol 30, Num 7, pp 705-709, issn 0959-8324Article

GaAs(111)A/B surface orientation effects on electron density in normal and inverted pseudomorphic HEMTsREKAYA, S; BOUZAÏENE, L; SFAXI, L et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 1, pp 79-85, issn 0947-8396, 7 p.Article

Influence of high-index GaAs substrates on the 2D electron density of δ-doped phemt with an additional In_xGa_1-xAs (x > 0.15) thin layer embedded in the channelBOUZAÏENE, L; REKAYA, S; SFAXI, L et al.EPJ. Applied physics (Print). 2005, Vol 29, Num 3, pp 209-213, issn 1286-0042, 5 p.Article

Enhanced electron density in two Si δ-doped Al_0.33Ga_0.67As/GaAs heterojunctionsSFAXI, L; BOUZAÏENE, L; MAAREF, H et al.Microelectronics journal. 1999, Vol 30, Num 8, pp 769-772, issn 0959-8324Article

Piezoelectric field effects on electron density in a δ-doped AlGaAs/In_yGa_1-yAs/GaAs pseudomorphic hemtBOUZAÏENE, L; REKAYA, S; SGHAIER, H et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 2, pp 295-299, issn 0947-8396, 5 p.Article

Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlatticesILAHI, B; SFAXI, L; HASSEN, F et al.Physica status solidi. A. Applied research. 2003, Vol 199, Num 3, pp 457-463, issn 0031-8965, 7 p.Article

A novel selectively 6-doped AlGaAs/(In, Ga, As)/GaAs pseudomorphic heterostructureBOUZAÏENE, L; SFAXI, L; SGHAEÏR, H et al.Optical materials (Amsterdam). 2001, Vol 17, Num 1-2, pp 299-303, issn 0925-3467Conference Paper

Hydrostatic pressure and temperature effects on nonlinear optical rectification in a lens shape InAs/GaAs quantum dotBOUZAÏENE, L; BEN MAHRSIA, R; BAIRA, M et al.Journal of luminescence. 2013, Vol 135, pp 271-275, issn 0022-2313, 5 p.Article

Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substratesREKAYA, S; SFAXI, L; BRU-CHEVALLIER, C et al.Journal of luminescence. 2011, Vol 131, Num 1, pp 7-11, issn 0022-2313, 5 p.Article

Growth of n-GaAs layer on a rough surface of p-Si substrate by molecular beam epitaxy (MBE) for photovoltaic applicationsAZEZA, B; SFAXI, L; M'GHAIETH, R et al.Journal of crystal growth. 2011, Vol 317, Num 1, pp 104-109, issn 0022-0248, 6 p.Article

Comprehensive investigation of optical and electronic properties of tunable InAs QDs optically active at O-band telecommunication window with (In)GaAs surrounding materialNASR, O; HADJ ALOUANE, M. H; MAAREF, H et al.Journal of luminescence. 2014, Vol 148, pp 243-248, issn 0022-2313, 6 p.Article

Postgrowth intermixing of strain engineered InAs/GaAs quantum dotsNASR, O; HADJ ALOUANE, M. H; ILAHI, B et al.Journal of alloys and compounds. 2014, Vol 615, pp 683-686, issn 0925-8388, 4 p.Article

Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In_0.4Ga_0.6As/GaAs hetero-capping layerILAHI, B; SFAXI, L; HASSEN, F et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 4, pp 813-816, issn 0947-8396, 4 p.Article

Visible photoluminescence in porous GaAs capped by GaAsBEJI, L; SFAXI, L; ISMAIL, B et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 25, Num 4, pp 636-642, issn 1386-9477, 7 p.Article

Effects of growth conditions on the formation of self-assembled InAs quantum dots grown on (1 1 5)A GaAs substrateBENNOUR, M; SAIDI, F; BOUZAIENE, L et al.Physica. E, low-dimentional systems and nanostructures. 2013, Vol 50, pp 83-87, issn 1386-9477, 5 p.Article

Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs(001) quantum dotsILAHI, B; SFAXI, L; BREMOND, G et al.EPJ. Applied physics (Print). 2005, Vol 30, Num 2, pp 101-105, issn 1286-0042, 5 p.Article

Electron confinement in planar-doped heterostructures Al_xGa_1-As:δSi/GaAsALOULOU, S; AJLANI, H; MEFTAH, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 96, Num 1, pp 14-18, issn 0921-5107, 5 p.Article