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Effect of various factors upon the stoichiometry of GaAs homoepitaxial layers grown by LPEGOVORKOV, A. V; NOVIKOV, A. G; MILVIDSKII, M. G et al.Physica status solidi. A. Applied research. 1994, Vol 144, Num 1, pp 121-130, issn 0031-8965Article

Defect formation in the active region of heteroepitaxial compositions GaAlAs/GaAs for solar cells, during sign-changing thermal actionsKALININ, A. A; MIL'VIDSKII, M. G; NULLER, T. A et al.Soviet physics. Crystallography. 1991, Vol 36, Num 3, pp 418-422, issn 0038-5638Article

Effect of doping and heat treatment on the lattice constant in homoepitaxial GaAs layers prepared by LPEGOVORKOV, A. V; EFIMOV, A. G; NOVIKOV, A. G et al.Soviet physics. Crystallography. 1991, Vol 36, Num 6, pp 875-877, issn 0038-5638Article