130-nm partially depleted SOI MOSFET nonlinear model including the kink effect for linearity properties investigationSILIGARIS, Alexandre; DAMBRINE, Gilles; SCHREURS, Dominique et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 12, pp 2809-2812, issn 0018-9383, 4 p.Article

A new empirical nonlinear model for sub-250 nm channel MOSFETSILIGARIS, Alexandre; DAMBRINE, Gilles; SCHREURS, Dominique et al.IEEE microwave and wireless components letters. 2003, Vol 13, Num 10, pp 449-451, issn 1531-1309, 3 p.Article

Hybrid On-Chip/In-Package Integrated Antennas for Millimeter-Wave Short-Range CommunicationsZEVALLOS LUNA, José A; DUSSOPT, Laurent; SILIGARIS, Alexandre et al.IEEE transactions on antennas and propagation. 2013, Vol 61, Num 11, pp 5377-5384, issn 0018-926X, 8 p.Article

Active properties of carbon nanotube field-effect transistors deduced from S parameters measurementsBETHOUX, Jean-Marc; HAPPY, Henri; SILIGARIS, Alexandre et al.IEEE transactions on nanotechnology. 2006, Vol 5, Num 4, pp 335-342, issn 1536-125X, 8 p.Article

THz Imaging with Low-cost 130 nm CMOS TransistorsSCHUSTER, Franz; SAKOWICZ, Maciej; KNAP, Wojciech et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7837, issn 0277-786X, isbn 978-0-8194-8355-3, 783704.1-783704.7Conference Paper

Performance Improvement Versus CPW and Loss Distribution Analysis of Slow-Wave CPW in 65 nm HR-SOI CMOS TechnologyTANG, Xiao-Lan; FRANC, Anne-Laure; PISTONO, Emmanuel et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 5, pp 1279-1285, issn 0018-9383, 7 p.Article

A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD ApplicationsSILIGARIS, Alexandre; RICHARD, Olivier; PILARD, Romain et al.IEEE journal of solid-state circuits. 2011, Vol 46, Num 12, pp 3005-3017, issn 0018-9200, 13 p.Conference Paper

High-frequency and noise performances of 65-nm MOSFET at liquid nitrogen temperatureSILIGARIS, Alexandre; PAILLONCY, Guillaume; DELCOURT, Sébastien et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 8, pp 1902-1908, issn 0018-9383, 7 p.Article

High frequency noise of SOI MOSFETs : Performances and limitationsDANNEVILLE, Francois; PAILLONCY, Guillaume; SILIGARIS, Alexandre et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 185-199, issn 0277-786X, isbn 0-8194-5839-2, 1Vol, 15 p.Conference Paper