The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductorRODRIGUES, S. C. P; ARAUJO, Y. R. V; SIPAHI, G. M et al.Applied surface science. 2008, Vol 255, Num 3, pp 709-711, issn 0169-4332, 3 p.Conference Paper

Magneto-quantum oscillations of the Korringa relaxation rate of manganese ion near a two-dimensional electron gasSOUTO, E; NUNES, O. A. C; AGRELLO, D. A et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 1041-1044, issn 0959-8324, 4 p.Conference Paper

Structural and optical properties of CaOMEDEIROS, S. K; ALBUQUERQUE, E. L; MAIA, F. F et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 1058-1061, issn 0959-8324, 4 p.Conference Paper

Variational results for electron mobility in modulation-doped In_0.53Ga_0.47As/InP single symmetric quantum wellsLIMA, F. M. S; VELOSO, A. B; FONSECA, A. L. A et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 1016-1019, issn 0959-8324, 4 p.Conference Paper

Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wellsRODRIGUES, S. C. P; SIPAHI, G. M.Journal of crystal growth. 2002, Vol 246, Num 3-4, pp 347-354, issn 0022-0248, 8 p.Conference Paper

4^th Workshop of Semiconductor Nanodevices and Nanostructured Materials (NanoSemiMat-4)DA SILVA, E. F; HENINI, M; SCOLFARO, L. M. R et al.Microelectronics journal. 2005, Vol 36, Num 11, issn 0959-8324, 124 p.Conference Proceedings

Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wellsD'EURYDICE, M. N; SIPAHI, G. M; RODRIGUES, S. C. P et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 1029-1033, issn 0959-8324, 5 p.Conference Paper

Spin-flip relaxation due to phonon macroscopic deformation potential in quantum dotsALCALDE, A. M; DINIZ NETO, O. O; MARQUES, G. E et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 1034-1037, issn 0959-8324, 4 p.Conference Paper

Statistical analysis of topographic images of nanoporous silicon and model surfacesDA SILVA, J. B; DE VASCONCELOS, E. A; DOS SANTOS, B. E. C. A et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 1011-1015, issn 0959-8324, 5 p.Conference Paper

Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructuresRODRIGUES, S. C. P; SIPAHI, G. M; SCOLFARO, L. M. R et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 23, pp 5813-5827, issn 0953-8984Article

Inter- and intraband transitions in cubic nitride quantum wellsRODRIGUES, S. C. P; SIPAHI, G. M; SCOLFARO, L. M. R et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 121-127, issn 0031-8965Conference Paper

Optical characterization of cubic AlGaN/GaN Quantum wellsKOHLER, U; AS, D. J; SIPAHI, G. M et al.Physica status solidi. A. Applied research. 2002, Vol 192, Num 1, pp 129-134, issn 0031-8965Conference Paper

Atomic scale engineering of nanostructures at silicon carbide surfacesSOUKIASSIAN, Patrick; DERYCKE, Vincent; SEMOND, Fabrice et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 969-976, issn 0959-8324, 8 p.Conference Paper

Ab initio calculation of the structural and electronic properties of the SiC (100) surfacesSOARES, J. S; ALVES, H. W.Microelectronics journal. 2005, Vol 36, Num 11, pp 998-1001, issn 0959-8324, 4 p.Conference Paper

Li-inserted carbon nanotube Raman scatteringLEMOS, V; GUERINI, S; LALA, S. M et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 1020-1022, issn 0959-8324, 3 p.Conference Paper

Electronic properties of interacting quantum dotsAPEL, V. M; ANDA, E. V; DAVIDOVICH, Maria A et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 1052-1054, issn 0959-8324, 3 p.Conference Paper

Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wellsRODRIGUES, S. C. P; SIPAHI, G. M; SCOLFARO, L. M. R et al.Physica. B, Condensed matter. 2001, Vol 302-03, pp 106-113, issn 0921-4526Conference Paper

Parameters of the Kane model from effective masses : Ambiguities and instabilitiesENDERLEIN, R; SIPAHI, G. M; SCOLFARO, L. M. R et al.Physica status solidi. B. Basic research. 1998, Vol 206, Num 2, pp 623-633, issn 0370-1972Article

Comparative studies of photoluminescence from n and p δ doping wells in GaAsENDERLEIN, R; SIPAHI, G. M; SCOLFARO, L. M. R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 396-400, issn 0921-5107Conference Paper

Controlling the charge and the spin polarization distributions in (In, Ga, Mn)as-based diluted magnetic semiconductor multilayered structuresDA CUNHA LIMA, I. C; RODRIGUES, S. C. P; SIPAHI, G. M et al.Journal of superconductivity. 2005, Vol 18, Num 1, pp 61-67, issn 0896-1107, 7 p.Conference Paper

Efficient silicon based light emittersHELM, M; SUN, J. M; POTFAJOVA, J et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 957-962, issn 0959-8324, 6 p.Conference Paper

Cubic InGaN/GaN multi-quantum wells and AlGaN/GaN distributed bragg reflectors for application in resonant cavity LEDsSHUNFENG LI; SCHÖRMANN, J; PAWLIS, A et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 963-968, issn 0959-8324, 6 p.Conference Paper

Fine tuning of the emission of ultra-thin quantum wells of CdSe and CdTe by modification of the growth temperatureHERNANDEZ-CALDERON, I; SALCEDO-REYES, J. C; ALFARO-MARTINEZ, A et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 985-988, issn 0959-8324, 4 p.Conference Paper

Design and development of two-dimensional position sensitive photo-detectorDA SILVA, R. C. G; BOUDINOV, H; CORREIA, R. R. B et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 1023-1025, issn 0959-8324, 3 p.Conference Paper

Solid and soft nanostructured materials : Fundamentals and applicationsWILLANDER, M; NUR, O; LOZOVIK, Yu. E et al.Microelectronics journal. 2005, Vol 36, Num 11, pp 940-949, issn 0959-8324, 10 p.Conference Paper