2012 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K.Journal of electronic materials. 2013, Vol 42, Num 11, issn 0361-5235, 372 p.Conference Proceedings

2013 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K.Journal of electronic materials. 2014, Vol 43, Num 8, issn 0361-5235, 310 p.Conference Proceedings

Local reconstruction of a function from a non-uniform sampled dataRADHA, R; SIVANANTHAN, S.Applied numerical mathematics. 2009, Vol 59, Num 2, pp 393-403, issn 0168-9274, 11 p.Article

A meta-learning approach to the regularized learning—Case study: Blood glucose predictionNAUMOVA, V; PEREVERZYEV, S. V; SIVANANTHAN, S et al.Neural networks. 2012, Vol 33, pp 181-193, issn 0893-6080, 13 p.Article

2006 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K.Journal of electronic materials. 2007, Vol 36, Num 8, issn 0361-5235, 292 p.Conference Proceedings

2004 U.S. workshop on the physics and chemistry of II-VI materialsSIVANANTHAN, S; DHAR, N. K.Journal of electronic materials. 2005, Vol 34, Num 6, pp 681-968, issn 0361-5235, 288 p.Conference Proceedings

2010 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K; ANTER, Y et al.Journal of electronic materials. 2011, Vol 40, Num 8, issn 0361-5235, 256 p.Conference Proceedings

2009 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K; ANTER, Y et al.Journal of electronic materials. 2010, Vol 39, Num 7, issn 0361-5235, 295 p.Conference Proceedings

2002 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K.Journal of electronic materials. 2003, Vol 32, Num 7, issn 0361-5235, 240 p.Conference Proceedings

Extrapolation in variable RKHSs with application to the blood glucose readingNAUMOVA, V; PEREVERZYEV, S. V; SIVANANTHAN, S et al.Inverse problems. 2011, Vol 27, Num 7, issn 0266-5611, 075010.1-075010.13Article

Got NGF? Promising gene therapy results in Alzheimer's diseaseSIVANANTHAN, S. N; LEAVITT, B. R.Clinical genetics. 2005, Vol 68, Num 3, pp 194-196, issn 0009-9163, 3 p.Article

Growth of Te on As-exposed Si(211) : Electronic structure calculationsGUPTA, Bikash C; BATRA, Inder P; SIVANANTHAN, S et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 7, pp 075328.1-075328.8, issn 1098-0121Article

Atomic-Scale Characterization of II―VI Compound SemiconductorsSMITH, David J.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3168-3174, issn 0361-5235, 7 p.Conference Paper

2007 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; ANTER, Y; DHAR, N. K et al.Journal of electronic materials. 2008, Vol 37, Num 9, issn 0361-5235, 347 p.Conference Proceedings

Hg_1-xMn_x Te-CdTe superlattices grown by molecular beam epitaxyCHU, X; SIVANANTHAN, S; FAURIE, J. P et al.Applied physics letters. 1987, Vol 50, Num 10, pp 597-599, issn 0003-6951Article

In-situ ellipsometry studies of adsorption of Hg on CdTe(211)B/Si(211) and molecular beam epitaxy growth of hgcdte(211)BBADANO, G; CHANG, Y; GARLAND, J. W et al.Journal of electronic materials. 2004, Vol 33, Num 6, pp 583-589, issn 0361-5235, 7 p.Conference Paper

Selective-Area Epitaxy of CdTe on CdTe/ZnTe/Si(21 1) Through a Nanopatterned Silicon Nitride MaskFAHEY, S; BOMMENA, R; KODAMA, R et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2899-2907, issn 0361-5235, 9 p.Conference Paper

MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA IndustryAQARIDEN, F; ELSWORTH, J; ZHAO, J et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2700-2706, issn 0361-5235, 7 p.Conference Paper

Al-and Al:In-Doped ZnO Thin Films Deposited by RF Magnetron Sputtering for Spacecraft Charge MitigationLENNON, C; KODAMA, R; CHANG, Y et al.Journal of electronic materials. 2008, Vol 37, Num 9, pp 1324-1328, issn 0361-5235, 5 p.Conference Paper

Mid-Wavelength Infrared nBn for HOT DetectorsROGALSKI, A; MARTYNIUK, P.Journal of electronic materials. 2014, Vol 43, Num 8, pp 2963-2969, issn 0361-5235, 7 p.Conference Paper

ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopyWANG, X. J; TARI, S; SPORKEN, R et al.Applied surface science. 2011, Vol 257, Num 8, pp 3346-3349, issn 0169-4332, 4 p.Article

HgCdTe: Recent Trends in the Ultimate IR SemiconductorKINCH, Michael A.Journal of electronic materials. 2010, Vol 39, Num 7, pp 1043-1052, issn 0361-5235, 10 p.Conference Paper

Characteristics of MBE-grown heterostructure HgCdTe/CdTe/Si materials and planar photovoltaic devicesASHOKAN, R; SIVANANTHAN, S.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 67, Num 1-2, pp 88-94, issn 0921-5107Conference Paper

Molecular beam epitaxial growth and characterization of 2-in.-diam Hg_1-xCd_xTe films on GaAs (100) substratesLANGE, M. D; SIVANANTHAN, S; CHU, X et al.Applied physics letters. 1988, Vol 52, Num 12, pp 978-980, issn 0003-6951Article

Molecular beam epitaxial growth of a novel strained layer type III superlattice system: HgTe-ZnTeFAURIE, J. P; SIVANANTHAN, S; CHU, X et al.Applied physics letters. 1986, Vol 48, Num 12, pp 785-787, issn 0003-6951Article