Proceedings of the European Materials Research Society 2001-Symposium F Amorphous and Crystalline Silicon Carbide: Material and ApplicationsCALCAGNO, Lucia; HALLEN, Anders; MARTINS, Rodrigo et al.Applied surface science. 2001, Vol 184, Num 1-4, issn 0169-4332, 516 p.Conference Proceedings

Characterization of Structural Changes Associated with Doping Silicon Nanowires by Ion ImplantationDAS KANUNGO, Pratyush; KOEGLER, Reinhard; ZAKHAROV, Nikolai et al.Crystal growth & design. 2011, Vol 11, Num 7, pp 2690-2694, issn 1528-7483, 5 p.Article

Correlations between properties and applications of the CVD amorphous silicon carbide filmsKLEPS, Irina; ANGELESCU, Anca.Applied surface science. 2001, Vol 184, Num 1-4, pp 107-112, issn 0169-4332Conference Paper

Laser crystallization of amorphous SiC thin films on glassURBAN, S; FALK, F.Applied surface science. 2001, Vol 184, Num 1-4, pp 356-361, issn 0169-4332Conference Paper

Amorphous silicon-carbon alloys: a promising but complex and very diversified series of materialsSOLOMON, I.Applied surface science. 2001, Vol 184, Num 1-4, pp 3-7, issn 0169-4332Conference Paper

Silicon carbide: from amorphous to crystalline materialFOTI, G.Applied surface science. 2001, Vol 184, Num 1-4, pp 20-26, issn 0169-4332Conference Paper

C adsorption and diffusion at the Si(0 0 1) surface: implications for SiC growthCICERO, Giancarlo; CATELLANI, Alessandra.Applied surface science. 2001, Vol 184, Num 1-4, pp 113-117, issn 0169-4332Conference Paper

A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperaturesCAPANO, M. A.Applied surface science. 2001, Vol 184, Num 1-4, pp 317-322, issn 0169-4332Conference Paper

Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance MicroscopyXIN OU; DAS KANUNGO, Pratyush; KÖGLER, Reinhard et al.Nano letters (Print). 2010, Vol 10, Num 1, pp 171-175, issn 1530-6984, 5 p.Article

Writing cobalt FIB implantation into 6H:SiCBISCHOFF, L; TEICHERT, J.Applied surface science. 2001, Vol 184, Num 1-4, pp 336-339, issn 0169-4332Conference Paper

Contact formation in SiC devicesPECZ, B.Applied surface science. 2001, Vol 184, Num 1-4, pp 287-294, issn 0169-4332Conference Paper

Peculiarities of preparing a-SiC:H films from methyltrichlorosilaneRUSAKOV, G. V; IVASHCHENKO, L. A; IVASHCHENKO, V. I et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 128-134, issn 0169-4332Conference Paper

Non-Rutherford backscattering studies of SiC/SIMOX structuresCHEN, K. W; YU, Y. H; ZOU, S. C et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 178-182, issn 0169-4332Conference Paper

Particle and light-induced luminescence degradation in a-SiC:HREITANO, R; BAERI, A; MUSUMECI, P et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 190-193, issn 0169-4332Conference Paper

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H-SiCHJELM, Mats; BERTILSSON, Kent; NILSSON, Hans-Erik et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 194-198, issn 0169-4332Conference Paper

Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layersABERG, D; HALLEN, A; PELLEGRINO, P et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 263-267, issn 0169-4332Conference Paper

Influence of ion implantation on the quality of 4H-SiC CVD epitaxial layersKALININA, E; KHOLUJANOV, G; IVANNIKOV, P et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 323-329, issn 0169-4332Conference Paper

Investigation of Al-implanted 6H- and 4H-SiC layers after fast heating rate annealingsOTTAVIANI, L; LAZAR, M; LOCATELLI, M. L et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 330-335, issn 0169-4332Conference Paper

Focused ion beam sputtering investigations on SiCBISCHOFF, L; TEICHERT, J; HEERA, V et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 372-376, issn 0169-4332Conference Paper

Experimental characterization of a 4H-SiC high voltage current limiting deviceNALLET, F; PLANSON, D; GODIGNON, P et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 404-407, issn 0169-4332Conference Paper

Investigation of 4H-SiC Schottky diodes by ion beam induced charge (IBIC) techniqueMANFREDOTTI, C; FIZZOTTI, F; GIUDICE, A. Lo et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 448-454, issn 0169-4332Conference Paper

Silicon carbide photodiodes: Schottky and PINIP structuresCABRITA, A; PEREIRA, L; BRIDA, D et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 437-442, issn 0169-4332Conference Paper

Triode structure of ion detector based on 6H-SiC epitaxial filmsSTROKAN, N. B; IVANOV, A. M; DAVYDOV, D. V et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 455-459, issn 0169-4332Conference Paper

Vacancy-related defects in ion-beam and electron irradiated 6H-SiCBRATUS', V. Ya; PETRENKO, T. T; VON BARDELEBEN, H. J et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 229-236, issn 0169-4332Conference Paper

Mass spectroscopy analysis during the deposition of a-SiC:H and a-C:H films produced by hot wire and hot wire plasma-assisted techniquesFERREIRA, I; SILVA, V; AGUAS, H et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 60-65, issn 0169-4332Conference Paper