Silicon doping by erbium to create light-emitting structuresSOBOLEV, N. A.Microelectronics journal. 1995, Vol 26, Num 7, pp 725-735, issn 0959-8324Article

Characterization of structural, electrical and optical properties of rare-earth doped Si-based light emitting diodesSOBOLEV, N. A.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 189-191, issn 0921-5107Conference Paper

Analyse statistique temporelle des processus de génération d'impulsions dans les microplasmas sous haute tensionKONDRAT'EV, B. S; SOBOLEV, N. A.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 1, pp 133-136, issn 0015-3222Article

Gamma-ray diffraction in the study of siliconKURBAKOV, A. I; SOBOLEV, N. A.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 22, Num 2-3, pp 149-158, issn 0921-5107Article

Defects and their influence on the luminescence of rare-earth ions implanted in single crystal SiSOBOLEV, N. A.Physica. B, Condensed matter. 2001, Vol 308-10, pp 333-336, issn 0921-4526Conference Paper

The electronic structure and magnetic properties of transition metal-doped silicon carbideSHAPOSHNIKOV, V. L; SOBOLEV, N. A.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 10, pp 1761-1768, issn 0953-8984, 8 p.Article

Mechanisms of manganese-assisted non-radiative recombination in Cd(Mn)Se/Zn(Mn)Se quantum dotsCHERNENKO, A. V; BRICHKIN, A. S; SOBOLEV, N. A et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 35, issn 0953-8984, 355306.1-355306.13Article

Ferromagnetic resonance and hall effect characterization of GaMnSb layersSOBOLEV, N. A; OLIVEIRA, M. A; RUBINGER, R. M et al.Journal of superconductivity and novel magnetism. 2007, Vol 20, Num 6, pp 399-403, issn 1557-1939, 5 p.Conference Paper

Point and extended defects engineering as a key to advancing the technology of light-emitting diodes based on single-crystal Si and SiGe layersSOBOLEV, N. A.Physica. B, Condensed matter. 2007, Vol 401-02, pp 10-15, issn 0921-4526, 6 p.Conference Paper

Correlation between defect structure and luminescence spectra in monocrystalline erbium-implanted siliconSOBOLEV, N. A; EMEL'YANOV, A. M; SHEK, E. I et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 13241-13246, issn 0953-8984, 6 p.Conference Paper

Excitation cross-section and lifetime of the excited state of erbium ions in avalanching light-emitting Si : Er : O diodesSOBOLEV, N. A; NIKOLAEV, Yu. A; EMEL'YANOV, A. M et al.Journal of luminescence. 1998, Vol 80, Num 1-4, pp 315-319, issn 0022-2313Conference Paper

Characterization of vacancy-related defects introduced into silicon during heat treatment by deep-level transient spectroscopy and gamma-ray diffraction techniquesSOBOLEV, N. A; SHEK, E. I; KURBAKOV, A. I et al.Applied physics. A, Materials science & processing (Print). 1996, Vol 62, Num 3, pp 259-262, issn 0947-8396Article

Photoluminescence measurements on erbium-doped siliconDE MAAT-GERSDORF, I; GREGORKIEWICZ, T; AMMERLAAN, C. A et al.Semiconductor science and technology. 1995, Vol 10, Num 5, pp 666-671, issn 0268-1242Article

Effet du dopage nucléaire sur la formation des défauts d'irradiation dans Si <Ge>VOEVODOVA, A. V; KORSHUNOV, F. P; SOBOLEV, N. A et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 7, pp 1173-1176, issn 0015-3222Article

Photoluminescence limite des cristaux InP de type n, irradiés par des électrons avec une énergie de 3,5÷4 MeVKORSHUNOV, F. P; RADAUTSAN, S. I; SOBOLEV, N. A et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 9, pp 1581-1583, issn 0015-3222Article

Enhanced ferroelectric, magnetic and magnetoelectric properties of Bi_1―xCa_xFe_1―xTi_xO₃ solid solutionsKARPINSKY, D. V; TROYANCHUK, I. O; VIDAL, J. V et al.Solid state communications. 2011, Vol 151, Num 7, pp 536-540, issn 0038-1098, 5 p.Article

Room temperature paramagnetism of ZnO:Mn films grown by RF-sputteringOLIVEIRA, F; CERQUEIRA, M. F; VASILEVSKIY, M. I et al.Thin solid films. 2010, Vol 518, Num 16, pp 4612-4614, issn 0040-6090, 3 p.Conference Paper

Influence of the ambient atmosphere on the diffusion of aluminum in siliconGRESSEROV, B. N; SOBOLEV, N. A; VYZHIGIN, Y. V et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 5, pp 488-491, issn 0038-5700Article

Formation of positron-sensitive defects during heat treatment of silicon in an atmosphere containing chlorineARUTYUNOV, N. YU; SOBOLEV, N. A; TRASHCHAKOV, V. YU et al.Soviet physics. Semiconductors. 1990, Vol 24, Num 10, pp 1112-1114, issn 0038-5700Article

Niveaux énergétiques dans CuInS2, en lien avec les défauts intrinsèquesAKSENOV, I. A; KORZUN, B. V; MAKOVETSKAYA, L. A et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 9, pp 1696-1699, issn 0015-3222Article

Recuit par impulsion du silicium dopé par réaction nucléaireKORSHUNOV, F. P; SOBOLEV, N. A; SHERAUKHOV, V. A et al.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 11, pp 1968-1973, issn 0015-3222Article

Elimination des défauts swirl lors du traitement thermique des pastilles de silicium dans une atmosphère contenant du chloreSOBOLEV, N. A; SHEK, E. I; DUBAVSKIJ, S. I et al.Žurnal tehničeskoj fiziki. 1985, Vol 55, Num 7, pp 1457-1459, issn 0044-4642Article

Room temperature structure and multiferroic properties in Bi_0.7La_0.3FeO₃ ceramicsCARVALHO, T. T; FERNANDES, J. R. A; TAVARES, P. B et al.Journal of alloys and compounds. 2013, Vol 554, pp 97-103, issn 0925-8388, 7 p.Article

Oxygen diffusion in Si1―xGex alloysKHIRUNENKO, L. I; POMOZOV, Yu. V; SOSNIN, M. G et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4698-4700, issn 0921-4526, 3 p.Conference Paper

Crystal lattice defects in MBE grown Si layers highly doped with ErZAKHAROV, N. D; WERNER, P; VDOVIN, V. I et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 2, pp 282-288, issn 1862-6300, 7 p.Article