33rd Electronic materials conference, Boulder, CO, June 19-21, 1991SPRINGTHORPE, A. J.Journal of electronic materials. 1992, Vol 21, Num 2, pp 135-198, issn 0361-5235Conference Proceedings

Effects of S, Si, or Fe dopants on the diffusion of Zn in InP during MOCVD : 33rd Electronic materials conference, Boulder, CO, June 19-21, 1991BLAAUW, C; EMMERSTORFER, B; KRELLER, D et al.Journal of electronic materials. 1992, Vol 21, Num 2, pp 173-179, issn 0361-5235Conference Paper

Localized-capture-state model for the capture kinetics of the DX center in Al_xGa_1-xAsLEITH, G. A; ZUKOTYNSKI, S; SPRINGTHORPE, A. J et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 7, pp 3340-3343, issn 0163-1829Article

Tunneling of photoexcited holes through a double-barrier resonant tunneling structure observed by time-resolved photoluminescenceCHARBONNEAU, S; YOUNG, J. F; SPRINGTHORPE, A. J et al.Applied physics letters. 1990, Vol 57, Num 3, pp 264-266, issn 0003-6951Article

Arsenic pressure variations during oxide desorption from gallium arsenide prior to epitaxial depositionSPRINGTHORPE, A. J; MAJEED, A; PRIEST, A. D et al.Applied physics letters. 1991, Vol 59, Num 16, pp 1981-1983, issn 0003-6951Article

High performance of induced-channel heterojunction field-effect transistor (HFET)MAND, R. S; EICHER, S; SPRINGTHORPE, A. J et al.Electronics Letters. 1989, Vol 25, Num 6, pp 386-387, issn 0013-5194, 2 p.Article

Cadmium doping of InP grown by MOCDVBLAAUW, C; EMMERSTORFER, B; SPRINGTHORPE, A. J et al.Journal of crystal growth. 1987, Vol 84, Num 3, pp 431-435, issn 0022-0248Article

Evidence for neutral charge state model of the DX center from low temperature Hall mobility measurementsLEITH, G. A; ZUKOTYNSKI; SPRINGTHORPE, A. J et al.Applied physics letters. 1992, Vol 60, Num 20, pp 2517-2519, issn 0003-6951Article

Conducting polyheterocycle composites based on porous hostsPARK, J. S; RUCKENSTEIN, E.Journal of electronic materials. 1992, Vol 21, Num 2, pp 205-215, issn 0361-5235Conference Paper

Tunnelling of optically-generated holes in a double barrier resonant tunnelling structureCHARBONNEAU, S; YOUNG, J. F; SPRINGTHORPE, A. J et al.Solid state communications. 1990, Vol 74, Num 9, pp 929-934, issn 0038-1098, 6 p.Article

The inverted horizontal reactor: growth of uniform InP and GaInAs by LPMOCVDPUETZ, N; HILLIER, G; SPRINGTHORPE, A. J et al.Journal of electronic materials. 1988, Vol 17, Num 5, pp 381-386, issn 0361-5235Article

Growth of GaAs_1-xP_x/GaAs and InAs_xP_1-x/InP strained quantum wells for optoelectronic devices by gas-source molecular beam epitaxy : 33rd Electronic materials conference, Boulder, CO, June 19-21, 1991HOU, H. Q; TU, C. W.Journal of electronic materials. 1992, Vol 21, Num 2, pp 137-141, issn 0361-5235Conference Paper

LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIPCOHEN, N; GARDI, R; SARUSI, G et al.Infrared physics & technology. 2007, Vol 50, Num 2-3, pp 253-259, issn 1350-4495, 7 p.Conference Paper

Compositional control in molecular beam epitaxy growth of GaN_yAs_1-y on GaAs (001) using an Ar/N₂ RF plasmaGUPTA, J. A; WASILEWSKI, Z. R; SPRINGTHORPE, A. J et al.Journal of crystal growth. 2002, Vol 242, Num 1-2, pp 141-154, issn 0022-0248Article

Iodine-assisted molecular beam epitaxyMICOVIC, M; LUBYSHEV, D; CAI, W. Z et al.Journal of crystal growth. 1997, Vol 175-76, pp 428-434, issn 0022-0248, 1Conference Paper

Observation of radiative and nonradiative tunneling in GaAs/Al_xGa_1-xAs heterojunction bipolar transistors with compositionally graded base-emitter heterojunctionsDE LYON, T. J; CASEY, H. C. JR; ENQUIST, P. M et al.Journal of applied physics. 1989, Vol 65, Num 8, pp 3282-3284, issn 0021-8979Article

Determination of charge accumulation and its characteristic time in double-barrier resonant tunneling structures using steady-state photoluminescenceYOUNG, J. E; WOOD, B. M; AERS, G. C et al.Physical review letters. 1988, Vol 60, Num 20, pp 2085-2088, issn 0031-9007Article

Self-timed integrated-optical serial-to-parallel converter for 100 Gbit/s time demultiplexingTAN, R. K; VERBER, C. M; SPRINGTHORPE, A. J et al.IEEE photonics technology letters. 1994, Vol 6, Num 10, pp 1228-1231, issn 1041-1135Article

Fabrication and properties of multialyer Sr_0.7Ba_0.3TiO₃ ceramic varistorsZHOU, L; JIANG, Z; YU, C et al.Journal of electronic materials. 1992, Vol 21, Num 2, pp 239-241, issn 0361-5235Conference Paper

Epitaxial layer thickness measurements by reflection spectroscopyTAROF, L. E; MINER, C. J; SPRINGTHORPE, A. J et al.Journal of electronic materials. 1989, Vol 18, Num 3, pp 361-367, issn 0361-5235, 7 p.Article

CVD-SiO₂ and plasma-SiN_x films as Zn diffusion masks for GaAsBLAAUW, C; SPRINGTHORPE, A. J; DZIOBA, S et al.Journal of electronic materials. 1984, Vol 13, Num 2, pp 251-262, issn 0361-5235Article

Optimization of MOCVD-diffused p-InP for planar avalanche photodiodesPITTS, O. J; HISKO, M; BENYON, W et al.Journal of crystal growth. 2014, Vol 393, pp 85-88, issn 0022-0248, 4 p.Conference Paper

Quantum dots for terahertz devicesLIU, H. C; ASLAN, B; GUPTA, J. A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 684011.1-684011.7, issn 0277-786X, isbn 978-0-8194-7015-7Conference Paper

Visible quantum dots under reversed biasYANG, F; AERS, G. C; HINZER, K et al.SPIE proceedings series. 1998, pp 260-264, isbn 0-8194-2950-3Conference Paper

Development and performance of a 40 Gbps WDM laser moduleCOPELAND, D. J; TABATABAEI, S. A; MERRITT, S. A et al.SPIE proceedings series. 1998, pp 54-63, isbn 0-8194-2667-9Conference Paper