Miniaturized e-beam writer: testing of componentsSTEBLER, C; DESPONT, M; STAUFER, U et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 155-158, issn 0167-9317Conference Paper

Micro- and nanoengineering 94LEHMANN, H. W; STAUFER, U; VETTINGER, P et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, issn 0167-9317, 577 p.Conference Proceedings

Wafer- and piece-wise Si tip transfer technologies for applications in scanning probe microscopyAKIYAMA, T; STAUFER, U; DE ROOIJ, N. F et al.Journal of microelectromechanical systems. 1999, Vol 8, Num 1, pp 65-70, issn 1057-7157Article

Secondary electron imaging by means of a microfabricated electron columnSTEBLER, C; DESPONT, M; STAUFER, U et al.Journal de physique. III (Print). 1996, Vol 6, Num 11, pp 1435-1439, issn 1155-4320Article

Microfabrication of lenses for a miniaturized electron columnDESPONT, M; STAUFER, U; STEBLER, C et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 467-470, issn 0167-9317Conference Paper

Micromachining by accelerated nanoparticle erosionGSPANN, J.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 517-520, issn 0167-9317Conference Paper

Neural networks application for fast, direct correction kernel generation for proximity effects correction in electron beam lithographyJEDRASIK, P.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 191-194, issn 0167-9317Conference Paper

Voltage contrast maps using the time-dispersive electron spectrometerDINNIS, A. R.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 523-526, issn 0167-9317Conference Paper

High stability measurement in the sub-half micron region based on new ESD technologyKITAMURA, T.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 535-538, issn 0167-9317Conference Paper

The influence of the substrate on proximity effect and exposure dose for the inorganic resist LiF(AlF₃)LANGHEINRICH, W.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 199-202, issn 0167-9317Conference Paper

Proceedings of the 28th International Conference on Micro- and Nano-Engineering, September 16-19, 2002, Lugano, SwitzerlandBRUGGER, J; GOBRECHT, J; ROTHUIZEN, H et al.Microelectronic engineering. 2003, Vol 67-68, issn 0167-9317, 1004 p.Conference Proceedings

Multi-level-patterning using ion species of different penetration depthBUCHMANN, L.-M.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 335-338, issn 0167-9317Conference Paper

The nanometer age: challenge and chanceROHRER, H.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 3-15, issn 0167-9317Conference Paper

Fabrication of slot antenna array coupled warm carrier far-infrared radiation detectorsYASUOKA, Yoshizumi; SUZUKI, Kenji.Microelectronic engineering. 2003, Vol 67-68, pp 528-533, issn 0167-9317, 6 p.Conference Paper

Surface plasmon illumination scheme for contact lithography beyond the diffraction limitMARTIN, Olivier J. F.Microelectronic engineering. 2003, Vol 67-68, pp 24-30, issn 0167-9317, 7 p.Conference Paper

Artificial refractive index gratings manufacturing using electron beam lithographyBABIN, S; TOMNIKOV, A.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 167-170, issn 0167-9317Conference Paper

Comparisons of attenuated PSM technologies using etched quartz and embedded materialsCHI-MIN YUAN; POL, V.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 251-253, issn 0167-9317Conference Paper

Thermoelastic deformations of masks for deep X-ray lithographyFEIERTAG, G; SCHMIDT, M; SCHMIDT, A et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 513-516, issn 0167-9317Conference Paper

Tip displacement during STM pulse modification of siliconGREY, F; HUANG, D. H; AONO, M et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 17-22, issn 0167-9317Conference Paper

Highly anisotropic room-temperature sub-half-micron Si reactive ion etching using fluorine only containing gasesGOGOLIDES, E; GRIGOROPOULOS, S; NASSIOPOULOS, A. G et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 449-452, issn 0167-9317Conference Paper

PREVAIL ― An E-beam stepper with variable axis immersion lensesPFEIFFER, H. C; STICKEL, W.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 143-146, issn 0167-9317Conference Paper

Profile analysis and the isofocal threshold in SEM metrologyBRACHER, B. H; JONCKHEERE, R.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 531-534, issn 0167-9317Conference Paper

Sub-half-micron contact hole definition by i-line optical lithographyARTHUR, G; MARTIN, B.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 279-282, issn 0167-9317Conference Paper

Investigation of emitter tips for scanning tunneling microscope-based microprobe systemsSTAUFER, U; MURAY, L. P; KERN, D. P et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 6, pp 2962-2966, issn 0734-211XConference Paper

NEA photocathode for SEM applicationOHSHIMA, T.Microelectronic engineering. 2003, Vol 67-68, pp 951-954, issn 0167-9317, 4 p.Conference Paper