Mirnov oscillations in a small tokamakTAN, I. H; CALDAS, I. L; NASCIMENTO, I. C et al.IEEE transactions on plasma science. 1986, Vol 14, Num 3, pp 279-281, issn 0093-3813Article

A molecular analysis of Analipus and Ralfsia (Phaeophyceae) suggests the order Ectocarpales is polyphyleticTAN, I. H; DRUEHL, L. D.Journal of phycology. 1994, Vol 30, Num 4, pp 721-729, issn 0022-3646Article

Modification of surface properties of alumina by plasma treatmentPEREIRA, G. J; DA SILVA, M. L. P; TAN, I. H et al.Journal of material chemistry. 2000, Vol 10, Num 2, pp 259-261, issn 0959-9428Article

DNA extraction methods for kelp (Laminariales) tissueMAYES, C; SAUNDERS, G. W; TAN, I. H et al.Journal of phycology. 1992, Vol 28, Num 5, pp 712-716, issn 0022-3646Article

When is a family not a family?SAUNDERS, G. W; KRAFT, G; TAN, I. H et al.Biosystems. 1992, Vol 28, Num 1-3, pp 109-116, issn 0303-2647Article

Plasma immersion ion implantation in arc and glow discharge plasmas submitted to low magnetic fieldsTAN, I. H; UEDA, M; OLIVEIRA, R. M et al.Surface & coatings technology. 2007, Vol 201, Num 9-11, pp 4826-4831, issn 0257-8972, 6 p.Conference Paper

Secondary electron suppression in nitrogen plasma ion implantation using a low DC magnetic fieldUEDA, M; TAN, I. H; DALLAQUA, R. S et al.Surface & coatings technology. 2007, Vol 201, Num 15, pp 6597-6600, issn 0257-8972, 4 p.Conference Paper

Structural effect of nitrogen plasma-based ion implantation on ultra-high molecular weight polyethyleneKOSTOV, K. G; UEDA, M; TAN, I. H et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 287-290, issn 0257-8972, 4 p.Conference Paper

Nitrogen plasma ion implantation in silicon using short pulse high voltage glow dischargesTAN, I. H; UEDA, M; ROSSI, J. O et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 17, pp 5196-5201, issn 0022-3727, 6 p.Article

Treatment of polymers by plasma immersion ion implantation for space applicationsTAN, I. H; UEDA, M; DALLAQUA, R. S et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 234-238, issn 0257-8972, 5 p.Conference Paper

Magnesium plasma immersion ion implantation on silicon wafersTAN, I. H; UEDA, M; DALLAQUA, R. S et al.Surface & coatings technology. 2003, Vol 169-70, pp 379-383, issn 0257-8972, 5 p.Conference Paper

Phylogeny of the Northeast Pacific brown algal (Phaeophycean) orders as inferred from 18S rRNA gene sequencesTAN, I. H; DRUEHL, L. D.Hydrobiologia (The Hague). 1993, Vol 260-61, pp 699-704, issn 0018-8158Conference Paper

Edge gradient and safety-factor effects on electrostatic turbulent transprt in tokamaksTAN, I. H; PRAGER, S. C.Physical review letters. 1992, Vol 68, Num 11, pp 1714-1717, issn 0031-9007Article

Electron states in mesa-etched one-dimensional quantum well wiresSNIDER, G. L; TAN, I.-H; HU, E. L et al.Journal of applied physics. 1990, Vol 68, Num 6, pp 2849-2853, issn 0021-8979, 5 p.Article

Large subband spacings in δ-doped quantum wiresSNIDER, G. L; TAN, I.-H; HU, E. L et al.Journal of applied physics. 1990, Vol 68, Num 11, pp 5922-5924, issn 0021-8979, 3 p.Article

Modeling and performance of wafer-fused resonant-cavity enhanced photodetectorsTAN, I.-H; HU, E. L; BOWERS, J. E et al.IEEE journal of quantum electronics. 1995, Vol 31, Num 10, pp 1863-1874, issn 0018-9197Article

A self-consistent solution of Schrödinger-Poisson equations using a nonuniform meshTAN, I.-H; SNIDER, G. L; CHANG, L. D et al.Journal of applied physics. 1990, Vol 68, Num 8, pp 4071-4076, issn 0021-8979, 6 p.Article

Morphology and optical properties of strained InGaAs quantum wiresMIRIN, R; KRISHNAMURTHY, M; TAN, I.-H et al.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 881-886, issn 0022-0248Conference Paper

Low-temperature Pd bonding of III-V semiconductorsTAN, I.-H; REAVES, C; HOLMES, A. L et al.Electronics Letters. 1995, Vol 31, Num 7, pp 588-589, issn 0013-5194Article

Detection of residual photoresist with the atomic force microscopePRATER, C. B; HANSMA, P. K; TAN, I.-H et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1211-1214, issn 0734-211XArticle

High-brightness AlGaInP light emitting diodesVANDERWATER, D. A; TAN, I.-H; HÖFLER, G. E et al.Proceedings of the IEEE. 1997, Vol 85, Num 11, pp 1752-1764, issn 0018-9219Article

Transferred substrate Schottky-collector heterojunction bipolar transistors: first results and scaling laws for high f_maxBHATTACHARYA, U; MONDRY, M. J; HURTZ, G et al.IEEE electron device letters. 1995, Vol 16, Num 8, pp 357-359, issn 0741-3106Article

Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafersTAN, I.-H; VANDERWATER, D. A; HUANG, J.-W et al.Journal of electronic materials. 2000, Vol 29, Num 2, pp 188-194, issn 0361-5235Article

Strain-induced lateral confinement of excitons in GaAs/AlGaAs quantum well by chemicaldry etchingTAN, I.-H; LISHAN, D. G; MIRIN, R et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 6, pp 3498-3501, issn 0734-211XConference Paper

High-finesse resonant-cavity photodetectors with an adjustable resonance frequency : Special issue on multiwavelength optical technology and networksMURTAZA, S. S; TAN, I.-H; BOWERS, J. E et al.Journal of lightwave technology. 1996, Vol 14, Num 6, pp 1081-1089, issn 0733-8724Article