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A Theoretical Comparison of the Breakdown Behavior of In_0.52Al_0.48As and InP Near-Infrared Single-Photon Avalanche PhotodiodesSOUYE CHEONG LIEW TAT MUN; CHEE HING TAN; DIMLER, Simon J et al.IEEE journal of quantum electronics. 2009, Vol 45, Num 5-6, pp 566-571, issn 0018-9197, 6 p.Article

Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAsTAN, Lionel J. J; WAI MUN SOONG; DAVID, John P. R et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 1, pp 103-106, issn 0018-9383, 4 p.Article

GaInNAsSb/GaAs Photodiodes for Long-Wavelength ApplicationsSIEW LI TAN; SHIYONG ZHANG; ALLAM, Jeremy et al.IEEE electron device letters. 2011, Vol 32, Num 7, pp 919-921, issn 0741-3106, 3 p.Article

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