Analysis of sensitivity and low-frequency intensity noise characteristics of Bragg reflector lasers induced by reflected lightTANBUN-EK, T.Optical and quantum electronics. 1988, Vol 20, Num 6, pp 485-492, issn 0306-8919Article

Strained InGaAs/InP quantum well lasersTEMKIN, H; TANBUN-EK, T; LOGAN, R. A et al.Applied physics letters. 1990, Vol 56, Num 13, pp 1210-1212, issn 0003-6951Article

NEW 1.6 MU M WAVELENGTH GAINASP/INP BURIED HETEROSTRUCTURE LASERSARAI S; ASADA M; SUEMATSU Y et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 10; PP. 349-350; BIBL. 10 REF.Article

Very low-threshold 1.53 μm DFB lasers by VPE transportBROBERG, B; NILSSON, S; TANBUN-EK, T et al.Electronics Letters. 1987, Vol 23, Num 12, pp 624-625, issn 0013-5194Article

SUPPRESSION OF INTENSITY FLUCTUATION OF A LONGITUDINAL MODE IN DIRECTLY MODULATED GAINASP/INP DYNAMIC SINGLE-MODE LASERKOYAMA F; TANBUN EK T; ARAI S et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 9; PP. 325-327; BIBL. 10 REF.Article

FABRICATION AND LASING PROPERTIES OF MESA SUBSTRATE BURIED HETEROSTRUCTURE GAINASP/INP LASERS AT 1.3 MU M WAVELENGTHKISHINO K; SUEMATSU Y; TAKAHASHI Y et al.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 2; PP. 160-164; BIBL. 34 REF.Article

Linewidth enhancement factor for InGaAs/InP strainde quantum well lasersDUTTA, N. K; TEMKIN, H; TANBUN-EK, T et al.Applied physics letters. 1990, Vol 57, Num 14, pp 1390-1391, issn 0003-6951Article

Doping on InP and GaInAs with S during metalorganic vapor-phase epitaxyLOGAN, R. A; TANBUN-EK, T; SERGENT, A. M et al.Journal of applied physics. 1989, Vol 65, Num 9, pp 3723-3725, issn 0021-8979, 3 p.Article

Gas sensing with λ=1.57 μm distributed feedback laser diodes using overtone and combination band absorption : Optics in IrelandWELDON, V; O'GORMAN, J; PHELAN, P et al.Optical engineering (Bellingham. Print). 1994, Vol 33, Num 12, pp 3867-3870, issn 0091-3286Article

Integrated distributed feedback laser and optical amplifierDUTTA, N. K; LOPATA, J; LOGAN, R et al.Applied physics letters. 1991, Vol 59, Num 14, pp 1676-1677, issn 0003-6951Article

InGaAsP (λ = 1.3 μm) stip buried heterostructure lasers grown by MOCVDVAN DER ZIEL, J. P; LOGAN, R. A; TANBUN-EK, T et al.IEEE journal of quantum electronics. 1991, Vol 27, Num 11, pp 2378-2385, issn 0018-9197Article

High frequency buried heterostructure 1.5 μm GaInAsP/InP lasers, grown entirely by metalorganic vapour phase epitaxy in two epitaxial growth stepsTANBUN-EK, T; LOGAN, R. A; VAN DER ZIEL, J. P et al.Electronics Letters. 1988, Vol 24, Num 24, pp 1483-1484, issn 0013-5194Article

ROOM-TEMPERATURE CW OPERATION OF 1-60 MU M GALN ASP/INP BURIED-HETEROSTRUCTURE INTEGRATED LASER WITH BUTT-JOINTED BUILT-IN DISTRIBUTED BRAGG-REFLECTION WAVEGUIDEABE Y; KISHINO K; TANBUN EK T et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 410-411; BIBL. 8 REF.Article

Recombination process and its effect on the dc performance of InP/InGaAs single-heterojunction bipolar transistorsOUACHA, A; CHEN, Q; WILLANDER, M et al.Journal of applied physics. 1993, Vol 73, Num 9, pp 4444-4447, issn 0021-8979Article

High-transconductance insulating-gate InP/InGaAs buried p-buffer DH-MODFET's grown by MOVPEYOUNG-KAI CHEN; TEMKIN, H; TANBUN-EK, T et al.IEEE electron device letters. 1989, Vol 10, Num 4, pp 162-164, issn 0741-3106Article

1•5 μm phase-shifted DFB lasers for single-mode operationSEKARTEDJO, K; EDA, N; FURUYA, K et al.Electronics Letters. 1989, Vol 25, pp S48-S50, issn 0013-5194, no. specArticle

Insulating gate InGaAs/InP field-effect transistorsTEMKIN, H; CHEN, Y. K; GARBINSKI, P et al.Applied physics letters. 1988, Vol 53, Num 25, pp 2534-2536, issn 0003-6951, 3 p.Article

Cavity formation in semiconductor lasersO'GORMAN, J; LEVI, A. F. J; COBLENTZ, D et al.Applied physics letters. 1992, Vol 61, Num 8, pp 889-891, issn 0003-6951Article

InGaAs/InP graded-index quantum well lasers with nearly ideal static characteristicsTEMKIN, H; TANBUN-EK, T; LOGAN, R. A et al.Applied physics letters. 1990, Vol 56, Num 13, pp 1222-1224, issn 0003-6951Article

Raman scattering of slab-mode phonons in InGaAsP/InP multiple quantumù wellsLAZZOUNI, M; NELSON, D. F; LOGAN, R. A et al.Applied physics letters. 1991, Vol 59, Num 19, pp 2406-2408, issn 0003-6951Article

Reproducible growth of low-threshold single and multiple quantum well InGaAs/InP lasers by a novel interlayer growth techniqueTANBUN-EK, T; TEMKIN, H; CHU, S. N. G et al.Applied physics letters. 1989, Vol 55, Num 9, pp 819-821, issn 0003-6951, 3 p.Article

Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated waveguide lens for high-power applicationsKOYAMA, F; LIOU, K.-Y; DENTAI, A. G et al.IEEE photonics technology letters. 1993, Vol 5, Num 8, pp 916-919, issn 1041-1135Article

1.5 μm phase-shifted DFB lasers for single-mode operationSEKARTEDJO, K; EDA, N; FURUYA, K et al.Electronics Letters. 1984, Vol 20, Num 2, pp 80-81, issn 0013-5194Article

Saturable absorption in intracavity loss modulated quantum well lasersO'GORMAN, J; LEVI, A. F. J; TANBUN-EK, T et al.Applied physics letters. 1991, Vol 59, Num 1, pp 16-18, issn 0003-6951Article

Dynamic and static response of mutielectrode lasersO'GORMAN, J; LEVI, A. F. J; NOTTENBURG, R. N et al.Applied physics letters. 1990, Vol 57, Num 10, pp 968-970, issn 0003-6951, 3 p.Article