CONDUCTIBILITE ELECTRIQUE ET PHOTOMEMOIRE DANS CU₂O: COMPENSATION THERMIQUEMENT ET OPTIQUEMENT CONTROLEE D'UNE DISTRIBUTION DE NIVEAUX ACCEPTEURS.TAPIERO M.1975; AO-CNRS-11854; FR.; DA. 1975; PP. 1-172; BIBL. 7 P.; (THESE DOCT. SCI. PHYS.; LOUIS PASTEUR STRASBOURG)Thesis

THE EFFECT OF ION BEAMS ON THE COMPOSITION OF CU₂O(111) SURFACESHERION J; SCHARL G; TAPIERO M et al.1983; APPLICATIONS OF SURFACE SCIENCE; ISSN 0378-5963; NLD; DA. 1983; VOL. 14; NO 3-4; PP. 233-248; BIBL. 24 REF.Article

PHOTOMEMORY EFFECT IN CU₂O SINGLE CRYSTALS. KINETICS OF THE EXCITATION AND DE-EXCITATION PROCESSES.ZIELINGER JP; NOGUET C; TAPIERO M et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 42; NO 1; PP. 91-100; ABS. FR.; BIBL. 8 REF.Article

PHOTOMEMORY EFFECT IN CU₂O SINGLE CRYSTALS. PHENOMENOLOGY AND INTERPRETATION.TAPIERO M; ZIELINGER JP; NOGUET C et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 1; PP. 155-166; ABS. FR.; BIBL. 14 REF.Article

A NEW MODEL FOR INTERPRETING THE ELECTRIC CONDUCTION PHENOMENA IN CU₂O SINGLE CRYSTALS.NOGUET C; TAPIERO M; ZIELINGER JP et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 24; NO 2; PP. 565-574; ABS. FR.; BIBL. 16 REF.Article

assessment of deep levels in photorefractive materials by transient photoelectric methods : Physique du traitement des faisceaux lumineux et des imagesZIELINGER, J. P; TAPIERO, M.Journal de physique. III (Print). 1993, Vol 3, Num 7, pp 1327-1344, issn 1155-4320Article

LONGUEUR DE DIFFUSION DES PORTEURS MINORITAIRES ET STRUCTURE DE JONCTION DES DIODES CU/CU₂O = DIFFUSION LENGTH OF MINORITY CARRIERS AND JUNCTION STRUCTURE OF CU/CU₂O DIODESNOGUET C; PIERRAT D; TAPIERO M et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 3; PP. 595-602; ABS. ENG; BIBL. 16 REF.Article

CONVERSION PHOTOVOLTAIQUE DANS CU₂O = PHOTOVOLTAIC CONVERSION IN CU₂OTAPIERO M; NOGUET C; ZIELINGER JP et al.1979; REV. PHYS. APPL.; FRA; DA. 1979; VOL. 14; NO 1; PP. 231-236; ABS. ENG; BIBL. 15 REF.Article

Photoconductivity studies in vanadium-doped CdTe and Cd_1-xZn_XTeALLACHEN, K; TAPIERO, M; GUELLIL, Z et al.Journal of crystal growth. 1998, Vol 184-85, pp 1142-1146, issn 0022-0248Conference Paper

Growth, spectroscopic and photorefractive investigation of vanadium-doped cadmium tellurideLAUNAY, J. C; MAZOYER, V; TAPIERO, M et al.Applied physics. A, Solids and surfaces. 1992, Vol 55, Num 1, pp 33-40, issn 0721-7250Article

Investigation of photoelectronic processes in CdIn₂S₄ by photoinduced current transient spectroscopySERPI, A; TAPIERO, M; ZIELINGER, J. P et al.Physica status solidi. A. Applied research. 1986, Vol 93, Num 1, pp 241-249, issn 0031-8965Article

Determination of the mobility and transport properties of photocarriers in Bi₁₂GeO₂₀ by the time-of-flight techniqueENNOURI, A; TAPIERO, M; VOLA, J. P et al.Journal of applied physics. 1993, Vol 74, Num 4, pp 2180-2191, issn 0021-8979Article

The problem of quantum yield and diffusion length measurements in presence of a thick frontal «dead layer»TAPIERO, M; NOGUET, C; ZIELINGER, J. P et al.Photovoltaic solar energy conference. 5. 1984, pp 103-108Conference Paper

Preparation and characterization of Zn₄Sb₃TAPIERO, M; TARABICHI, S; GIES, J. G et al.Solar energy materials. 1985, Vol 12, Num 4, pp 257-274, issn 0165-1633Article

L'artisanat lorrain: d'après le rapport de Daniel HuetTAPIERO, M.Les Dossiers de l'Economie Lorraine. 1980, Num 55, pp 9-15Article

Le tertiaire: la Lorraine est-elle sous-équipée dans ce secteur?TAPIERO, M.Les Dossiers de l'Economie Lorraine. 1979, Num 43, pp 17-25Article

Optical, photoelectrical, deep level and photorefractive characterization of CdTe:VZIELINGER, J. P; TAPIERO, M; GUELLIL, Z et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 16, Num 1-3, pp 273-278, issn 0921-5107Conference Paper

Photoinduced current transient spectroscopy in high-resistivity bulk materials: instrumentation and methodologyTAPIERO, M; BENJELLOUN, N; ZIELINGER, J. P et al.Journal of applied physics. 1988, Vol 64, Num 8, pp 4006-4012, issn 0021-8979Article

Properties of amorphous Zn₃P₂ = Propriétés de Zn₃P₂ amorpheDEISS, J. L; DRISSI, B. E; ROBINO, M et al.Journal of non-crystalline solids. 1987, Vol 97-98, pp 679-682, issn 0022-3093, 1Conference Paper

Investigation of deep levels in high-resistivity bulk materials by photo-induced current transient spectroscopy. I: Review and analysis of some basic problemsBALLAND, J. C; ZIELINGER, J. P; NOGUET, C et al.Journal of physics. D, Applied physics (Print). 1986, Vol 19, Num 1, pp 57-70, issn 0022-3727Article

Determination of the factors controlling the optical background absorption in nominally undoped and doped sillenitesMARQUET, H; TAPIERO, M; MERLE, J. C et al.Optical materials (Amsterdam). 1998, Vol 11, Num 1, pp 53-65, issn 0925-3467Article

La France et ses régionsCHAMPSAUR, P; GAUTHIER, G; TAPIERO, M et al.1993, 191 p.Book

Characterization of deep levels in Bi₁₂GeO₂₀ by photoinduced current transient spectroscopyBENJELLOUN, N; TAPIERO, M; ZIELINGER, J. P et al.Journal of applied physics. 1988, Vol 64, Num 8, pp 4013-4023, issn 0021-8979Article

Amorphous thin films of Zn₃P₂DEISS, J. L; ELI-DRISSI, B; ROBINO, M et al.Physica scripta (Print). 1988, Vol 37, Num 4, pp 587-592, issn 0031-8949Conference Paper

Investigation of deep levels in high-resistivity bulk materials by photo-induced current transient spectroscopy. II: Evaluation of various signal processing methodsBALLAND, J. C; ZIELINGER, J. P; TAPIERO, M et al.Journal of physics. D, Applied physics (Print). 1986, Vol 19, Num 1, pp 71-87, issn 0022-3727Article