Accumulation and exclusion of excess carriers observed in inhomogeneous germanium samplesTESLENKO, G. I; PIOTROWSKI, T; PULTORAK, J et al.Semiconductor science and technology. 1996, Vol 11, Num 1, pp 133-134, issn 0268-1242Article

Rayonnement thermique d'une diode semiconductrice soumise à une polarisation directeMALYUTENKO, V. K; TESLENKO, G. I.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 8, pp 1452-1457, issn 0015-3222Article

The transient exclusion effect in intrinsic semiconductorsMALYUTENKO, V. K; VAINBERG, V. V; TESLENKO, G. I et al.Semiconductor science and technology. 2002, Vol 17, Num 10, pp 1058-1063, issn 0268-1242Article

Negative contrast IR emitting device based on the carrier contact exclusionMALYUTENKO, V. K; VAINBERG, V. V; TESLENKO, G. I et al.Semiconductor science and technology. 2003, Vol 18, Num 7, pp 697-702, issn 0268-1242, 6 p.Article

Negative differential photoconductivity in magnetoconcentration effectMALYUTENKO, V. K; MALOZOVSKII, YU. M; TESLENKO, G. I et al.Physica status solidi. A. Applied research. 1984, Vol 81, Num 1, pp 391-398, issn 0031-8965Article

IR study of exclusion-accumulation effects enhanced by the geometrical factorMALYUTENKO, V. K; TESLENKO, G. I; VAINBERG, V. V et al.Semiconductor science and technology. 2000, Vol 15, Num 11, pp 1054-1060, issn 0268-1242Article