AFM manipulation of carbon nanotubes: realization of ultra-fine nanoelectrodesTHELANDER, Claes; SAMUELSON, Lars.Nanotechnology (Bristol. Print). 2002, Vol 13, Num 1, pp 108-113, issn 0957-4484Article

Crystal Phase Engineering in Single InAs NanowiresDICK, Kimberly A; THELANDER, Claes; SAMUELSON, Lars et al.Nano letters (Print). 2010, Vol 10, Num 9, pp 3494-3499, issn 1530-6984, 6 p.Article

Nanowire single-electron memoryTHELANDER, Claes; NILSSON, Henrik A; JENSEN, Linus E et al.Nano letters (Print). 2005, Vol 5, Num 4, pp 635-638, issn 1530-6984, 4 p.Article

Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal LimitSTORM, Kristian; NYLUND, Gustav; BORGSTRÖM, Magnus et al.Nano letters (Print). 2011, Vol 11, Num 3, pp 1127-1130, issn 1530-6984, 4 p.Article

Effects of Crystal Phase Mixing on the Electrical Properties of InAs NanowiresTHELANDER, Claes; CAROFF, Philippe; PLISSARD, Sébastien et al.Nano letters (Print). 2011, Vol 11, Num 6, pp 2424-2429, issn 1530-6984, 6 p.Article

Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap GateTHELANDER, Claes; FROBERG, Linus E; REHNSTEDT, Carl et al.IEEE electron device letters. 2008, Vol 29, Num 3, pp 206-208, issn 0741-3106, 3 p.Article

Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates : Nanowire transistors: modeling, device, desing, and technologyREHNSTEDT, Carl; MARTENSSON, Thomas; THELANDER, Claes et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 11, pp 3037-3041, issn 0018-9383, 5 p.Article

Combining Axial and Radial Nanowire Heterostructures: Radial Esaki Diodes and Tunnel Field-Effect TransistorsDEY, Anil W; SVENSSON, Johannes; EK, Martin et al.Nano letters (Print). 2013, Vol 13, Num 12, pp 5919-5924, issn 1530-6984, 6 p.Article

Heterostructure Barriers in Wrap Gated Nanowire FETsFRÖBERG, Linus E; REHNSTEDT, Carl; THELANDER, Claes et al.IEEE electron device letters. 2008, Vol 29, Num 9, pp 981-983, issn 0741-3106, 3 p.Article

Large Thermoelectric Power Factor Enhancement Observed in InAs NanowiresWU, Phillip M; GOOTH, Johannes; ZIANNI, Xanthippi et al.Nano letters (Print). 2013, Vol 13, Num 9, pp 4080-4086, issn 1530-6984, 7 p.Article

A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure NanowireNILSSON, Henrik A; DUTY, Tim; ABAY, Simon et al.Nano letters (Print). 2008, Vol 8, Num 3, pp 872-875, issn 1530-6984, 4 p.Article

Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter studyMANDL, Bernhard; DEY, Anil W; STANGL, Julian et al.Journal of crystal growth. 2011, Vol 334, Num 1, pp 51-56, issn 0022-0248, 6 p.Article

Development of a Vertical Wrap-Gated InAs FET : Nanowire transistors: modeling, device, desing, and technologyTHELANDER, Claes; REHNSTEDT, Carl; FRÖBERG, Linus E et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 11, pp 3030-3036, issn 0018-9383, 7 p.Article

High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect TransistorsDEY, Anil W; BORG, B. Mattias; GANJIPOUR, Bahram et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 211-213, issn 0741-3106, 3 p.Article

Demonstration of Defect-Free and Composition Tunable Ga_xIn_1―xSb NanowiresGORJI GHALAMESTANI, Sepideh; EK, Martin; GANJIPOUR, Bahram et al.Nano letters (Print). 2012, Vol 12, Num 9, pp 4914-4919, issn 1530-6984, 6 p.Article

Formation of the Axial Heterojunction in GaSb/InAs(Sb) Nanowires with High Crystal QualityEK, Martin; BORG, B. Mattias; DEY, Anil W et al.Crystal growth & design. 2011, Vol 11, Num 10, pp 4588-4593, issn 1528-7483, 6 p.Article

InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect TransistorsBORG, B. Mattias; DICK, Kimberly A; GANJIPOUR, Bahram et al.Nano letters (Print). 2010, Vol 10, Num 10, pp 4080-4085, issn 1530-6984, 6 p.Article

Giant, Level-Dependent g Factors in InSb Nanowire Quantum DotsNILSSON, Henrik A; CAROFF, Philippe; THELANDER, Claes et al.Nano letters (Print). 2009, Vol 9, Num 9, pp 3151-3156, issn 1530-6984, 6 p.Article

Electrical properties of GaSb/InAsSb core/ shell nanowiresGANJIPOUR, Bahram; SEPEHRI, Sobhan; DEY, Anil W et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 42, issn 0957-4484, 425201.1-425201.9Article

High-Performance InAs Nanowire MOSFETsDEY, Anil W; THELANDER, Claes; LIND, Erik et al.IEEE electron device letters. 2012, Vol 33, Num 6, pp 791-793, issn 0741-3106, 3 p.Article

High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure NanowiresGANJIPOUR, Bahram; DEY, Anil W; MATTIAS BORG, B et al.Nano letters (Print). 2011, Vol 11, Num 10, pp 4222-4226, issn 1530-6984, 5 p.Article

III-V Nanowires-Extending a Narrowing RoadWERNERSSON, Lars-Erik; THELANDER, Claes; LIND, Erik et al.Proceedings of the IEEE. 2010, Vol 98, Num 12, pp 2047-2060, issn 0018-9219, 14 p.Article

Few-electron quantum dots in nanowiresBJÖRK, Mikael T; THELANDER, Claes; HANSEN, Adam E et al.Nano letters (Print). 2004, Vol 4, Num 9, pp 1621-1625, issn 1530-6984, 5 p.Article