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Facetless Bragg reflector surface-emitting AIGaAs/GaAs lasers fabricated by electron-beam lithography and chemically assisted ion-beam etchingTIBERIO, R. C; PORKOLAB, G. A; KING, O et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 6, pp 2842-2845, issn 0734-211XConference Paper

DC and microwave characteristics of sub-0.1-μm gate-length planar-doped pseudomorphic HEMT'sPANE-CHANE CHAO; SHUR, M. S; TIBERIO, R. C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 461-473, issn 0018-9383, 13 p.Article

Fabrication of thin-film metal nanobridgesRALLS, K. S; BUHRMAN, R. A; TIBERIO, R. C et al.Applied physics letters. 1989, Vol 55, Num 23, pp 2459-2461, issn 0003-6951, 3 p.Article

Gate-length dependence of the speed of SSI circuits using submicrometer selectively doped heterostructure transistor technologySHAH, N. J; SHIN-SHEM PEI; TU, C. W et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 5, pp 543-547, issn 0018-9383Article

Process optimization of a chemically amplified negative resist for electron beam exposure and mask making applicationsAINLEY, E; NORDQUIST, K; RESNICK, D. J et al.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 375-378, issn 0167-9317Conference Paper

Deep fin-like AlGaAs nanostructure fabrications by CAIBEWU, S; WANG LIJUN; TIBERIO, R. C et al.SPIE proceedings series. 1998, pp 59-62, isbn 0-8194-3012-9Conference Paper

11 ps ring oscillators with submicrometre selectively doped heterostructure transistorsSHAH, N. J; PEI, S. S; TU, C. W et al.Electronics Letters. 1985, Vol 21, Num 4, pp 151-152, issn 0013-5194Article

Electron beam nanofabrication with self-assembled monolayers of alkylthiols and alkylsiloxanesLERCEL, M. J; REDINBO, G. F; ROOKS, M et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 43-46, issn 0167-9317Conference Paper

Optical switching dynamics of the nonlinear Bragg reflector : comparison of theory and experimentSANKEY, N. D; PRELEWITZ, D. F; BROWN, T. G et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7111-7119, issn 0021-8979, 1Article

94 GHz low-noise HEMTCHAO, P. C; DUH, K. H. G; HO, P et al.Electronics Letters. 1989, Vol 25, Num 8, pp 504-505, issn 0013-5194, 2 p.Article

0.1 μm Gate length MODFETs with unity current gain cutoff frequency above 110 GHzLEPORE, A. N; LEVY, H. M; TIBERIO, R. C et al.Electronics Letters. 1988, Vol 24, Num 6, pp 364-366, issn 0013-5194Article

Electron-beam lithography for the magnetic recording industry: fabrication of nanoscale (10 nm) thin-film read headsDRISKILL-SMITH, A. A. G; KATINE, J. A; DRUIST, D. P et al.Microelectronic engineering. 2004, Vol 73-74, pp 547-552, issn 0167-9317, 6 p.Conference Paper

Propagation loss measurements in semiconductor microcavity ring and disk resonatorsRAFIZADEH, D; ZHANG, J. P; TIBERIO, R. C et al.Journal of lightwave technology. 1998, Vol 16, Num 7, pp 1308-1314, issn 0733-8724Article

All-optical switching with low-peak power in microfabricated AlGaAs waveguidesESPINDOLA, R. P; UDO, M. K; WU, S. L et al.IEEE photonics technology letters. 1995, Vol 7, Num 6, pp 641-643, issn 1041-1135Article

Self-assembled monolayer electron beam resist on GaAsTIBERIO, R. C; CRAIGHEAD, H. G; LERCEL, M et al.Applied physics letters. 1993, Vol 62, Num 5, pp 476-478, issn 0003-6951Article

CW performance of an InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diodeMARTIN, R. D; FOROUHAR, S; LANG, R. J et al.IEEE photonics technology letters. 1995, Vol 7, Num 3, pp 244-246, issn 1041-1135Article

Laterally-coupled distributed feedback laser fabricated with electron beam lithography and chemically assisted ion beam etchingTIBERIO, R. C; CHAPMAN, P. F; DRUMHELLER, J. P et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 67-70, issn 0167-9317Conference Paper

Diffraction gratings for measuring slow model surface plasmon polaritonsTIBERIO, R. C; PUGH, G. M; SJODIN, T et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 6, pp 2633-2636, issn 1071-1023Conference Paper

Self-assembled monolayer electron-beam resists on GaAs and SiO₂LERCEL, M. J; TIBERIO, R. C; CHAPMAN, P. F et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 6, pp 2823-2828, issn 1071-1023Conference Paper

0.1-μm gate-length pseudomorphic HEMT'sCHAO, P. C; TIBERIO, R. C; DUH, K.-H. G et al.IEEE electron device letters. 1987, Vol 8, Num 10, pp 489-491, issn 0741-3106Article