LES MANUELS SCIENTIFIQUES DE GASTON DE RENTY (1639)TRIBOULET R.DIX-SEPTIEME SIECLE. 1972, Num 97, pp 51-69Article

PREPARATION ET CARACTERISATION DE TELLURURE DE CADMIUM DE GRANDE PURETETRIBOULET R.1972; ; S.L.; DA. 1972; PP. 1-138; BIBL. 7 P. 1/2; (THESE DOCT. UNIV., MENTION SCI.; UNIV. PARIS VI; 1972)Thesis

CDTE AND CDTE: HG ALLOYS CRYSTAL GROWTH USING STOICHIOMETRIC AND OFF-STOICHIOMETRIC ZONE PASSING TECHNIQUES.TRIBOULET R.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 2; PP. 123-128; ABS. FR.; BIBL. 24 REF.; (COLLOQ. INT. TELLURURE CADMIUM. PROPR. PHYS. APPL. 2; STRASBOURG; 1976)Conference Paper

Corneille et l'aspiration au martyre in CorneilleTRIBOULET, R.Revue d'Histoire Littéraire de la France Paris. 1985, Vol 85, Num 5, pp 771-784Article

GROWTH OF ZNTE BY STOICHIOMETRIC AND OFF STOICHIOMETRIC ZONE REFINING.TRIBOULET R; DIDIER G.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 1; PP. 29-35; BIBL. 25 REF.Article

Renty (Gaston de) in Raban Maur - Robert d'ArbusselTRIBOULET, R.Dictionnaire de Spiritualité Ascétique et Mystique. 1987, Vol 13, Num 86-88, pp 363-369Article

The travelling heater method (THM) for Hg_1-xCd_xTe and related materialsTRIBOULET, R.Progress in crystal growth and characterization of materials. 1994, Vol 28, Num 1-2, pp 85-144, issn 0960-8974Article

MOVPE of narrow band gap II-VI materialsTRIBOULET, R.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 598-604, issn 0022-0248Conference Paper

CDTE GROWTH BY "MULTIPASS THM" AND "SUBLIMATION THM"TRIBOULET R; MARFAING Y.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 1; PP. 89-96; BIBL. 27 REF.Article

Alternative small gap materials for IR detectionTRIBOULET, R.Semiconductor science and technology. 1990, Vol 5, Num 11, pp 1073-1079, issn 0268-1242Article

The scope of CdTe growth for production of epitaxial substratesTRIBOULET, R.Materials forum (Rushcutters Bay). 1991, Vol 15, Num 1, pp 30-34, issn 0883-2900Conference Paper

OBSERVATION OF SHORT-ORDER CLUSTERING EFFECT IN CD_1-XHG_XTEKOZYREV SP; VODOPYANOV LK; TRIBOULET R et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 4; PP. 383-385; BIBL. 7 REF.Article

SIMULTANEOUS SYNTHESIS AND GROWTH BY THM OF LARGE HGTE CRYSTALS OF HIGH PURITY.TRIBOULET R; TRIBOULET D; DIDIER G et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 38; NO 1; PP. 82-84; BIBL. 10 REF.Article

DESCRIPTION OF ANOMALOUS CENTERS IN CHLORINE DOPED-CDTE BY A NON-PURELY ELECTRONIC MODEL.LEGROS R; MARFAING Y; TRIBOULET R et al.1978; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1978; VOL. 39; NO 2; PP. 179-184; BIBL. 20 REF.Article

N-TYPE CDTE SEMICONDUCTOR DETECTORS AS X- AND LOW-ENERGY GAMMA-RAY ROOM-TEMPERATURE SPECTROMETERS.DABROWSKI AJ; IWANCZYK J; TRIBOULET R et al.1975; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1975; VOL. 126; NO 3; PP. 417-420; BIBL. 15 REF.Article

REACTIONS ELECTROCHIMIQUES CATHODIQUES SUR UNE ELECTRODE DE TELLURE DE ZINC MONOCRISTALLINE EN MILIEU AQUEUXBAHMAN FOTOUHI; TRIBOULET R; LEMASSON P et al.1982; C.R. SEANCES ACAD. SCI., SER. 2, MEC. PHYS. CHIM. SCI. TERRE SCI. UNIVERS; ISSN 0249-6305; FRA; DA. 1982; VOL. 294; NO 3; PP. 167-177; ABS. ENG; BIBL. 7 REF.Article

STUDY OF THE ABSORPTION EDGE PINNING OF CD_1-XMN_XTE BY TRANSMISSION AND PIEZOTRANSMISSION MEASUREMENTSDIOURI J; LASCARAY JP; TRIBOULET R et al.1981; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1981; VOL. 42; NO 3; PP. 231-232; BIBL. 8 REF.Article

MINORITY CARRIER DIFFUSION LENGTH MEASUREMENTS IN CDTE BY A PHOTOCURRENT TECHNIQUELASTRAS MARTINEZ A; RACCAH PM; TRIBOULET R et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 6; PP. 469-471; BIBL. 9 REF.Article

UN CENTRE MOLECULAIRE AVEC UNE CONFIGURATION DEPENDANTE DE L'ETAT DE CHARGE POUR EXPLIQUER LES PROPRIETES ANORMALES DU CDTE DOPE AU CHLORE.LEGROS R; MARFAING Y; TRIBOULET R et al.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 2; PP. 245-248; ABS. ANGL.; BIBL. 12 REF.; (COLLOQ. INT. TELLURURE CADMIUM. PROPR. PHYS. APPL. 2; STRASBOURG; 1976)Conference Paper

ELECTROABSORPTION BY IMPURITIES AND DEFFECTS IN SEMI-INSULATING CDTE.NEU G; MARFAING Y; TRIBOULET R et al.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 2; PP. 263-266; ABS. FR.; BIBL. 13 REF.; (COLLOQ. INT. TELLURURE CADMIUM. PROPR. PHYS. APPL. 2; STRASBOURG; 1976)Conference Paper

N-TYPE CADMIUM TELLURIDE SURFACE BARRIER NUCLEAR DETECTORS.DABROWSKI AJ; CHWASZCZEWSKA J; IWANCZYK J et al.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 2; PP. 297-302; ABS. FR.; BIBL. 23 REF.; (COLLOQ. INT. TELLURURE CADMIUM. PROPR. PHYS. APPL. 2; STRASBOURG; 1976)Conference Paper

Sublimation and chemical vapor transport, a new method for the growth of bulk ZnSe crystalsMIMILA, J; TRIBOULET, R.Materials letters (General ed.). 1995, Vol 24, Num 4, pp 221-224, issn 0167-577XArticle

The semiconductor/electrolyte interface: a re-examination of n-type cadmium telluride electrodesLEMASSON, P; TRIBOULET, R.Surface science. 1988, Vol 207, Num 1, pp 118-132, issn 0039-6028Article

ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF A DEEP CL-ASSOCIATED CENTER IN ZNTE: CLSAMINADAYAR K; GALLAND D; MAGNEA N et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 4; PP. 2095-2100; BIBL. 17 REF.Article

LATTICE DYNAMICS OF CD-RICH CD_1-XHG_XTE ALLOYSHOCLET M; PLUMELLE P; VANDEVYVER M et al.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 92; NO 2; PP. 545-549; ABS. FRE; BIBL. 25 REF.Article