Line tension of extended double kinks in thin filmsTWIGG, M. E.Journal of applied physics. 1990, Vol 68, Num 10, pp 5109-5114, issn 0021-8979Article

Indirect determination of the single loss function from plural scattering dataTWIGG, M. E.Ultramicroscopy. 1982, Vol 10, Num 3, pp 291-296, issn 0304-3991Article

Morphological instability in InAs/GaSb heterostructuresTWIGG, M. E; BENNETT, B. R; MAGNO, R et al.Journal of crystal growth. 1998, Vol 191, Num 4, pp 651-662, issn 0022-0248Article

A comparison of two models for the characteristic X-ray fluorescence correction in thin foil analysisTWIGG, M. E; FRASER, H. L.Journal of microscopy (Print). 1984, Vol 133, Num 1, pp 61-67, issn 0022-2720Article

The nucleation and growth of germanium on (11^-02) sapphire deposited by molecular-beam epitaxyGODBEY, D. J; TWIGG, M. E.Journal of applied physics. 1991, Vol 69, Num 8, pp 4216-4221, issn 0021-8979, 1Article

Lattice walks by long jumpsWRIGLEY, J. D; TWIGG, M. E; EHRLICH, G et al.The Journal of chemical physics. 1990, Vol 93, Num 4, pp 2885-2902, issn 0021-9606, 18 p.Article

Solid-phase regrowth of amorphous GaAs grown by low-temperature molecular-beam epitaxyTWIGG, M. E; FATEMI, M; TADAYON, B et al.Applied physics letters. 1993, Vol 63, Num 3, pp 320-321, issn 0003-6951Article

Microtwin morphology and volume fraction for silicon on sapphireTWIGG, M. E; RICHMOND, E. D.Journal of applied physics. 1988, Vol 64, Num 6, pp 3037-3042, issn 0021-8979Article

GaN decomposition in H₂ and N₂ at MOVPE temperatures and pressuresKOLESKE, D. D; WICKENDEN, A. E; HENRY, R. L et al.Journal of crystal growth. 2001, Vol 223, Num 4, pp 466-483, issn 0022-0248Article

Magnetic resonance studies of defects in GaN with reduced dislocation densitiesGLASER, E. R; FREITAS, J. A; SUSKI, T et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 51-57, issn 0921-4526Conference Paper

Epitaxial Si-based tunnel diodesTHOMPSON, P. E; HOBART, K. D; TWIGG, M. E et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 145-150, issn 0040-6090Conference Paper

Interfacial disorder in InAs/GaSb superlatticesTWIGG, M. E; BENNETT, B. R; THIBADO, P. M et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1998, Vol 77, Num 1, pp 7-30, issn 1364-2804Article

Defect mechanisms in degradation of 1.3-υm wavelength channeled-substrate buried heterostructure lasersCHU, S. N. G; NAKAHARA, S; TWIGG, M. E et al.Journal of applied physics. 1988, Vol 63, Num 3, pp 611-623, issn 0021-8979Article

Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface stepsBASSIM, N. D; TWIGG, M. E; TRUNEK, A. J et al.Journal of crystal growth. 2007, Vol 304, Num 1, pp 103-107, issn 0022-0248, 5 p.Article

Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBTMASTRO, M. A; EDDY, C. R; BASSIM, N. D et al.Solid-state electronics. 2005, Vol 49, Num 2, pp 251-256, issn 0038-1101, 6 p.Article

Resistivity control in unintentionally doped GaN films grown by MOCVDWICKENDEN, A. E; KOLESKE, D. D; HENRY, R. L et al.Journal of crystal growth. 2004, Vol 260, Num 1-2, pp 54-62, issn 0022-0248, 9 p.Article

Selective removal of Si_1-xGe_x from (100) Si using HNO₃ and HFGODBEY, D. J; KRIST, A. H; HOBART, K. D et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 10, pp 2943-2947, issn 0013-4651Article

The complementary use of atom probe field ion microscopy and analytical transmission electron microscopy for the study of a Ni-base superalloy = L'usage complémentaire de la microscopie ionique à émission de champ à sonde atomique et microscopie électronique en transmission analytique pour l'étude d'un superalliage à base de NiMELMED, A. J; TWIGG, M. E; KLEIN, R et al.Journal de physique. Colloques. 1984, Vol 45, Num 9, pp 373-378, issn 0449-1947Article

Structure and composition of Ba_0.5Sr_0.5TiO₃ films deposited on (001) MgO substrates and the influence of sputtering pressureTWIGG, M. E; ALLDREDGE, L. M. B; CHANG, W et al.Thin solid films. 2013, Vol 548, pp 178-185, issn 0040-6090, 8 p.Article

MOCVD growth of thick AlN and AlGaN superlattice structures on Si substratesMASTRO, M. A; EDDY, C. R; GASKILL, D. K et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 610-614, issn 0022-0248, 5 p.Conference Paper

The effect of post-growth cooling rate on the defect structure in MBE-grown buried layers of Si_1-xGe_x on Si substratesFATEMI, M; THOMPSON, P. E; TWIGG, M. E et al.Thin solid films. 1998, Vol 312, Num 1-2, pp 362-371, issn 0040-6090Article

Accurate determination of effective quantum well thickness : infrared absorption by transverse-optical phononsYANG, M. J; WAGNER, R. J; SHANABROOK, B. V et al.Applied physics letters. 1992, Vol 61, Num 5, pp 583-585, issn 0003-6951Article

Interfacial point defects in heavily implanted silicon germanium alloysZVANUT, M. E; CARLOS, W. E; TWIGG, M. E et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 4, pp 2026-2029, issn 0734-211XConference Paper

The study of relaxation in asymmetrically strained Si_1-xGe_x/Si superlatticesPROKES, S. M; GLEMBOCKI, O. J; TWIGG, M. E et al.Journal of electronic materials. 1991, Vol 20, Num 5, pp 389-394, issn 0361-5235Article

Single-crystal germanium grown on (1102) sapphire by molecular beam epitaxyGODBEY, D. J; QADRI, S. B; TWIGG, M. E et al.Applied physics letters. 1989, Vol 54, Num 24, pp 2449-2451, issn 0003-6951, 3 p.Article