au.\*:("VAINBERG, V. V")
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Low-temperature sensors based on telluride microcrystalsVARSHAVA, S. S; PELEKH, L. N; VAINBERG, V. V et al.Sensors and actuators. A, Physical. 1992, Vol 30, Num 1-2, pp 55-58, issn 0924-4247Conference Paper
Thermometric characteristics of carbon fibresVAINBERG, V. V; VOROBKALO, F. M; ZARUBIN, L. I et al.Sensors and actuators. A, Physical. 1993, Vol 39, Num 3, pp 237-240, issn 0924-4247Article
Negative contrast IR emitting device based on the carrier contact exclusionMALYUTENKO, V. K; VAINBERG, V. V; TESLENKO, G. I et al.Semiconductor science and technology. 2003, Vol 18, Num 7, pp 697-702, issn 0268-1242, 6 p.Article
Application of semiconductor whisker crystals in low temperature electronicsBAITSAR, R. I; VAINBERG, V. V; VARSHAVA, S. S et al.Journal de physique. IV. 1996, Vol 6, Num 3, pp C3.429-C3.434, issn 1155-4339Conference Paper
IR study of exclusion-accumulation effects enhanced by the geometrical factorMALYUTENKO, V. K; TESLENKO, G. I; VAINBERG, V. V et al.Semiconductor science and technology. 2000, Vol 15, Num 11, pp 1054-1060, issn 0268-1242Article
The transient exclusion effect in intrinsic semiconductorsMALYUTENKO, V. K; VAINBERG, V. V; TESLENKO, G. I et al.Semiconductor science and technology. 2002, Vol 17, Num 10, pp 1058-1063, issn 0268-1242Article
Exclusion in the semiconductor p+-p-p+ structure under conditions of a temperature gradientMALYUTENKO, V. K; SOKOLOV, V. N; VAINBERG, V. V et al.Semiconductor science and technology. 1998, Vol 13, Num 1, pp 54-58, issn 0268-1242Article
Influence of conduction via a channel of an impurity δ-layer on the magneto-quantum effects in AlGaAs/GaAs/AlGaAs heterostructuresVAINBERG, V. V; PYLYPCHUK, A. S; POROSHIN, V. N et al.Physica. E, low-dimentional systems and nanostructures. 2014, Vol 60, pp 31-36, issn 1386-9477, 6 p.Article