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The Gap between Theory and PracticeVONK, H.European journal of teacher education. 1985, Vol 8, Num 3, pp 307-317, issn 0261-9768Article

Morphology of homo-epitaxial vicinal (1 0 0) III-V surfacesVERSCHUREN, C. A; LEYS, M. R; RONGEN, R. T. H et al.Journal of crystal growth. 1999, Vol 200, Num 1-2, pp 19-31, issn 0022-0248Article

Butt-coupling loss of 0.1 dB/interface in InP/InGaAs multiple-quantum-well waveguide-waveguide structures grown by selective area chemical beam epitaxyVERSCHUREN, C. A; HARMSMA, P. J; OEI, Y. S et al.Semiconductor science and technology. 1998, Vol 13, Num 8A, pp A169-A172, issn 0268-1242Conference Paper

Surface morphology of InP/InGaAs in selective area growth by chemical beam epitaxyVERSCHUREN, C. A; LEYS, M. R; OEI, Y. S et al.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 650-654, issn 0022-0248Conference Paper

A modified BCF model to quantitatively describe the (1 0 0)InP growth rate in chemical beam epitaxyVERSCHUREN, C. A; LEYS, M. R; MARSCHNER, T et al.Journal of crystal growth. 1998, Vol 188, Num 1-4, pp 11-16, issn 0022-0248Conference Paper

Effects of tensile strain and substrate off-orientation on the growth of GaInAs/InP multiple quantum well structures by CBEMARSCHNER, T; RONGEN, R. T. H; LEYS, M. R et al.Journal of crystal growth. 1997, Vol 175-76, pp 1081-1086, issn 0022-0248, 2Conference Paper

Butt-coupling loss of 0.1 dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxyVERSCHUREN, C. A; HARMSMA, P. J; OEI, Y. S et al.Journal of crystal growth. 1998, Vol 188, Num 1-4, pp 288-294, issn 0022-0248Conference Paper

Investigations on indium phosphide grown by chemical beam epitaxyRONGEN, R. T. H; LEYS, M. R; VAN HALL, P. J et al.Journal of electronic materials. 1995, Vol 24, Num 10, pp 1391-1398, issn 0361-5235Article

Interface manipulation in GaxIn1-xAs/InP multiple-layer structures grown by chemical beam epitaxyRONGEN, R. T. H; VAN RIJSWIJK, A. J. C; LEYS, M. R et al.Semiconductor science and technology. 1997, Vol 12, Num 8, pp 974-980, issn 0268-1242Article

Relationship between tetramer-dimer assembly and the stability of Hb Malmö (α2β297 GLn)ADACHI, K; VONK, H; REILLY, M. P et al.Biochimica et biophysica acta. 1984, Vol 790, Num 2, pp 132-140, issn 0006-3002Article

Epitaxial layer morphology of highly strained GaInAs/InP multiple quantum well structures grown by CBEMARSCHNER, T; TICHELAAR, F. D; LEYS, M. R et al.Microelectronics journal. 1997, Vol 28, Num 8-10, pp 849-855, issn 0959-8324Conference Paper

Monolithic catalysts for selective hydrogenation of benzaldehydeXIAODING, X; VONK, H; VON DE RIET, A. C. J. M et al.Catalysis today. 1996, Vol 30, Num 1-3, pp 91-98, issn 0920-5861, 7 p.Conference Paper

Strained GaInAs/InP MQW layers grown by CBE for optical componentsVREEBURG, C. G. M; OEI, Y. S; VERBEEK, B. H et al.Journal of crystal growth. 1996, Vol 164, Num 1-4, pp 442-448, issn 0022-0248Conference Paper

Substitution of InP layers to InAs for strain compensation in GaxIn1-xAs/InP superlatticesRONGEN, R. T. H; LEYS, M. R; VONK, H et al.Journal of crystal growth. 1996, Vol 164, Num 1-4, pp 263-270, issn 0022-0248Conference Paper

Growth of GaxIn1-xAs/InP thin layer strutures by chemical beam epitaxyLEYS, M. R; RONGEN, R. T. H; HOPKINS, J et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 633-637, issn 0022-0248, 1Conference Paper

Effects of inhalation of β2-sympathicomimetic and anticholinergic agents on the impedance of the respiratory system in normal subjectsWESSELING, G; VONK, H. M; WOUTERS, E. F. M et al.Chest. 1990, Vol 97, Num 5, pp 1137-1140, issn 0012-3692, 4 p.Article

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