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A TECHNIQUE FOR RAPIDLY ALTERNATING BORON AND ARSENIC DOPING IN ION-IMPLANTED SILICON MOLECULAR BEAM EPITAXYSWARTZ RG; MCFEE JH; VOSHCHENKOV AW et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 239-241; BIBL. 4 REF.Article
