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Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopyBELYAEV, A. E; STRELCHUK, V. V; NIKOLENKO, A. S et al.Semiconductor science and technology. 2013, Vol 28, Num 10, issn 0268-1242, 105011.1-105011.6Article

Temperature driven three-dimensional ordering of InGaAs/GaAs quantum dot superlattices grown under As2 gas fluxLYTVYN, P. M; MAZUR, Yu. I; BENAMARA, M et al.Applied surface science. 2014, Vol 305, pp 689-696, issn 0169-4332, 8 p.Article

Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1_xBix/GaAs heterostructuresMAZUR, Yu I; DOROGAN, V. G; SALAMO, G. J et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 3, issn 0957-4484, 035702.1-035702.9Article

Life Styles Inventory: evidence for its factorial validityWARE, M. E; LEAK, G. K; PERRY, N. W et al.Psychological reports. 1985, Vol 56, Num 3, pp 963-968, issn 0033-2941Article

Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray studyKLADKO, V. P; KUCHUK, A. V; MANASREH, M. O et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 2, issn 0022-3727, 025403.1-025403.8Article

Optical signatures of coupled quantum dotsSTINAFF, E. A; SCHEIBNER, M; BRACKER, A. S et al.Science (Washington, D.C.). 2006, Vol 311, Num 5761, pp 636-639, issn 0036-8075, 4 p.Article

Strategies for evaluating field-placement programsWARE, M. E; MILLARD, R. J; MATTHEWS, J. R et al.Psychological reports. 1984, Vol 55, Num 2, pp 571-578, issn 0033-2941Article

Binding energies of positive and negative trions: From quantum wells to quantum dotsBRACKER, A. S; STINAFF, E. A; RIVA, C et al.Physical review B. Condensed matter and materials physics. 2006, Vol 72, Num 3, pp 035332.1-035332.6, issn 1098-0121Article

Theory of spin states in coupled quantum dotsPONOMAREV, I. V; SCHEIBNER, M; STINAFF, E. A et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 15, pp 3869-3873, issn 0370-1972, 5 p.Conference Paper

Polarized fine structure in the photoluminescence excitation spectrum of a negatively charged quantum dotWARE, M. E; STINAFF, E. A; GAMMON, D et al.Physical review letters. 2005, Vol 95, Num 17, pp 177403.1-177403.4, issn 0031-9007Article

Suppression of Dyakonov-Perel spin relaxation in high-mobility n-GaAsDZHIOEV, R. I; KAVOKIN, K. V; KORENEV, V. L et al.Physical review letters. 2004, Vol 93, Num 21, pp 216402.1-216402.4, issn 0031-9007Article

Mechanism of strain-influenced quantum well thickness reduction in GaN/AIN short-period superlatticesKUCHUK, A. V; KLADKO, V. P; PETRENKO, T. L et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 24, issn 0957-4484, 245602.1-245602.8Article

Effects of spatial confinement and layer disorder in photoluminescence of GaAs1―xBix/GaAs heterostructuresMAZUR, Yu I; DOROGAN, V. G; SALAMO, G. J et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 6, issn 0022-3727, 065306.1-065306.8Article

Spin interactions in InAs quantum dots and moleculesDOTY, M. F; WARE, M. E; STINAFF, E. A et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 15, pp 3859-3863, issn 0370-1972, 5 p.Conference Paper

Optical pumping of the electronic and nuclear spin of single charge-tunable quantum dotsBRACKET, A. S; STINAFF, E. A; MERKULOV, I. A et al.Physical review letters. 2005, Vol 94, Num 4, pp 047402.1-047402.4, issn 0031-9007Article

Teaching psychology in high school : the Nebraska experienceWARE, M. E; JOHNS, R. L.Psychological reports. 1990, Vol 67, Num 3, pp 984-986, issn 0033-2941, 3 p., p.1Article

The role of name desirability in Person perceptionLEAK, G. K; WARE, M. E.The Journal of psychology. 1989, Vol 123, Num 1, pp 43-49, issn 0022-3980Article

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