The 15th International Conference on Molecular Beam Epitaxy (MBE-XV)WASILEWSKI, Z. R; BERESFORD, R.Journal of crystal growth. 2009, Vol 311, Num 7, issn 0022-0248, 639 p.Conference Proceedings

Nitride-based laser diodes by plasma-assisted MBE-From violet to green emissionSKIERBISZEWSKI, C; WASILEWSKI, Z. R; GRZEGORY, I et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1632-1639, issn 0022-0248, 8 p.Conference Paper

Effective mass in the barriers of GaAs/AlAs resonant tunneling double barrier diodesLANDHEER, D; AERS, G. C; WASILEWSKI, Z. R et al.Superlattices and microstructures. 1992, Vol 11, Num 1, pp 55-59, issn 0749-6036Article

Optical phonons in Al_xGa_1-xAs: Raman spectroscopyLOCKWOOD, D. J; WASILEWSKI, Z. R.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 15, pp 155202.1-155202.9, issn 1098-0121Article

Resonance Raman spectroscopy of Ga_1-xAl_xAs mediated via compositional variationLOCKWOOD, D. J; WASILEWSKI, Z. R.Solid state communications. 2003, Vol 126, Num 5, pp 261-264, issn 0038-1098, 4 p.Article

Experimental study of intersubband infrared transitions in coupled quantum wells under an electric fieldLIU, H. C; BUCHANAN, M; WASILEWSKI, Z. R et al.Journal of applied physics. 1990, Vol 68, Num 7, pp 3780-3782, issn 0021-8979, 3 p.Article

Molecular beam epitaxy in a high-volume GaAs fabROGERS, T. J.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1671-1675, issn 0022-0248, 5 p.Conference Paper

Improved growth uniformity in molecular-beam epitaxy : alternative strategiesAERS, G. C; WASILEWSKI, Z. R.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 815-818, issn 0734-211XConference Paper

Measurements of intersubband photocurrents from quantum wells in asymmetrical-double-barrier structuresLIU, H. C; BUCHANAN, M; WASILEWSKI, Z. R et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 3, pp 1411-1414, issn 0163-1829Article

The growth of high electron mobility InAsSb for application to high electron-mobility transistorsLIAO, Chichih; CHENG, K. Y.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1976-1978, issn 0022-0248, 3 p.Conference Paper

Research advances on III-V MOSFET electronics beyond Si CMOSKWO, J; HONG, M.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1944-1949, issn 0022-0248, 6 p.Conference Paper

Theoretical and experimental molecular beam angular distribution studies for gas injection in ultra-high vacuumISNARD, L; ARES, R.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1640-1645, issn 0022-0248, 6 p.Conference Paper

Integrated quantum well intersub-band photodetector and light emitting diodeLIU, H. C; LI, J; WASILEWSKI, Z. R et al.Electronics Letters. 1995, Vol 31, Num 10, pp 832-833, issn 0013-5194Article

High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxyMOZUME, T; GOZU, S.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1707-1710, issn 0022-0248, 4 p.Conference Paper

Real time extraction of quantum dot size from RHEED intensity profilesRAJAPAKSHA, C; FREUNDLICH, A.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1758-1760, issn 0022-0248, 3 p.Conference Paper

Experimental and theoretical electroabsorption in an InGaAs-GaAs strained-layer superlattice, and the performance of a wave-guide modulatorHUNT, N. E. J; JESSOP, P. E; WASILEWSKI, Z. R et al.Canadian journal of physics (Print). 1991, Vol 69, Num 3-4, pp 483-490, issn 0008-4204, 8 p.Conference Paper

In situ X-ray diffraction during stacking of InAs/GaAs(0 01) quantum dot layers and photoluminescence spectroscopyTAKAHASI, M; KAIZU, T.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1761-1763, issn 0022-0248, 3 p.Conference Paper

The Kondo effect observed up to T_K∼80K in self-assembled InAs quantum dots laterally coupled to nanogap electrodesSHIBATA, K; HIRAKAWA, K.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1795-1798, issn 0022-0248, 4 p.Conference Paper

Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectorsLIU, H. C; WASILEWSKI, Z. R; BUCHANAN, M et al.Applied physics letters. 1993, Vol 63, Num 6, pp 761-763, issn 0003-6951Article

Charge non-neutrality in the quantum well region of a GaAs-AlGaAs intersubband 9 μm detectorLIU, H. C; BUCHANAN, M; WASILEWSKI, Z. R et al.Applied physics letters. 1991, Vol 58, Num 10, pp 1059-1061, issn 0003-6951Article

Epitaxial films for Ge-Sb-Te phase change memorySHAYDUK, R; BRAUN, W.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2215-2219, issn 0022-0248, 5 p.Conference Paper

Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dotsATKINSON, P; SCHMIDT, O. G.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1815-1818, issn 0022-0248, 4 p.Conference Paper

High-frequency quantum-well infrared photodetectors measured by microwave-rectification techniqueLIU, H. C; LI, J; BUCHANAN, M et al.IEEE journal of quantum electronics. 1996, Vol 32, Num 6, pp 1024-1028, issn 0018-9197Article

Gallium beam analysis and implications for the growth of ultra-high-mobility GaAs/AlGaAs heterostructuresSCHMULT, Stefan; TAYLOR, Samuel; DIETSCHE, Werner et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1655-1657, issn 0022-0248, 3 p.Conference Paper

Growth of InGaAs/GaNAs strain-compensated quantum dot superlattice on GaAs (311 )B by molecular beam epitaxyOSHIMA, Ryuji; SHOJI, Yasushi; TAKATA, Ayami et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1770-1773, issn 0022-0248, 4 p.Conference Paper