Sources of donor impurities in undoped GaAs grown using arsine and trimethylgalliumWATKINS, S. P; HAACKE, G.Journal of applied physics. 1991, Vol 69, Num 3, pp 1625-1630, issn 0021-8979, 6 p.Article

Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition : arsine versus tertiarybutylarsineWATKINS, S. P; HAACKE, G.Applied physics letters. 1991, Vol 59, Num 18, pp 2263-2265, issn 0003-6951Article

Control of GaAs nanowire morphology by group III precursor chemistrySALEHZADEH, O; WATKINS, S. P.Journal of crystal growth. 2011, Vol 325, Num 1, pp 5-9, issn 0022-0248, 5 p.Article

Optical and electrical characterization of OMVPE-grown AlGaAsSb epitaxial layers on InP substratesRAO, T. S; SO, M. G; JIANG, W. Y et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 532-535, issn 0022-0248, 4 p.Conference Paper

Far-infrared absorption and near-infrared excitation spectroscopy of isoelectronic bound excitons in Si:Be+CLABRIE, D; BOOTH, I. J; WATKINS, S. P et al.Solid state communications. 1987, Vol 63, Num 2, pp 115-118, issn 0038-1098Article

Lithium and lithium-carbon isoelectronic complexes in silicon: luminescence-decay-time, absorption, isotope-splitting, and Zeeman measurementsLIGHTOWLERS, E. C; CANHAM, L. T; DAVIES, G et al.Physical review. B, Condensed matter. 1984, Vol 29, Num 8, pp 4517-4523, issn 0163-1829Article

Complex photoluminescence decay characteristics of the In-related isoelectronic bound exciton in SiWATKINS, S. P; THEWALT, M. L. W; STEINER, T et al.Solid state communications. 1983, Vol 46, Num 6, pp 447-450, issn 0038-1098Article

Flow modulation epitaxy of ZnO films on sapphire substratesHE HUANG; JIANG, W. Y; WATKINS, S. P et al.Journal of crystal growth. 2008, Vol 310, Num 18, pp 4050-4053, issn 0022-0248, 4 p.Article

Growth of InAsSb/InPSb heterojunctions for mid-IR detector applicationsPITTS, O. J; LACKNER, D; CHERNG, Y. T et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 4858-4861, issn 0022-0248, 4 p.Conference Paper

Microstructure of ordered nanodomains induced by Bi surfactant in OMVPE-grown GaAsSbJIANG, W. Y; LIU, J. Q; ZHANG, X et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 541-544, issn 0022-0248, 4 p.Conference Paper

Structural effects of carbon in GaSb grown by metalorganic vapor phase epitaxyWATKINS, S. P; WIERSMA, R. D; WANG, C. X et al.Journal of crystal growth. 2003, Vol 248, pp 274-278, issn 0022-0248, 5 p.Conference Paper

InP/GaAsSb/InP double heterojunction bipolar transistorsBOLOGNESI, C. R; DVORAK, M. W; WATKINS, S. P et al.IEEE Lester Eastman conference on high performance devices. 2002, pp 343-351, isbn 0-7803-7478-9, 9 p.Conference Paper

Infrared single wavelength gas composition monitoring for metalorganic vapour-phase epitaxyWATKINS, S. P; PINNINGTON, T; HU, J et al.Journal of crystal growth. 2000, Vol 221, pp 166-171, issn 0022-0248Conference Paper

15-nm base type-II InP/GaAsSb/InP DHBTs with F_T = 384 GHz and a 6-V BV_CEOLIU, H. G; WATKINS, S. P; BOLOGNESI, C. R et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 3, pp 559-561, issn 0018-9383, 3 p.Article

Extraction of the average collector velocity in high-speed type-II InP-GaAsSb-InP DHBTsLIU, H. G; TAO, N; WATKINS, S. P et al.IEEE electron device letters. 2004, Vol 25, Num 12, pp 769-771, issn 0741-3106, 3 p.Article

Antimony segregation in GaAs-based multiple quantum well structuresPITTS, O. J; WATKINS, S. P; WANG, C. X et al.Journal of crystal growth. 2003, Vol 254, Num 1-2, pp 28-34, issn 0022-0248, 7 p.Article

Comparison of single- and double-barrier pseudomorphic InGaP/InGaAs HFETsXU, X. G; MCLAUGHLIN, S; HU, J et al.Journal of crystal growth. 1998, Vol 195, Num 1-4, pp 687-693, issn 0022-0248Conference Paper

Control of residual impurity incorporation in tertiarybutylarsine-grown GaAsHAACKE, G; WATKINS, S. P; BURKHARD, H et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 342-347, issn 0022-0248Conference Paper

Photoluminescence identification of residual donors in undoped GaAs grown by metalorganic chemical vapor depositionWATKINS, S. P; HAACKE, G; BURKHARD, H et al.Applied physics letters. 1988, Vol 52, Num 5, pp 401-403, issn 0003-6951Article

Uniaxial stress and magnetic field dependence of the In- and Tl-related isoelectronic bound excitons in SiWATKINS, S. P; THEWALT, M. L. W.Canadian journal of physics (Print). 1985, Vol 63, Num 8, pp 1074-1082, issn 0008-4204Article

Effect of group-III donors on high-resolution photoluminescence and morphology of ZnO nanowires grown by metalorganic vapour phase epitaxySENTHIL KUMAR, E; ANDERSON, I. P; DENG, Z et al.Semiconductor science and technology. 2013, Vol 28, Num 4, issn 0268-1242, 045014.1-045014.7Article

Effect of annealing on the structural and optical properties of heavily carbon-doped ZnOHE HUANG; DENG, Z. W; LI, D. C et al.Semiconductor science and technology. 2010, Vol 25, Num 4, issn 0268-1242, 045023.1-045023.5Article

Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applicationsLACKNER, D; PITTS, O. J; BOLOGNESI, C. R et al.Journal of crystal growth. 2009, Vol 311, Num 14, pp 3563-3567, issn 0022-0248, 5 p.Article

In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs (0 01)OWEN, D. L; LACKNER, D; PITTS, O. J et al.Semiconductor science and technology. 2009, Vol 24, Num 3, issn 0268-1242, 035011.1-035011.5Article

Time-resolved reflectance difference spectroscopy study of Sb- and As-terminated InP(1 0 0) surfacesWANG, C. X; PITTS, O. J; WATKINS, S. P et al.Journal of crystal growth. 2003, Vol 248, pp 259-264, issn 0022-0248, 6 p.Conference Paper